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模拟开关和多路复用器

SN74CBT16212C

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具有 –2V 下冲保护的 5V、交叉点/交换、24 通道 FET 总线开关

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数据表

SN74CBT16212C

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产品详情

Configuration Crosspoint/exchange Number of channels 24 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 19 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration Crosspoint/exchange Number of channels 24 Power supply voltage - single (V) 5 Protocols Analog Ron (typ) (Ω) 3 CON (typ) (pF) 19 Bandwidth (MHz) 200 Operating temperature range (°C) -40 to 85 Features Powered-off protection, Undershoot protection Input/output continuous current (max) (mA) 128 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
SSOP (DL) 56 190.647 mm² 18.42 x 10.35 TSSOP (DGG) 56 113.4 mm² 14 x 8.1 TVSOP (DGV) 56 72.32 mm² 11.3 x 6.4
  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 8 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 5 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.
  • Member of the Texas Instruments Widebus™ Family
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 8 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 5 µA Max)
  • VCC Operating Range From 4 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

Widebus is a trademark of Texas Instruments.

The SN74CBT16212C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16212C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT16212C operates as a 24-bit bus switch, or as a 12-bit bus-exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is disabled, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.

The SN74CBT16212C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT16212C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT16212C operates as a 24-bit bus switch, or as a 12-bit bus-exchange that provides data exchanging between four signal ports. The select (S0, S1, S2) inputs control the data path of the bus-exchange switch. When the bus-exchange switch is ON, the A port is connected to the B port, allowing bidirectional data flow between ports. When the bus-exchange switch is disabled, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, each select input should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
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类型 标题 下载最新的英语版本 日期
* 数据表 SN74CBT16212C 数据表 (Rev. A) 2004年 1月 8日
应用手册 选择正确的德州仪器 (TI) 信号开关 (Rev. E) PDF | HTML 英语版 (Rev.E) PDF | HTML 2022年 8月 5日
应用手册 CBT-C、CB3T 和 CB3Q 信号开关系列 (Rev. C) PDF | HTML 英语版 (Rev.C) PDF | HTML 2022年 3月 11日
应用手册 多路复用器和信号开关词汇表 (Rev. B) 英语版 (Rev.B) PDF | HTML 2022年 3月 11日
应用简报 利用关断保护信号开关消除电源时序 (Rev. C) 英语版 (Rev.C) PDF | HTML 2021年 10月 21日
选择指南 Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 小尺寸逻辑器件指南 (Rev. E) 最新英语版本 (Rev.G) 2012年 7月 16日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
更多文献资料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用户指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
应用手册 Bus FET Switch Solutions for Live Insertion Applications 2003年 2月 7日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

仿真模型

SN74CBT16212C IBIS Model

SCDM056.ZIP (27 KB) - IBIS Model
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参考设计

TIDEP-01017 — TIDEP-01017

此参考设计为级联成像雷达系统奠定了处理基础。级联雷达设备可支持前端远距离 (LRR) 波束形成应用以及角级联和侧级联雷达和传感器融合系统。此参考设计为有资质的开发人员提供了设计材料，供开发人员创建用于开发和测试 ADAS 应用的有效软件评估平台。该设计将有助于缩短基础平台的开发时间，并为多个汽车雷达前端和天线子系统提供支持。

级联开发套件具有两个主要用例：

  1. 要使用 MMWCAS-DSP-EVM 作为捕获卡，并通过 mmWave Studio 工具完整评估 AWR2243 四芯片级联性能，请查看 TIDEP-01012 设计指南。
  2. 要使用 MMWCAS-DSP-EVM 开发雷达实时 SW (...)
设计指南: PDF
原理图: PDF
封装 引脚 下载
SSOP (DL) 56 查看选项
TSSOP (DGG) 56 查看选项
TVSOP (DGV) 56 查看选项
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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