SLVSDM3 February   2017 DRV3220-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Serial Peripheral Interface Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Programming
      1. 7.3.1 SPI
        1. 7.3.1.1 Address Mode Transfer
          1. 7.3.1.1.1 SPI Address Transfer Phase
        2. 7.3.1.2 SPI Data Transfer Phase
        3. 7.3.1.3 Device Data Response
    4. 7.4 Register Maps
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Three-Phase Motor Drive-Device for Automotive Application
    3. 8.3 System Example
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
POS MIN MAX UNIT
2.1 DC voltage VS, VSH –0.3 60 V
2.1a VS Negative voltages with minimum serial resistor 5 Ω, TA = 25°C –5 V
2.1c Negative voltages with minimum serial resistor 5 Ω, TA = 105°C –2.5 V
2.1b VSH Negative voltages with minimum serial resistor 10 Ω, TA = 25°C –5 V
2.1d Negative voltages with minimum serial resistor 10 Ω, TA = 105°C –2.5 V
2.2A Gate high-side voltage GHSx –9 70 V
2.2B Source high-side voltage SHSx –9 70 V
2.3 Gate-source high-side voltage difference GHSx-SHSx Externally driven, internal limited, see position 5.4 in Electrical Characteristics –0.3 15 V
2.4 Gate low-side voltage GLSx –9 20 V
2.5 Source low-side voltage SLSx –9 7 V
2.6 Gate-source low-side voltage difference GLSx-SLSx Externally driven, internal limited, see position 5.5 in Electrical Characteristics –0.3 15 V
2.7 Boost converter BOOST, SW –0.3 70 V
2.9 Analog input voltage VDDIO –0.3 60 V
2.9a ADREF –0.3 60 V
2.11 RVSET –0.3 60 V
2.10 Digital input voltage ILSx,IHSx, EN, DRVOFF, SCLK, NCS, SDI –0.3 60 V
2.13 Difference between GNDA and GNDLS_B GNDA, GNDLS_B –0.3 0.3 V
2.20 Maximum slew rate of SHSx pins, SRSHS –250 250 V/µs
2.21 Analog and digital output voltages ERR, SDO, RO –0.3 6 V
2.22 Unused pins (connect to GND) TEST –0.3 0.3 V
2.24 Internal supply voltage VCC5 –0.3 6 V
2.25 VCC3 –0.3 3.6 V
2.21A Forced input and output current ERR, SDO, RO –10 10 mA
2.24A Short-to-ground current, IVCC5(3) Internal current limit 80 mA
2.26 Short-to-ground current, IVCC3 Limited by VCC5 80 mA
2.27 Driver FET total gate charge (per FET), Qgmax VS = 12 V, ƒPWM = 20 kHz, 6 FETs ON/OFF per PWM cycle 200(4) nC
2.28 VS = 24 V, ƒPWM = 20 kHz, 6 FETs ON/OFF per PWM cycle 100(4) nC
2.14 Operating virtual junction temperature, TJ –40 150 °C
2.15 Storage temperature, Tstg –55 165 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal, unless specified otherwise.
(3) IVCC5 is not specifying VCC5 output current capability for external load. The allowed external load on VCC5 is specified at position 3.18 in Recommended Operating Conditions.
(4) The maximum value also depends on PCB thermal design, modulation scheme, and motor operation time.

