SNOS966Q May   2001  – September 2014 LMH6642 , LMH6643 , LMH6644

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 3V Electrical Characteristics
    6. 7.6 5V Electrical Characteristics
    7. 7.7 ±5V Electrical Characteristics
    8. 7.8 Typical Performance Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Input and Output Topology
        2. 9.2.1.2 Single Supply, Low Power Photodiode Amplifier
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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7 Specifications

7.1 Absolute Maximum Ratings(1)(2)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Differential ±2.5 V
Output Short Circuit Duration See (4) and (6)
Supply Voltage (V+ - V) 13.5 V
Voltage at Input/Output pins V+ +0.8
V −0.8
V
Input Current ±10 mA
Junction Temperature(5) +150 °C
Soldering Information Infrared or Convection Reflow (20 sec) 235 °C
Wave Soldering Lead Temp.(10 sec) 260 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) Human body model, 1.5 kΩ in series with 100 pF. Machine Model, 0 Ω in series with 200 pF.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(5) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ RθJA . All numbers apply for packages soldered directly onto a PC board.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range −65 +150 °C
V(ESD) Electrostatic discharge(3) Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Machine model (MM)(3) 200
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 1000
(1) JEDEC document JEP155 states that 2000-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 1000-V CDM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 200-V MM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage (V+ – V) 2.7 12.8 V
Operating Temperature Range(2) −40 +85 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/ RθJA. All numbers apply for packages soldered directly onto a PC board.

7.4 Thermal Information

THERMAL METRIC(1) LMH6642 LMH6643 LMH6644 UNIT
DBV05A D08A DGK08A D14A PW14A
5 PINS 8 PINS 8 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient Thermal Resistance(2) 265 190 235 145 155 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 3V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 3V, V = 0V, VCM = VO = V+/2, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to V+/2.
PARAMETER TEST CONDITIONS AT
TEMPERATURE
EXTREMES
V+ = 3V, V = 0V,
VCM = VO = V+/2, VID
RL = 2 kΩ to V+/2
UNIT
MIN TYP MAX MIN(1) TYP(2) MAX(1)
BW −3dB BW AV = +1, VOUT = 200mVPP 80 115 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
Rf = 402Ω, VOUT = 200mVPP
19 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 1VPP 40 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = −1,
RL = 100Ω to V+/2
−48 dBc
DG Differential Gain VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2
0.17%
RL =1kΩ to V+/2 0.03%
DP Differential Phase VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2
0.05 deg
RL =1kΩ to V+/2 0.03
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68 ns
SR Slew Rate (3) AV = −1, VI = 2VPP 90 120 V/µs
VOS Input Offset Voltage For LMH6642 and LMH6644 ±7 ±1 ±5 mV
For LMH6643 ±7 ±1 ±3.4
TC VOS Input Offset Average Drift See (4) ±5 µV/°C
IB Input Bias Current See (5) −3.25 −1.50 −2.60 µA
IOS Input Offset Current 1000 20 800 nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −0.1 −0.5 −0.2 V
1.6 1.8 2.0
CMRR Common Mode Rejection Ratio VCM Stepped from 0V to 1.5V 72 95 dB
AVOL Large Signal Voltage Gain VO = 0.5V to 2.5V
RL = 2kΩ to V+/2
75 80 96 dB
VO = 0.5V to 2.5V
RL = 150Ω to V+/2
70 74 82
VO Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV 2.90 2.98 V
RL = 150Ω to V+/2, VID = 200mV 2.80 2.93
Output Swing
Low
RL = 2kΩ to V+/2, VID = −200mV 25 75 mV
RL = 150Ω to V+/2, VID = −200mV 75 150
ISC Output Short Circuit Current Sourcing to V+/2
VID = 200mV (6)
35 50 95 mA
Sinking to V+/2
VID = −200mV (6)
40 55 110
IOUT Output Current VOUT = 0.5V from either supply ±65 mA
+PSRR Positive Power Supply Rejection Ratio V+ = 3.0V to 3.5V, VCM = 1.5V 75 85 dB
IS Supply Current (per channel) No Load 4.50 2.70 4.00 mA
(1) All limits are ensured by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Short circuit test is a momentary test. See Note 7 under 5 V Electrical Characteristics.

