SN74ACT7806
- Member of the Texas Instruments WidebusTM Family
- Load Clock and Unload Clock Can Be Asynchronous or Coincident
- 256 Words by 18 Bits
- Low-Power Advanced CMOS Technology
- Full, Empty, and Half-Full Flags
- Programmable Almost-Full/Almost-Empty Flag
- Fast Access Times of 15 ns With a 50-pF Load and All Data Outputs Switching Simultaneously
- Data Rates up to 50 MHz
- 3-State Outputs
- Pin-to-Pin Compatible With SN74ACT7804 and SN74ACT7814
- Packaged in Shrink Small-Outline 300-mil Package Using 25-mil Center-to-Center Spacing
Widebus is a trademark of Texas Instruments Incorporated.
A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. The SN74ACT7806 is a 256-word by 18-bit FIFO for high speed and fast access times. It processes data at rates up to 50 MHz and access times of 15 ns in a bit-parallel format.
Data is written into memory on a low-to-high transition at the load clock (LDCK) input and is read out on a low-to-high transition at the unload clock (UNCK) input. The memory is full when the number of words clocked in exceeds the number of words clocked out by 256. When the memory is full, LDCK signals have no effect on the data residing in memory. When the memory is empty, UNCK signals have no effect.
Status of the FIFO memory is monitored by the full (FULL\), empty (EMPTY\), half-full (HF), and almost-full/almost-empty (AF/AE) flags. The FULL\ output is low when the memory is full and high when the memory is not full. The EMPTY\ output is low when the memory is empty and high when it is not empty. The HF output is high when the FIFO contains 128 or more words. The AF/AE status flag is a programmable flag. The first one or two low-to-high transitions of LDCK after reset are used to program the almost-empty offset value (X) and the almost-full offset value (Y) if program enable (PEN\) is low. The AF/AE flag is high when the FIFO contains X or fewer words or (256 - Y) or more words. The AF/AE flag is low when the FIFO contains between (X + 1) and (255 - Y) words.
A low level on the reset (RESET\) input resets the internal stack pointers and sets FULL\ high, HF low, and EMPTY\ low. The Q outputs are not reset to any specific logic level. The FIFO must be reset upon power up.The first word loaded into empty memory causes EMPTY\ to go high and the data to appear on the Q outputs. It is important to note that the first word does not have to be unloaded. The data outputs are noninverting with respect to the data inputs and are in the high-impedance state when the output-enable (OE\) input is high.
The SN74ACT7806 is characterized for operation from 0°C to 70°C.
技术文档
| 类型 | 标题 | 下载最新的英语版本 | 日期 | |||
|---|---|---|---|---|---|---|
| * | 数据表 | 256 X 18 Strobed First-In, First-Out Memory 数据表 (Rev. C) | 1998年 4月 1日 | |||
| 应用手册 | Implications of Slow or Floating CMOS Inputs (Rev. E) | 2021年 7月 26日 | ||||
| 选择指南 | Logic Guide (Rev. AB) | 2017年 6月 12日 | ||||
| 应用手册 | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015年 12月 2日 | ||||
| 选择指南 | 逻辑器件指南 2014 (Rev. AA) | 最新英语版本 (Rev.AB) | 2014年 11月 17日 | |||
| 用户指南 | LOGIC Pocket Data Book (Rev. B) | 2007年 1月 16日 | ||||
| 应用手册 | 选择正确的电平转换解决方案 (Rev. A) | 英语版 (Rev.A) | 2006年 3月 23日 | |||
| 应用手册 | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004年 7月 8日 | ||||
| 应用手册 | TI IBIS File Creation, Validation, and Distribution Processes | 2002年 8月 29日 | ||||
| 应用手册 | CMOS Power Consumption and CPD Calculation (Rev. B) | 1997年 6月 1日 | ||||
| 应用手册 | 使用逻辑器件进行设计 (Rev. C) | 1997年 6月 1日 | ||||
| 应用手册 | Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc | 1996年 4月 1日 | ||||
| 应用手册 | FIFO Memories: Solutions For Increasing Clock Rates And Data Widths (Rev. A) | 1996年 3月 1日 | ||||
| 应用手册 | Power-Dissipation Calculations for TI FIFO Products (Rev. A) | 1996年 3月 1日 |
设计和开发
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订购和质量
- RoHS
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