TPS65296 4.5-V to 18-V VIN complete LPDDR4 and LPDDR4X memory power solution | 德州仪器 TI.com.cn

TPS65296
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4.5-V to 18-V VIN complete LPDDR4 and LPDDR4X memory power solution

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描述

The TPS65296 device provides a complete power solution for LPDDR4/LPDDR4X memory system with the lowest total cost and minimum space. It meets the JEDEC standard for LPDDR4/LPDDR4X power-up and power-down sequence requirement. The TPS65296 integrates two synchronous buck converters (VDD1 and VDD2) and a 1.5-A LDO (VDDQ).

The TPS65296 employs D-CAP3™ mode with 600-kHz switching frequency for fast transient, good load/line regulation, and support for ceramic output capacitors without an external compensation circuit.

The TPS65296 provides rich functions as well as good efficiency with internal low Rdson power MOSFETs. It supports flexible power state control, placing VDDQ at high-Z in S3 and discharging VDD1, VDD2, and VDDQ in S4/S5 state. Full protection features include OVP, UVP, OCP, UVLO and thermal shutdown protection. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

特性

  • Synchronous buck converter (VDD2)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.1 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ / 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • Synchronous buck converter (VDD1)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 1.8 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ /120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV/UV protections
  • 1.5-A LDO (VDDQ)
    • 1.5-A continual output current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-Z in S3
    • ±30-mV VDDQ output accuracy (DC+AC)
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

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参数

与其它产品相比 DDR内存 邮件 下载到电子表格中
Part number 立即下单 DDR memory type Control mode Iout VDDQ (Max) (A) Iout VTT (Max) (A) Output Vin (Min) (V) Vin (Max) (V) Features Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG)
TPS65296 立即下单 LPDDR4
LPDDR4X    
  8     1.5     VDDQ
VREF
VTT    
4.5     18     Complete Solution
Eco Mode
S3/S5 Support    
Catalog     -40 to 125     VQFN-HR | 18     18VQFN-HR: 9 mm2: 3 x 3 (VQFN-HR | 18)    
TPS65295 立即下单 DDR4     D-CAP3     8     1     VDDQ
VREF
VTT    
4.5     18     Complete Solution     Catalog     -40 to 125     VQFN-HR | 18     18VQFN-HR: 9 mm2: 3 x 3 (VQFN-HR | 18)