7.6 5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 5V, V = 0V, VCM = VO = V+/2, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to V+/2.
PARAMETER TEST CONDITIONS AT TEMPERATURE EXTREMES V+ = 5V, V = 0V,
VCM = VO = V+/2, VID
RL = 2kΩ to V+/2
UNIT
MIN TYP MAX MIN(1) TYP(2) MAX(1)
BW −3dB BW AV = +1, VOUT = 200mVPP 90 120 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
Rf = 402Ω, VOUT = 200mVPP
15 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 2VPP 22 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2 −60 dBc
DG Differential Gain NTSC, AV = +2
RL =150Ω to V+/2
0.16%
RL = 1kΩ to V+/2 0.05%
DP Differential Phase NTSC, AV = +2
RL = 150Ω to V+/2
0.05 deg
RL = 1kΩ to V+/2 0.01
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load 68 ns
SR Slew Rate (3) AV = −1, VI = 2VPP 95 125 V/µs
VOS Input Offset Voltage For LMH6642 and LMH6644 ±7 ±1 ±5 mV
For LMH6643 ±7 ±1 ±3.4
TC VOS Input Offset Average Drift See (4) ±5 µV/°C
IB Input Bias Current See (5) −3.25 −1.70 −2.60 µA
IOS Input Offset Current 1000 20 800 nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −0.1 −0.5 −0.2 V
3.6 3.8 4.0
CMRR Common Mode Rejection Ratio VCM Stepped from 0V to 3.5V 72 95 dB
AVOL Large Signal Voltage Gain VO = 0.5V to 4.50V
RL = 2kΩ to V+/2
82 86 98 dB
VO = 0.5V to 4.25V
RL = 150Ω to V+/2
72 76 82
VO Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV 4.90 4.98 V
RL = 150Ω to V+/2, VID = 200mV 4.65 4.90
Output Swing
Low
RL = 2kΩ to V+/2, VID = −200mV 25 100 mV
RL = 150Ω to V+/2, VID = −200mV 100 150
ISC Output Short Circuit Current Sourcing to V+/2
VID = 200mV (6)(7)
40 55 115 mA
Sinking to V+/2
VID = −200mV (6)(7)
55 70 140
IOUT Output Current VO = 0.5V from either supply ±70 mA
+PSRR Positive Power Supply Rejection Ratio V+ = 4.0V to 6V 79 90 dB
IS Supply Current (per channel) No Load 5.00 2.70 4.25 mA
(1) All limits are ensured by testing or statistical analysis.
(2) Typical values represent the most likely parametric norm.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) Short circuit test is a momentary test. See Note 7.
(7) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.

7.7 ±5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 5V, V = −5V, VCM = VO = 0V, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to ground.
PARAMETER TEST CONDITIONS AT TEMPERATURE EXTREMES V+ = 5V, V = −5V,
VCM = VO = 0V, VID
UNIT
MIN TYP MAX MIN(2) TYP(1) MAX(2)
BW −3dB BW AV = +1, VOUT = 200mVPP 95 130 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
Rf = 806Ω, VOUT = 200mVPP
12 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 2VPP 24 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2 −62 dBc
DG Differential Gain NTSC, AV = +2
RL = 150Ω to V+/2
0.15%
RL = 1kΩ to V+/2 0.01%
DP Differential Phase NTSC, AV = +2
RL = 150Ω to V+/2
0.04 deg
RL = 1kΩ to V+/2 0.01
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68 ns
SR Slew Rate (4) AV = −1, VI = 2VPP 100 135 V/µs
VOS Input Offset Voltage For LMH6642 and LMH6644 ±7 ±1 ±5 mV
For LMH6643 ±7 ±1 ±3.4
TC VOS Input Offset Average Drift See (7) ±5 µV/°C
IB Input Bias Current See (3) −3.25 −1.60 −2.60 µA
IOS Input Offset Current 1000 20 800 nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −5.1 −5.5 −5.2 V
3.6 3.8 4.0
CMRR Common Mode Rejection Ratio VCM Stepped from −5V to 3.5V 74 95 dB
AVOL Large Signal Voltage Gain VO = −4.5V to 4.5V,
RL = 2kΩ
84 88 96 dB
VO = −4.0V to 4.0V,
RL = 150Ω
74 78 82
VO Output Swing
High
RL = 2kΩ, VID = 200mV 4.90 4.96 V
RL = 150Ω, VID = 200mV 4.65 4.80
Output Swing
Low
RL = 2kΩ, VID = −200mV −4.96 −4.90 V
RL = 150Ω, VID = −200mV −4.80 −4.65
ISC Output Short Circuit Current Sourcing to Ground
VID = 200mV (5)(6)
35 60 115 mA
Sinking to Ground
VID = −200mV (5)(6)
65 85 145
IOUT Output Current VO = 0.5V from either supply ±75 mA
PSRR Power Supply Rejection Ratio (V+, V) = (4.5V, −4.5V) to (5.5V, −5.5V) 78 90 dB
IS Supply Current (per channel) No Load 5.50 2.70 4.50 mA
(1) Typical values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Positive current corresponds to current flowing into the device.
(4) Slew rate is the average of the rising and falling slew rates.
(5) Short circuit test is a momentary test. See (6).
(6) Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(7) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.

