产品详情

Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
Technology family ABT Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 8 IOL (max) (mA) 48 Supply current (max) (µA) 250 IOH (max) (mA) -24 Input type TTL-Compatible CMOS Output type 3-State Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Ultra high speed (tpd <5ns) Rating Military Operating temperature range (°C) -55 to 125
CDIP (J) 20 167.464 mm² 24.2 x 6.92 CFP (W) 20 90.5828 mm² 13.09 x 6.92 LCCC (FK) 20 79.0321 mm² 8.89 x 8.89
  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.

  • State-of-the-Art EPIC-IIB™ BiCMOS Design Significantly Reduces Power Dissipation
  • Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB), and Thin Shrink Small-Outline (PW) Packages, Ceramic Chip Carriers (FK), Ceramic Flat (W) Package, and Plastic (N) and Ceramic (J) DIPs

EPIC-IIB is a trademark of Texas Instruments.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.

The SN54ABT541 and SN74ABT541B octal buffers and line drivers are ideal for driving bus lines or buffering memory address registers. The devices feature inputs and outputs on opposite sides of the package to facilitate printed circuit board layout.

The 3-state control gate is a two-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2) input is high, all eight outputs are in the high-impedance state.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT541 is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74ABT541B is characterized for operation from -40°C to 85°C.

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类型 标题 下载最新的英语版本 日期
* 数据表 SN54ABT541, SN74ABT541B 数据表 (Rev. L) 2006年 12月 1日
* SMD SN54ABT541 SMD 5962-94718 2016年 6月 21日
应用手册 Implications of Slow or Floating CMOS Inputs (Rev. E) 2021年 7月 26日
选择指南 Logic Guide (Rev. AB) 2017年 6月 12日
应用手册 Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
选择指南 逻辑器件指南 2014 (Rev. AA) 最新英语版本 (Rev.AB) 2014年 11月 17日
选择指南 《高级总线接口逻辑器件选择指南》 英语版 2010年 7月 7日
用户指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
应用手册 选择正确的电平转换解决方案 (Rev. A) 英语版 (Rev.A) 2006年 3月 23日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
应用手册 Quad Flatpack No-Lead Logic Packages (Rev. D) 2004年 2月 16日
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应用手册 Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 2002年 5月 10日
应用手册 Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 1997年 8月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 1997年 6月 1日
应用手册 使用逻辑器件进行设计 (Rev. C) 1997年 6月 1日
应用手册 Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 1997年 3月 1日
应用手册 Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 1996年 12月 1日
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应用手册 Understanding Advanced Bus-Interface Products Design Guide 1996年 5月 1日

设计和开发

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封装 引脚 下载
CDIP (J) 20 查看选项
CFP (W) 20 查看选项
LCCC (FK) 20 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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