主页 逻辑和电压转换 专用逻辑 IC
主页
逻辑和电压转换
专用逻辑 IC

SN74ALVC7806

正在供货

256 x 18 3.3V 异步 FIFO 存储器

立即订购
数据表

SN74ALVC7806

正在供货
数据表 立即订购

产品详情

Technology family ALVC Rating Military Operating temperature range (°C) 0 to 70
Technology family ALVC Rating Military Operating temperature range (°C) 0 to 70
SSOP (DL) 56 190.647 mm² 18.42 x 10.35
  • Member of the Texas Instruments WidebusTM Family
  • Low-Power Advanced CMOS Technology
  • Operates From 3-V to 3.6-V VCC
  • Load Clock and Unload Clock Can Be Asynchronous or Coincident
  • Full, Empty, and Half-Full Flags
  • Programmable Almost-Full/Almost-Empty Flag
  • Fast Access Times of 18 ns With a 50-pF Load and All Data Outputs Switching Simultaneously
  • Data Rates up to 40 MHz
  • 3-State Outputs
  • Pin-to-Pin Compatible With SN74ACT7804, SN74ACT7806, and SN74ACT7814
  • Packaged in Shrink Small-Outline 300-mil Package Using 25-mil Center-to-Center Spacing

    Widebus is a trademark of Texas Instruments Incorporated.
  • Member of the Texas Instruments WidebusTM Family
  • Low-Power Advanced CMOS Technology
  • Operates From 3-V to 3.6-V VCC
  • Load Clock and Unload Clock Can Be Asynchronous or Coincident
  • Full, Empty, and Half-Full Flags
  • Programmable Almost-Full/Almost-Empty Flag
  • Fast Access Times of 18 ns With a 50-pF Load and All Data Outputs Switching Simultaneously
  • Data Rates up to 40 MHz
  • 3-State Outputs
  • Pin-to-Pin Compatible With SN74ACT7804, SN74ACT7806, and SN74ACT7814
  • Packaged in Shrink Small-Outline 300-mil Package Using 25-mil Center-to-Center Spacing

    Widebus is a trademark of Texas Instruments Incorporated.

A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ALVC7806 is an 18-bit FIFO with high speed and fast access times. Data is processed at rates up to 40 MHz with access times of 18 ns in a bit-parallel format. These memories are designed for 3-V to 3.6-V VCC operation.

Data is written into memory on a low-to-high transition of the load clock (LDCK) and is read out on a low-to-high transition of the unload clock

(UNCK). The memory is full when the number of words clocked in exceeds the number of words clocked out by 256. When the memory is full, LDCK has no effect on the data residing in memory. When the memory is empty, UNCK has no effect.

Status of the FIFO memory is monitored by the full (FULL\), empty (EMPTY\), half-full (HF), and almost- full/almost-empty (AF/AE) flags. The FULL\ output is low when the memory is full and high when the memory is not full. The EMPTY\ output is low when the memory is empty and high when it is not empty. The HF output is high whenever the FIFO contains 128 or more words and low when it contains 127 or fewer words. The AF/AE status flag is a programmable flag. The first one or two low-to-high transitions of LDCK after reset are used to program the almost-empty offset value (X) and the almost-full offset value (Y) if program enable (PEN\) is low. The AF/AE flag is high when the FIFO contains X or fewer words or (256 - Y) or more words. The AF/AE flag is low when the FIFO contains between (X + 1) and (255 - Y) words.

A low level on the reset (RESET\) resets the internal stack pointers and sets FULL\ high, AF/AE high, HF low, and EMPTY\ low. The Q outputs are not reset to any specific logic level. The FIFO must be reset on power up. The first word loaded into empty memory causes EMPTY\ to go high and the data to appear on the Q outputs. The data outputs are in the high-impedance state when the output-enable (OE\) is high.

The SN74ALVC7806 is characterized for operation from 0°C to 70°C.

A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ALVC7806 is an 18-bit FIFO with high speed and fast access times. Data is processed at rates up to 40 MHz with access times of 18 ns in a bit-parallel format. These memories are designed for 3-V to 3.6-V VCC operation.

Data is written into memory on a low-to-high transition of the load clock (LDCK) and is read out on a low-to-high transition of the unload clock

(UNCK). The memory is full when the number of words clocked in exceeds the number of words clocked out by 256. When the memory is full, LDCK has no effect on the data residing in memory. When the memory is empty, UNCK has no effect.

Status of the FIFO memory is monitored by the full (FULL\), empty (EMPTY\), half-full (HF), and almost- full/almost-empty (AF/AE) flags. The FULL\ output is low when the memory is full and high when the memory is not full. The EMPTY\ output is low when the memory is empty and high when it is not empty. The HF output is high whenever the FIFO contains 128 or more words and low when it contains 127 or fewer words. The AF/AE status flag is a programmable flag. The first one or two low-to-high transitions of LDCK after reset are used to program the almost-empty offset value (X) and the almost-full offset value (Y) if program enable (PEN\) is low. The AF/AE flag is high when the FIFO contains X or fewer words or (256 - Y) or more words. The AF/AE flag is low when the FIFO contains between (X + 1) and (255 - Y) words.

A low level on the reset (RESET\) resets the internal stack pointers and sets FULL\ high, AF/AE high, HF low, and EMPTY\ low. The Q outputs are not reset to any specific logic level. The FIFO must be reset on power up. The first word loaded into empty memory causes EMPTY\ to go high and the data to appear on the Q outputs. The data outputs are in the high-impedance state when the output-enable (OE\) is high.

The SN74ALVC7806 is characterized for operation from 0°C to 70°C.
open-in-new 查找其他 专用逻辑 IC
下载 观看带字幕的视频 视频

技术文档

star =有关此产品的 TI 精选热门文档
未找到结果。请清除搜索并重试。
查看全部 20
类型 标题 下载最新的英语版本 日期
* 数据表 256 X 18 Low-Power First-In, First-Out Memory 数据表 (Rev. A) 1998年 4月 1日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 TI IBIS File Creation, Validation, and Distribution Processes 2002年 8月 29日
用户指南 ALVC Advanced Low-Voltage CMOS Including SSTL, HSTL, And ALB (Rev. B) 2002年 8月 1日
更多文献资料 Standard Linear & Logic for PCs, Servers & Motherboards 2002年 6月 13日
应用手册 16-Bit Widebus Logic Families in 56-Ball, 0.65-mm Pitch Very Thin Fine-Pitch BGA (Rev. B) 2002年 5月 22日
应用手册 Benefits & Issues of Migrating 5-V and 3.3-V Logic to Lower-Voltage Supplies (Rev. A) 1999年 9月 8日
应用手册 TI SN74ALVC16835 Component Specification Analysis for PC100 1998年 8月 3日
应用手册 Logic Solutions for PC-100 SDRAM Registered DIMMs (Rev. A) 1998年 5月 13日
应用手册 Migration From 3.3-V To 2.5-V Power Supplies For Logic Devices 1997年 12月 1日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 CMOS Power Consumption and CPD Calculation (Rev. B) 1997年 6月 1日
应用手册 Input and Output Characteristics of Digital Integrated Circuits 1996年 10月 1日
应用手册 Live Insertion 1996年 10月 1日
应用手册 Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日
应用手册 Power-Dissipation Calculations for TI FIFO Products (Rev. A) 1996年 3月 1日

设计和开发

如需其他信息或资源，请点击以下任一标题进入详情页面查看（如有）。

封装 引脚 下载
SSOP (DL) 56 查看选项
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

支持和培训

视频