The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments silicon-gate LinCMOSTM technology to facilitate low-power, low-voltage operation and excellent offset-voltage stability. LinCMOSTM technology also enables extremely high input impedance and low bias currents allowing direct interface to high-impedance sources.
The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of different supply currents and therefore different levels of ac performance. The supply current can be set at
17 uA, 250 uA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/us (at 3 V).
The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined with low power consumption makes this device a good choice for remote, inaccessible, or portable battery-powered applications. The common-mode input range includes the negative rail.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2341IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).
LinCMOS is a trademark of Texas Instruments Incorporated.
|Part number||立即下单||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
In to V-
|9||0.7||25||Catalog||-40 to 85||
PDIP | 8
SOIC | 8
TSSOP | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)