LF412-N 低偏移、低漂移双路 JFET 输入运算放大器 | 德州仪器 TI.com.cn

LF412-N (正在供货) 低偏移、低漂移双路 JFET 输入运算放大器

低偏移、低漂移双路 JFET 输入运算放大器 - LF412-N
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Other devices and data sheet

Other device variants can also be found in the   LF412-N-MIL product page

描述

These devices are low cost, high speed, JFET input operational amplifiers with very low input offset voltage and input offset voltage drift. They require low supply current yet maintain a large gain bandwidth product and fast slew rate. In addition, well matched high voltage JFET input devices provide very low input bias and offset currents. The LF412-N dual is pin compatible with the LM1558, allowing designers to immediately upgrade the overall performance of existing designs.

These amplifiers may be used in applications such as high speed integrators, fast D/A converters, sample and hold circuits and many other circuits requiring low input offset voltage and drift, low input bias current, high input impedance, high slew rate and wide bandwidth.

特性

  • Internally Trimmed Offset Voltage: 1 mV (Max)
  • Input Offset Voltage Drift: 7 µV/°C (Typ)
  • Low Input Bias Current: 50 pA
  • Low Input Noise Current: 0.01 pA / √Hz
  • Wide Gain Bandwidth: 3 MHz (Min)
  • High Slew Rate: 10V/µs (Min)
  • Low Supply Current: 1.8 mA/Amplifier
  • High Input Impedance: 1012Ω
  • Low Total Harmonic Distortion: ≤0.02%
  • Low 1/f Noise Corner: 50 Hz
  • Fast Settling Time to 0.01%: 2 µs

参数

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Part number 立即下单 Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
LF412-N 立即下单 2     10     44     4     15     In to V+     3     1.8     25     Catalog     0 to 70     PDIP | 8     See datasheet (PDIP)     7         200     100     25     FET