7.8 Typical Performance Characteristics

V+ = +5, V = −5V, RF = RL = 2 kΩ. Unless otherwise specified.
20018557.gif
Figure 1. Closed Loop Frequency Response
for Various Supplies
20018535.gif
Figure 3. Closed Loop Gain vs. Frequency
for Various Gain
20018548.gif
Figure 5. Closed Loop Gain vs. Frequency
for Various Supplies
20018547.gif
Figure 7. Large Signal Frequency Response
20018544.gif
Figure 9. Closed Loop Frequency Response
for Various Supplies
20018509.gif
Figure 11. VOUT (VPP) for THD < 0.5%
20018510.gif
Figure 13. VOUT (VPP) for THD < 0.5%
20018533.gif
Figure 15. Open Loop Gain/Phase
for Various Temperature
20018515.gif
Figure 17. HD3 (dBc) vs. Output Swing
20018505.gif
Figure 19. HD3 vs. Output Swing
20018513.gif
Figure 21. Settling Time vs. Input Step Amplitude
(Output Slew and Settle Time)
20018518.gif
Figure 23. VOUT from V+ vs. ISOURCE
20018516.gif
Figure 25. VOUT from V+ vs. ISOURCE
20018529.gif
Figure 27. Swing vs. VS
20018520.gif
Figure 29. Output Sinking Saturation Voltage vs. IOUT
20018502.gif
Figure 31. Closed Loop Output Impedance
vs. Frequency AV = +1
20018507.gif
Figure 33. CMRR vs. Frequency
20018530.gif
Figure 35. VOS vs. VOUT (Typical Unit)
20018522.gif
Figure 37. VOS vs. VS (for 3 Representative Units)
20018524.gif
Figure 39. VOS vs. VS (for 3 Representative Units)
20018526.gif
Figure 41. IOS vs. VS
20018521.gif
Figure 43. IS vs. VS
20018541.gif
Figure 45. Large Signal Step Response
20018556.gif
Figure 47. Small Signal Step Response
20018552.gif
Figure 49. Small Signal Step Response
20018537.gif
Figure 51. Large Signal Step Response
20018560.gif
Figure 53. Large Signal Step Response
20018551.gif
Figure 2. Closed Loop Gain vs. Frequency
for Various Gain
20018550.gif
Figure 4. Closed Loop Frequency Response
for Various Temperature
20018534.gif
Figure 6. Closed Loop Frequency Response
for Various Temperature
First_page_plot_freq_vs_gain.gif
Figure 8. Closed Loop Small Signal Frequency Response
for Various Supplies
20018545.gif
Figure 10. ±0.1dB Gain Flatness
for Various Supplies
20018508.gif
Figure 12. VOUT (VPP) for THD < 0.5%
20018532.gif
Figure 14. Open Loop Gain/Phase
for Various Temperature
20018514.gif
Figure 16. HD2 (dBc) vs. Output Swing
20018504.gif
Figure 18. HD2 vs. Output Swing
20018506.gif
Figure 20. THD (dBc) vs. Output Swing
20018512.gif
Figure 22. Input Noise vs. Frequency
20018519.gif
Figure 24. VOUT from V vs. ISINK
20018517.gif
Figure 26. VOUT from V vs. ISINK
20018531.gif
Figure 28. Short Circuit Current (to VS/2) vs. VS
20018501.gif
Figure 30. Output Sourcing Saturation Voltage vs. IOUT
20018503.gif
Figure 32. PSRR vs. Frequency
20018511.gif
Figure 34. Crosstalk Rejection vs. Frequency
(Output to Output)
20018527.gif
Figure 36. VOS vs. VCM (Typical Unit)
20018523.gif
Figure 38. VOS vs. VS (for 3 Representative Units)
20018525.gif
Figure 40. IB vs. VS
20018528.gif
Figure 42. IS vs. VCM
20018553.gif
Figure 44. Small Signal Step Response
20018539.gif
Figure 46. Large Signal Step Response
20018536.gif
Figure 48. Small Signal Step Response
20018538.gif
Figure 50. Small Signal Step Response
20018554.gif
Figure 52. Large Signal Step Response