The TLV233x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. Unlike the TLV2322 which is optimized for ultra-low power, the TLV233x is designed to provide a combination of low power and good ac performance. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input-voltage range includes the negative rail and extends to within 1 V of the positive rail.
Having a maximum supply current of only 310 uA per amplifier over full temperature range, the TLV233x devices offer a combination of good ac performance and microampere supply currents. From a 3-V power supply, the amplifier's typical slew rate is 0.38 V/us and its bandwidth is 300 kHz.
These amplifiers offer a level of ac performance greater than that of many other devices operating at comparable power levels. The TLV233x operational amplifiers are especially well suited for use in low-current or battery-powered applications.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOSTM technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.
To facilitate the design of small portable equipment, the TLV233x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline package (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV233x incorporates internal ESD-protection circuits that prevents functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.
LinCMOS is a trademark of Texas Instruments Incorporated.
|Part number||立即下单||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
In to V-
|9||0.105||32||Catalog||-40 to 85||
PDIP | 8
SOIC | 8
TSSOP | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
8TSSOP: 19 mm2: 6.4 x 3 (TSSOP | 8)