The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process yields a typical noise floor of 11.6 nV/√Hz, 17-nV/√Hz ensured maximum, offering immediate improvement in noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing the dynamic signal range for BiFET circuits to ±19 V. On-chip zener trimming of offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower performance BiFET operational amplifiers for ease in improving performance in existing designs.
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption.
The TLE207x family of BiFET amplifiers are Texas Instruments highest performance BiFETs, with tighter input offset voltage and ensured maximum noise specifications. Designers requiring less stringent specifications but seeking the improved ac characteristics of the TLE207x should consider the TLE208x operational amplifier family.
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single supplies.
The TLE207x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems, Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended. When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth requirements and output loading.
|Part number||立即下单||Number of channels (#)||Total supply voltage (Min) (+5V=5, +/-5V=10)||Total supply voltage (Max) (+5V=5, +/-5V=10)||GBW (Typ) (MHz)||Slew rate (Typ) (V/us)||Rail-to-rail||Vos (offset voltage @ 25 C) (Max) (mV)||Iq per channel (Typ) (mA)||Vn at 1 kHz (Typ) (nV/rtHz)||Rating||Operating temperature range (C)||Package Group||Package size: mm2:W x L (PKG)||Offset drift (Typ) (uV/C)||Features||Input bias current (Max) (pA)||CMRR (Typ) (dB)||Output current (Typ) (mA)||Architecture|
||2||4.5||38||10||40||In to V+||3.5||1.55||12||Automotive||-40 to 125||SOIC | 8||8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)||2.4||175||98||30||FET|
|TLE2071A||无样片||1||4.5||38||10||40||In to V+||2||1.7||12||Catalog||
-40 to 85
0 to 70
PDIP | 8
SOIC | 8
8PDIP: 93 mm2: 9.43 x 9.81 (PDIP | 8)
8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)
|TLE2071A-Q1||无样片||1||4.5||38||10||40||In to V+||2||1.7||12||Automotive||-40 to 125||SOIC | 8||8SOIC: 19 mm2: 3.91 x 4.9 (SOIC | 8)||3.2||175||98||30||FET|
|TLE2071AM||无样片||1||4.5||38||10||40||In to V+||2||1.7||12||Military||-55 to 125||
CDIP | 8
CFP | 10
LCCC | 20
8CDIP: 64 mm2: 6.67 x 9.6 (CDIP | 8)
10CFP: 40 mm2: 6.35 x 6.35 (CFP | 10)
20LCCC: 79 mm2: 8.89 x 8.89 (LCCC | 20)