SLVSC31D December   2013  – August 2015 TPS7A4501-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics (5962-1222402VHA and 5962-1222402V9A)
    6. 7.6 Electrical Characteristics (5962R1222403VXC and 5962R1222403V9A)
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Adjustable Operation
      2. 8.3.2 Fixed Operation
      3. 8.3.3 Overload Recovery
      4. 8.3.4 Output Voltage Noise
      5. 8.3.5 Protection Features
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Capacitance and Transient Response
        2. 9.2.2.2 Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Calculating Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Pin Configuration and Functions

U Package
10-Pin CFP
Top View
TPS7A4501-SP po_u_slvsc31.gif
HKU Package
10-Pin CFP
Top View
TPS7A4501-SP po_vias_slvsc31.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
SHDN 1 I Shutdown. SHDN is used to put the TPS7A4501 regulator into a low-power shutdown state. The output is off when SHDN is pulled low. SHDN can be driven by 5-V logic, 3-V logic, or open-collector logic with a pullup resistor. The pullup resistor is required to supply the pullup current of the open-collector gate, normally several microamperes, and SHDN current, typically 3 μA. If unused, the user must connect SHDN to VIN. The device is in the low-power shutdown state if SHDN is not connected.
IN 2 I Input. Power is supplied to the device through IN. A bypass capacitor is required on this pin if the device is more than six inches away from the main input filter capacitor. In general, the output impedance of a battery rises with frequency, so it is advisable to include a bypass capacitor in battery-powered circuits. A bypass capacitor (ceramic) in the range of 1 to 10 μF is sufficient. The TPS7A4501 regulator is designed to withstand reverse voltages on IN with respect to ground and on OUT. In the case of a reverse input, which can happen if a battery is plugged in backwards, the device functions as if there is a diode in series with its input. No reverse current flows into the regulator, and no reverse voltage appears at the load. The device protects both itself and the load.
3
4
NC 5 NC This pin is not connected to any internal circuitry. It can be left floating or tied to VIN or GND.
OUT 6 O Output. The output supplies power to the load. To prevent oscillations, use a minimum output capacitor (ceramic) of 10 μF. Applications with large transient loads to limit peak voltage transients require larger output capacitors.
7
8
ADJ 9 I Adjust. This is the input to the error amplifier. ADJ is internally clamped to ±7 V. It has a bias current of 3 μA that flows into the pin. ADJ voltage is 1.21 V referenced to ground, and the output voltage range is 1.21 to 20 V.
GND 10 — Ground
Thermal Vias(1) — — The exposed thermal vias of the HKU package should be connected to a wide ground plane for effective heat dissipation. Refer to Figure 30 and Figure 31 for the typical footprint of the HKU package.
(1) For HKU package

Bare Die Information

DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD
METALLIZATION COMPOSITION		 BOND PAD THICKNESS
15 mils Silicon with backgrind Floating TiW/AlCu2 1627 nm
TPS7A4501-SP die_lvsbg4.gif

Bond Pad Coordinates in Microns(1)

DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX
SHDN 1 1729.25 55.5 1879.25 205.5
IN 2 1037.25 875 1187.25 1025
IN 3 1460.75 1255.5 1610.75 1405.5
IN 4 1037.75 1384.5 1187.75 1534.5
OUT 5 774.25 1634.75 924.25 1784.75
OUT 6 675.25 1166 825.25 1316
OUT 7 345.5 1299.25 495.5 1449.25
SENSE/ADJ 8 55.5 213 205.5 363
GND 9 244 17.5 394 167.5
(1) Substrate is not to be connected.