LF156QML (正在供货)

JFET Input Operational Amplifiers

JFET Input Operational Amplifiers - LF156QML
数据表
 

描述

This is the first monolithic JFET input operational amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The device is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

特性

  • Advantages
    • Replace Expensive Hybrid and Module FET Op Amps
    • Rugged JFETs Allow Blow-Out Free Handling Compared with MOSFET Input Devices
    • Excellent for Low Noise Applications Using Either High or Low Source Impedance—Very Low 1/f Corner
    • Offset Adjust Does Not Degrade Drift or Common-Mode Rejection as in Most Monolithic Amplifiers
    • New Output Stage Allows Use of Large Capacitive Loads (5,000 pF) Without Stability Problems
    • Internal Compensation and Large Differential Input Voltage Capability

Common Features

  • Low Input Bias Current: 30pA
  • Low Input Offset Current: 3pA
  • High Input Impedance: 1012Ω
  • Low Input Noise Current: 0.01 pA / √Hz
  • High Common-Mode Rejection Ratio: 100 dB
  • Large DC Voltage Gain: 106 dB

Uncommon Features

  • Extremely Fast Settling
    • Time to 0.01% 1.5μs
  • Fast Slew Rate 12V/µs
  • Wide Gain Bandwidth 5MHz
  • Low Input Noise Voltage 12 nV / √Hz

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Number of Channels (#)
Total Supply Voltage (Min) (+5V=5, +/-5V=10)
GBW (Typ) (MHz)
Slew Rate (Typ) (V/us)
Rail-to-Rail
Vos (Offset Voltage @ 25C) (Max) (mV)
Iq per channel (Typ) (mA)
Rating
Operating Temperature Range (C)
Package Group
Output Current (Typ) (mA)
Offset Drift (Typ) (uV/C)
Vn at 1kHz (Typ) (nV/rtHz)
Architecture
IIB (Max) (pA)
CMRR (Typ) (dB)
Package Size: mm2:W x L (PKG)
LF156QML
1   
10   
5   
12   
In to V+   
5   
5   
Military   
-55 to 125   
TO-99   
25   
5   
12   
FET   
100   
100   
8TO-99: 80 mm2: 8.96 x 8.96(TO-99)