6.2 ESD Ratings

POS VALUE UNIT
2.17 V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) All pins ±2000 V
Pins 4, 6, and 14 ±4000
2.18 Charged-device model (CDM), per AEC Q100-011 All pins ±500
2.19 Corner pins (1, 12, 13, 24, 25, 36, 37, and 48) ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

POS MIN NOM MAX UNIT
3.1 VVS Supply voltage, normal voltage operation Full device functionality. Operation at VS = 4.75 V only when coming from higher VS. Minimum VS for startup = 4.85 V 4.75 40 V
3.2 VVSLO Supply voltage, logic operation Logic functional (during battery cranking after coming from full device functionality) 4 40 V
3.3 VVDDIO Supply voltage for digital I/Os 2.97 5.5 V
3.14 VCC3 Internal supply voltage VS > 4 V, external load current <100 µA, decoupling capacitor typical 0.1 µF 3(1) 3.3 V
3.17 VCC5 Internal supply voltage VS > 6 V, external load current < 100 µA, decoupling capacitor typical 1 µF 5.15 5.45 V
3.6A IVSn VS quiescent current normal operation (boost converter enabled, drivers not switching) Boost converter enabled, see and for SHSx/SLSx connections. EN_GDBIAS = 1 22 mA
3.61A Boost converter enabled, see and for SHSx/SLSx connections. EN_GDBIAS = 0 22.3 mA
3.6B IBOOSTn BOOST pin quiescent current normal operation (drivers not switching) 4.75 V < VS < 20 V, TA = 25°C to 125°C 9 mA
3.62B 4.75 V < VS < 20 V, TA = –40°C 10
3.6C 20 < VS < 40 V, TA = 25°C to 125°C 9.5
3.6C1 20 < VS < 40 V, TA = –40°C 10.5
3.61B IVSn VS quiescent additional current normal operation because of RVSET thermal voltage output enabled (boost converter enabled, drivers not switching) THERMAL_RVSET_EN = 1 0.6 mA
3.6D IBOOST,sw BOOST pin additional load current because of switching gate drivers Excluding FET gate charge current. 20-kHz all gate drivers switching at the same time. EN_GDBIAS = 1 4 mA
3.61D Excluding FET gate charge current. 20-kHz all gate drivers switching at the same time. EN_GDBIAS = 0 5.4
3.75 IVSq_1 VS quiescent current shutdown (sleep mode) 1 VS = 14 V, no operation, TJ < 25°C, EN = Low, total leakage current on all supply connected pins 20 µA
3.75a IVSq_2 VS quiescent current shutdown (sleep mode) 2 VS = 14 V, no operation, TJ < 85°C, EN = Low, total leakage current on all supply connected pins 30 µA
3.15 IVCC3 VCC3 output current Intended for MCU ADC input 0 100 µA
3.18 IVCC5 VCC5 output current Intended for MCU ADC input 0 100 µA
3.16 CVCC3 VCC3 decoupling capacitance 0.075 0.1 0.2 µF
3.19 CVCC5 VCC5 decoupling capacitance 0.5 1 1.5 µF
3.4 D Duty cycle of bridge drivers 0% 100%
3.5 ƒPWM PWM switching frequency 0 22(1) kHz
3.8 TJ Junction temperature –40 150 °C
3.9 TA Operating ambient free-air temperature With proper thermal connection –40 125 °C
(1) Maximum PWM allowed also depends on maximum operating temperature, FET gate charge current, VS supply voltage, modulation scheme, and PCB thermal design.

6.4 Thermal Information

THERMAL METRIC(1) DRV3220-Q1 UNIT
PHP (HTQFP)
48 PINS
RθJA Junction-to-ambient thermal resistance 25.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 10.3 °C/W
RθJB Junction-to-board thermal resistance 6 °C/W
ψJT Junction-to-top characterization parameter 0.2 °C/W
