TPS1100

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单路 P 通道增强-模式 MOSFET

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TPS25221 正在供货 高电平有效且具有反向阻断功能的 0.275-2.7A 可调节ILIMIT、2.5-5.5V、70mΩ USB 电源开关 This product is a single channel adjustable current limit switch.

产品详情

Operating temperature range (°C) to Rating Catalog
Operating temperature range (°C) to Rating Catalog
SOIC (D) 8 29.4 mm² 4.9 x 6 TSSOP (PW) 8 19.2 mm² 3 x 6.4
  • Low rDS(on) . . . 0.18 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated

  • Low rDS(on) . . . 0.18 Typ at VGS = -10 V
  • 3 V Compatible
  • Requires No External VCC
  • TTL and CMOS Compatible Inputs
  • VGS(th) = -1.5 V Max
  • Available in Ultrathin TSSOP Package (PW)
  • ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015

LinBICMOS is a trademark of Texas Instruments Incorporated

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.

Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.

Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.

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类型 标题 下载最新的英语版本 日期
* 数据表 Single P-Channel Enhancement-Mode MOSFETs 数据表 (Rev. C) 1995年 8月 1日

设计和开发

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计算工具

NONSYNC-BOOST-FET-LOSS-CALC — Power Loss Calculation Tool for Non-Synchronous Boost Converter

MOSFET power loss calculator for non-synchronous boost converter
计算工具

SYNC-BUCK-FET-LOSS-CALC — 适用于同步降压转换器应用的 MOSFET 功率损耗计算器

快速权衡大小、成本和性能,根据应用条件选择合适的 MOSFET。
封装 引脚 下载
SOIC (D) 8 查看选项
TSSOP (PW) 8 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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