The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have wider supply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited for interfacing with high-impedance sensors or very low level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input-voltage limits and output voltage swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.
The TLE208x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.
For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response as the TLE208x with more stringent dc and noise specifications.
LinCMOS is a trademark of Texas Instruments.
|Part number||立即下单||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
||2||4.5||38||10||40||In to V+||3||1.45||12||Catalog||
-40 to 85
0 to 70
PDIP | 8
SOIC | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)