ψJB Junction-to-board characterization parameter 5.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating temperature TJ = –40°C to 150°C and recommended operating conditions, VS = 4.75 V to 40 V(4), ƒPWM < 20 kHz (unless otherwise noted)
POS PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
4.4 ADREF / VDDIO
4.4.3 IADREF ADREF bias current ADREF = 3.3 V, pin to ground 300 µA
4.4.4 Vovadref Overvoltage threshold, ADREF ADREF: 3.3-V setting by RVSET resistor 3.696 3.795 3.894 V
4.4.4a ADREF: 5-V setting by RVSET resistor 5.6 5.75 5.9 V
4.4.5 Vuvadref Undervoltage threshold, ADREF ADREF: 3.3-V setting by RVSET resistor 2.706 2.805 2.904 V
4.4.5a ADREF: 5-V setting by RVSET resistor 4.1 4.25 4.4 V
4.4.7 Vovvddio Overvoltage threshold, VDDIO VDDIO: 3.3-V setting by RVSET resistor 3.696 3.795 3.894 V
4.4.7a VDDIO: 5-V setting by RVSET resistor 5.6 5.75 5.9 V
4.4.8 Vuvvddio Undervoltage threshold, VDDIO VDDIO: 3.3-V setting by RVSET resistor 2.706 2.805 2.904 V
4.4.8a VDDIO: 5-V setting by RVSET resistor 4.1 4.25 4.4 V
4.4.10 RRVSET33 RVSET resistance VDDIO = 3.3 V; ADREF = 3.3-V mode; STAT6 bit[3:0] = 4’b0001 135 150 165 kΩ
4.4.11 RRVSET53 VDDIO = 5 V; ADREF = 3.3-V mode; STAT6 bit[3:0] = 4’b0100 46 51 56.5 kΩ
4.4.12 RRVSET35 VDDIO = 3.3 V; ADREF = 5-V mode; STAT6 bit[3:0] = 4’b1000 13.5 15 16.5 kΩ
4.4.13 RRVSET55 VDDIO = 5 V; ADREF = 5-V mode; STAT6 bit[3:0] = 4’b0010 4.6 5.1 5.65 kΩ
4.4.30 RRVSETopen RVSET resistor error detection Open 650 kΩ
4.4.31 RRVSETshort Short 1.5
4.4.32 VRVSETn40 RVSET output voltage –40°C TJ, THERMAL_RVSET_EN = 1 1.67 1.745 1.82 V
4.4.33 VRVSET25 25°C TJ, THERMAL_RVSET_EN = 1 1.445 1.535 1.625
4.4.34 VRVSET125 125°C TJ, THERMAL_RVSET_EN = 1 1.085 1.195 1.305
VCC3 / VCC5 REGULATORS
4.4.14 VCC3 VCC3 regulator output voltage VS > 4 V 3 3.15 3.3 V
4.4.15 VCC3UV VCC3 regulator undervoltage threshold VS > 4 V 2.7 2.85 3 V
4.4.16 VCC3OV VCC3 regulator overvoltage threshold(1) VS > 4 V 3.3 3.45 3.6 V
4.4.17 VCC5_1 VCC5 regulator output voltage 1 VS > 6 V 5.15 5.3 5.45 V
4.4.18 VCC5_2 VCC5 regulator output voltage 2 6 V > VS > 4.75 V 4.6 5.45 V
4.4.19 VCC5UV VCC5 regulator undervoltage threshold VS > 4.75 V 4.3 4.6 V
4.4.20 VCC5OV VCC5 regulator overvoltage threshold VS > 4.75 V 5.45 5.6 5.75 V
5. GATE DRIVER
5.1 VGS,low Gate-source voltage low, high-side/low-side driver Active pulldown, Iload = –2 mA 0 0.2 V
5.2 RGSp Passive gate-source resistance Vgs ≤ 200 mV  110 220 330 kΩ
5.3 RGSsa Semi-active gate-source resistance In sleep mode, VGS > 2 V 2 4 kΩ
5.3b IGSL01 Low-side driver pullup/pulldown current Gate driven low by gate driver,
CURR1, 3 = 01, SPI configurable 		TYP × 0.65 0.65 TYP × 1.35 A
5.3c IGSL00 Gate driven low by gate driver(1),
CURR1, 3 = 00, SPI configurable		 TYP × 0.1 0.15 TYP × 1.9 A
5.3d IGSL10 Gate driven low by gate driver,
CURR1, 3 = 11, SPI configurable		 TYP × 0.65 1.1 TYP × 1.35 A
5.3f IGSH01 High-side driver pullup/pulldown current Gate driven low by gate driver,
CURR0, 2 = 01, SPI configurable		 TYP × 0.65 0.65 TYP × 1.35 A
5.3g IGSH00 Gate driven low by gate driver(1),
CURR0, 2 = 00, SPI configurable		 TYP × 0.1 0.15 TYP × 1.9 A
5.3h IGSH11 Gate driven low by gate driver,
CURR0, 2 = 11, SPI configurable		 TYP × 0.65 1.1 TYP × 1.35 A
