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TPS53632G

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用于 48V GaN 直流/直流转换器的半桥 D-CAP+ 控制器

产品详情

Topology Half bridge Control mode Current Duty cycle (max) (%) 50 Switching frequency (max) (kHz) 2000 Features Light-load efficiency UVLO thresholds on/off (V) 2.8/2.6 Operating temperature range (°C) -10 to 105 Rating Catalog Vin (max) (V) 3.6
Topology Half bridge Control mode Current Duty cycle (max) (%) 50 Switching frequency (max) (kHz) 2000 Features Light-load efficiency UVLO thresholds on/off (V) 2.8/2.6 Operating temperature range (°C) -10 to 105 Rating Catalog Vin (max) (V) 3.6
VQFN (RSM) 32 16 mm² 4 x 4
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package
  • Valley Current Mode with Constant ON Time Control
  • Lossless Current Sensing Scheme
  • I2C Interface for VID Control and Telemetry
  • Programmable I2C Addresses up to Eight Devices
  • Switching Frequency up to 1 MHz
  • Digital Current Monitor
  • 7-Bit, DAC Output Range: 0.50-V to 1.52-V with 10-mV Step
  • Accurate, Adjustable Voltage Positioning or Zero Slope Load-Line
  • Selectable, 8-Level Current Limit
  • Adjustable Output Slew Rate Control
  • Default Boot Voltage: 1.00 V
  • Small, 4-mm × 4-mm, 32-Pin, VQFN, PowerPAD Package

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

The TPS53632G device is a half-bridge PWM controller with D-CAP+ architecture that provides fast transient response, lowest outputcapacitance and high efficiency in single stage conversion directly from 48-V bus. The TPS53632G device supports the standard I2C Rev 3.0 interface for dynamic controlof the output voltage and current monitor telemetry. Paired with TI GaN power stages and drivers,the TPS53632G can switch up to 1 MHz to minimize magnetic component size and reduce overall boardspace. The LMG5200 GaN power stage is designed specifically for this controller to achieve highfrequency and efficiency as high as 92% with 48-V to 1-V conversion.

Other features include adjustable control of output slew rate and voltage positioning. Inaddition, the TPS53632G device can be used along with other TI discrete power MOSFETs and driversfor silicon-based half bridge solutions. The TPS53632G device is packaged in a space saving,thermally enhanced, 32-pin VQFN package and is rated to operate at a range between –10°C and105°C.

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技术文档

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类型 标题 下载最新的英语版本 日期
* 数据表 TPS53632G D-CAP+™ Half-Bridge PWM Controller Optimized for GaN-based 48-V DC/DC Converter with I2C Interface 数据表 (Rev. A) PDF | HTML 2016年 6月 10日
EVM 用户指南 Using the LMG5200POLEVM-10A GaN 48V-1V Point-of-Load EVM (Rev. B) 2017年 8月 2日
技术文章 Enabling 48V-to-POL single-stage conversion with GaN PDF | HTML 2016年 7月 5日
技术文章 Highlights from APEC 2016 – GaN, 48V POL, wireless charging and more! PDF | HTML 2016年 3月 28日

设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

评估板

LMG5200POLEVM-10 — LMG5200 GaN 48V 至 1V 负载点评估模块

LMG5200POLEVM-10 EVM 旨在评估 48V 至 1V 应用中的 LMG5200 GaN 功率级和 TPS53632G 半桥负载点控制器。该 EVM 将 48V-1V 转换器作为具有电流加倍器整流器的单级硬开关半桥加以实现。EVM 支持 36 至 75 伏的输入电压和高达 50A 的输出电流。该拓扑有效支持高降压比,同时提供高输出电流和可控性。

用户指南: PDF
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物料清单 (BOM)

PMP4497 BOM

TIDRNB1.PDF (67 KB)
原理图

PMP4497 Schematic

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参考设计

PMP22089 — 配备 GaN 技术的半桥点负载转换器参考设计

此参考设计将板载变压器的匝数比从 5:1 修改为 3:1,以降低输入范围。该电路板支持 24V 至 32V 的输入电压、0.5V 至 1.0V 的输出电压和高达 40A 的输出电流。该拓扑有效支持高降压比,同时提供高输出电流和可控性。原 EVM 设计用于评估 LMG5200 GaN 半桥功率级和 TPS53632G 半桥负载点 (PoL) 控制器。该电路板通过倍流整流器将转换器作为单级硬开关半桥使用。该电路板是 LMG5200POLEVM-10 评估模块的重新设计版本。
测试报告: PDF
原理图: PDF
参考设计

PMP4497 — LMG5200 48V 至 1V/40A 单级转换器参考设计

PMP4497 是一款基于 GaN 的参考设计解决方案,适用于 FPGA、ASIC 等 Vcore 应用。凭借高度集成和低开关损耗,GaN 模块 LMG5200 可实现高效率单级 48V 至 1.0V 解决方案,从而取代传统的两级解决方案。此参考设计展示了与两级解决方案相比,此解决方案具有的 GaN 性能和系统优势。低成本 ER18 平面 PCB 变压器嵌于板上。此参考设计尺寸紧凑 (45mm*26mm*11mm)。还可通过优化频率和组件进一步减小尺寸。
测试报告: PDF
原理图: PDF
封装 引脚 下载
VQFN (RSM) 32 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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