SCES590E JULY   2004  – March 2018 SN74AUP1G06

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Logic Diagram
  4. 4 Revision History
  5. 5 Pin Functions and Configurations
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Switching Characteristics, CL = 5 pF
    7. 6.7  Switching Characteristics, CL = 10 pF
    8. 6.8  Switching Characteristics, CL = 15 pF
    9. 6.9  Switching Characteristics
    10. 6.10 Operating Characteristics
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 CMOS Open-Drain Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • DRL|5
  • YFP|4
  • DRY|6
散热焊盘机械数据 (封装 | 引脚)
订购信息

1 Features

  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Available in the Texas Instruments NanoStar™ Package
  • Low Static-Power Consumption
    (ICC = 0.9 µA Maximum)
  • Low Dynamic-Power Consumption
    (Cpd = 1 pF Typical at 3.3 V)
  • Low Input Capacitance (Ci = 1.5 pF Typical)
  • Low Noise – Overshoot and Undershoot <10% of VCC
  • Ioff Supports Partial Power-Down-Mode Operation
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at the Input (Vhys = 250 mV Typical at 3.3 V)
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 3.6 ns Maximum at 3.3 V
  • Suitable for Point-to-Point Applications