5.3i IGSHsd High-side/low-side driver shutdown current 2 30 70 mA
5.4 VGS,HS,high High-side output voltage Iload = –2 mA; 4.75 V < VS < 40 V 9 13.4 V
5.5 VGS,LS,high Low-side output voltage Iload = –2 mA 9 13.4 V
5.27 tDon Propagation on delay time After ILx/IHx rising edge, Cload = 10 nF, CURR1, 3 = 10, VGS = 1 V 100 200 350 ns
5.31 Adt Accuracy of dead time If not disabled in CFG1 –15% 15%
5.32 IHSxlk_1 Source leak current, total leakage current of source pins EN = L, SHSx = 1.5 V, TJ < 125°C –5 5 µA
5.32a IHSxlk_2 EN = L, SHSx = 1.5 V, 125°C < TJ < 150°C –40 40 µA
5.29 tDoff Propagation off delay time(5) ILx/IHx falling edge to VGS,LS,high(VGS,HS,high) – 1 V Ciss = 10 nF, CURR1,3 = 10, 100 200 350 ns
5.30 tDoffdiff Propagation off delay time difference(5) LSx to LSy and HSx to HSy Cload = 10 nF, CURR1,3 = 10, VGS,LS,high(VGS,HS,high) – 1 V 50 ns
5.30a tDon_Doff_diff Difference between propagation on delay time and propagation off delay time(5) For each gate driver in each channel:
Cload = 10 nF, CURR1, 3 = 10, VGS = 1 V (rising), VGS,LS,high(VGS,HS,high) – 1 V (falling)		 150 ns
5.30c tENoff Propagation off (EN) deglitch time(5) After falling edge on EN 2.5 6 12 µs
5.30d tSD Time until gate drivers initiate shutdown(5) After falling edge on EN 12 24 µs
5.30e tSDDRV Time until gate drivers initiate shutdown(5) After rising edge on DRVOFF 10 µs
6. BOOST CONVERTER
6.1 VBOOST Boost output voltage excluding switching ripple and response delay. BOOST – VS voltage 14 15 16.5 V
6.1b VBOOSTOV Boost output voltage overvoltage with respect GND 64 67.5 70 V
6.2 IBOOST Output current capability External load current including external MOSFET gate charge current
BOOST – VS > VBOOSTUV		 40 mA
6.3 ƒBOOST Switching frequency BOOST – VS > VBOOSTUV; ensured by characterization(3) 1.8 2.5 3 MHz
6.31 BOOST – VS > VBOOSTUV; VS < 6 V; ensured by characterization (3) 1.1 3
6.4 VBOOSTUV Undervoltage shutdown level BOOST – VS voltage 7 8 V
6.4a VBOOSTUV2 Undervoltage condition that device may enter RESET state BOOST – GND voltage 10 V
6.5 tBCSD Filter time for undervoltage detection 5 6 µs
6.7 VGNDLS_B,off Voltage at GNDLS_B pin at which boost FET switches off because of current limit 110 150 200 mV
6.7a tSW,off Delay of the GNDLS_B current limit comparator Specified by design 100 ns
6.8 ISW,fail Internal second-level current limit GNDLS_B = 0 V 840 1600 mA
6.9 Rdson_BSTfet Rdson resistance boost FET VS ≥ 6; ISW = VGNDLS_B,off / 0.33 Ω 0.25 1.5 Ω
6.9a VS < 6; ISW= VGNDLS_B,off / 0.33 Ω 2 Ω
7. DIGITAL INPUTS
7.1 INL Input low threshold All digital inputs NCS, DRVOFF, ILSx, IHSx, SDI VDDIO × 0.3 V
7.1a ENH EN input high threshold VS > 4 V 2.7 V
7.1b ENL EN input low threshold VS > 4 V 0.7 V
7.2 INH Input high threshold All digital inputs NCS, DRVOFF, ILSx, IHSx, SDI VDDIO × 0.7 V
7.3 Inhys Input hysteresis All digital inputs EN, NCS, DRVOFF, ILSx, IHSx, SDI, VDDIO = 5 V 0.3 0.4 V
7.3a All digital inputs EN, NCS, DRVOFF, ILSx, IHSx, SDI, VDDIO = 3.3 V 0.2 0.3 V
7.4 Rpd,EN Input pulldown resistor at EN pin EN 140 200 360 kΩ
7.4a tdeg,ENon Power-up time after EN pin high from sleep mode to active mode ERR = L → H 5 ms
7.5 Rpullup Input pullup resistance NCS, DRVOFF 200 280 400 kΩ
