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MOSFET 栅极驱动器

EMB1412 处于停产状态
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产品详情

Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125 Rating Catalog
Features MOSFET Gate Driver Device type Cell monitor and balancer Operating temperature range (°C) -40 to 125 Rating Catalog
HVSSOP (DGN) 8 14.7 mm² 3 x 4.9
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground
  • Compound CMOS and Bipolar Outputs Reduce
    Output Current Variation
  • 7 A Sink/3 A Source Current
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns/12 ns Rise
    Fall with 2 nF Load)
  • Inverting and Non-Inverting Inputs Provide
    Either Configuration with a Single Device
  • Supply Rail Under-Voltage Lockout Protection
  • Dedicated Input Ground (IN_REF) for Split
    Supply or Single Supply Operation
  • Thermally Enhanced 8-Pin VSSOP Package
  • Output Swings from VCC to VEE Which can
    be Negative Relative to Input Ground

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

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类型 标题 下载最新的英语版本 日期
* 数据表 EMB1412 MOSFET Gate Driver 数据表 (Rev. B) PDF | HTML 2014年 11月 20日
应用简报 了解峰值源电流和灌电流 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日
应用简报 适用于栅极驱动器的外部栅极电阻器设计指南 (Rev. A) 英语版 (Rev.A) 2020年 4月 29日

设计和开发

如需其他信息或资源,请点击以下任一标题进入详情页面查看(如有)。

评估板

UCC27423-4-5-Q1EVM — 具有使能端的 UCC2742xQ1 双路 4A 高速低侧 MOSFET 驱动器评估模块 (EVM)

UCC2742xQ1 EVM 是一款高速双 MOSFET 评估模块,其提供了用于快速轻松地启动 UCC2742xQ1 驱动器的测试平台。由 4V 到 15V 外部单电源供电,具有一整套测试点和跳线。所有器件均具有独立的输入和输出线路,且所有器件均共享一个共用接地。提供使能 (ENBL) 功能旨在更好地控制驱动器应用的操作,器件的驱动器信号可通过同一使能引脚启用或禁用。
用户指南: PDF
TI.com 上无现货
封装 引脚 下载
HVSSOP (DGN) 8 查看选项

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点

支持和培训

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