LM5112

正在供货

用于双电源操作、具有 4V UVLO 和输入接地的 3A/7A 单通道栅极驱动器

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open-in-new 比较替代产品
功能与比较器件相同但引脚有所不同
UCC27614 正在供货 具有 4V UVLO、30V VDD 和低传播延迟的 10A/10A 单通道栅极驱动器 Wide VDD and smaller package

产品详情

Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
Number of channels 1 Power switch MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Single
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9 WSON (NGG) 6 9 mm² 3 x 3
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
  • LM5112-Q1 is Qualified for Automotive Applications
  • AEC-Q100 Grade 1 Qualified
  • Manufactured on an Automotive Grade Flow
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 7-A Sink and 3-A Source Current
  • Fast Propagation Times: 25 ns (Typical)
  • Fast Rise and Fall Times: 14 ns or 12 ns
    Rise or Fall With 2-nF Load
  • Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
  • Supply Rail Undervoltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for
    Split Supply or Single Supply Operation
  • Power Enhanced 6-Pin WSON Package
    (3 mm × 3 mm) or Thermally Enhanced
    MSOP-PowerPAD Package
  • Output Swings From VCC to VEE Which Are Negative Relative to Input Ground

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

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类型 标题 下载最新的英语版本 日期
* 数据表 LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver 数据表 (Rev. C) PDF | HTML 2015年 10月 22日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
选择指南 电源管理指南 2018 (Rev. K) 2018年 7月 31日
选择指南 电源管理指南 2018 (Rev. R) 2018年 6月 25日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日
应用手册 An Alternative Approach to Higher-Power Boost Converters 2009年 11月 30日

设计和开发

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评估板

UCC27423-4-5-Q1EVM — 具有使能端的 UCC2742xQ1 双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)

UCC2742xQ1 EVM 是一款高速双 MOSFET 评估模块,其提供了用于快速轻松地启动 UCC2742xQ1 驱动器的测试平台。由 4V 到 15V 外部单电源供电,具有一整套测试点和跳线。所有器件均具有独立的输入和输出线路,且所有器件均共享一个共用接地。提供使能 (ENBL) 功能旨在更好地控制驱动器应用的操作,器件的驱动器信号可通过同一使能引脚启用或禁用。
用户指南: PDF
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仿真模型

LM5112 PSpice Transient Model

SNVM300.ZIP (73 KB) - PSpice Model
仿真模型

LM5112 TINA-TI Transient Reference Design

SNVM391.TSC (579 KB) - TINA-TI Reference Design
仿真模型

LM5112 TINA-TI Transient Spice Model

SNVM390.ZIP (8 KB) - TINA-TI Spice Model
仿真模型

LM5112 Unencrypted PSpice Transient Model

SNVMAD6.ZIP (1 KB) - PSpice Model
模拟工具

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice®

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用,包括业内超大的模型库之一,涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

借助 PSpice for TI 的设计和仿真环境及其内置的模型库,您可对复杂的混合信号设计进行仿真。创建完整的终端设备设计和原型解决方案,然后再进行布局和制造,可缩短产品上市时间并降低开发成本。

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封装 引脚 下载
HVSSOP (DGN) 8 查看选项
WSON (NGG) 6 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

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