7.6 Rpulldown Input pulldown resistance ILSx, IHSx, SDI , SCLK Input voltage = 0.1 V 100 140 200 kΩ
7.6a Rpulldown Input pulldown current ILSx, IHSx, SDI, SCLK Input voltage = VDDIO 4 50 µA
8. DIGITAL OUTPUTS
8.1 OH1 Output high voltage 1 All digital outputs: SDO, I = ±2 mA; VDDIO in functional range(6) VDDIO × 0.9 V
8.2 OL1 Output low voltage 1 All digital outputs: SDO, I = ±2 mA; VDDIO in functional range VDDIO × 0.1 V
8.1 OH2 Output high voltage 2 ERR I = –0.2 mA; VDDIO in functional range VDDIO × 0.9 V
8.2 OL2 Output low voltage 2 ERR I = +0.2 mA; VDDIO in functional range VDDIO × 0.1 V
9. VDS, VGS, MONITORING
9.1 VSCTH VDS short-circuit threshold range If not disabled in CFG1 0.1 2 V
9.2 Avds Accuracy of VDS monitoring 0.1-V to 0.5-V threshold setting –50 50 mV 
0.6-V to 2-V threshold setting –10% 10%
9.3 tVDS Detection filter time Only rising edge of VDS comparators are filtered 5 µs
9.4 Vgserr+_1 VGS error detection 1 STAT7, IHSx (ILSx) = H 7 8.5 V
9.5 Vgserr– VGS error detection STAT7, IHSx (ILSx) = L 2 V
9.6 tVGS Detection filter time CFG6[5:4] 1.0 µs
9.6a tVGSm Detection mask time CFG6[2:0] 2.5 µs
10. THERMAL SHUTDOWN
10.1 Tmsd0 Thermal recovery Specified by characterization 130 153 178 °C
10.2 Tmsd1 Thermal warning Specified by characterization 140 165 190 °C
10.3 Tmsd2 Thermal global reset Specified by characterization 170 195 220 °C
10.4 Thmsd Thermal shutdown×2 hysteresis Specified by characterization 40 °C
10.5 tTSD1 Thermal warning filter time Specified by characterization 40 45 50 µs
10.6 tTSD2 Thermal shutdown×2 filter time Specified by characterization 2.5 6 12 µs
12. VS MONITORING
12.1 VVS,OVoff0 Overvoltage shutdown level range(2) Programmable CFG5 mode1, 12-V/24-V mode 29 38 V
12.1a VVS,OVoff1 Overvoltage shutdown level(2) 29-V threshold setting 27.5 29 30.5 V
12.1b VVS, OVon1 Recovery level form overvoltage shutdown(2) 29-V threshold setting 26.5 28 29.5 V
12.1c VVS,OVoff2 Overvoltage shutdown level(2) 33-V threshold setting 32 33.5 35 V
12.1d VVS, OVon2 Recovery level form overvoltage shutdown(2) 33-V threshold setting 31 32.5 34 V
12.1e VVS,OVoff3 Overvoltage shutdown level(2) 38-V threshold setting 36.5 38 39.5 V
12.1f VVS, OVon3 Recovery level form overvoltage shutdown(2) 38-V threshold setting 35.5 37 38.5 V
12.2 VVS,UVoff Undervoltage shutdown level(2) VS is falling from higher voltage than 4.75 V 4.5 4.75 V
12.2a VVS,UVon Recovery level form undervoltage shutdown(2) Minimum VS for device startup 4.6 4.85 V
12.3 tVS,SHD Filter time for overvoltage/undervoltage shutdown 5 6 µs
(1) ADREF / VDDIO overvoltage and undervoltage is set by RVSET.
(2) Shutdown signifies predriver shutdown, not VCC3/VCC5 regulator shutdown.
(3) During startup when BOOST – VS < VBOOSTUV , ƒBOOST is typically 1.25 MHz.
(4) Product life time depends on VS voltage, PCB thermal design, modulation scheme, and motor operation time. The product is designed for 12-V and 24-V battery system.
(5) Ensured by characterization.
(6) All digital outputs have a push-pull output stage between VDDIO and ground.

6.6 Serial Peripheral Interface Timing Requirements

POS 13 MIN NOM MAX UNIT
13.1 ƒSPI SPI clock (SCLK) frequency 4(1) MHz
13.2 tSPI SPI clock period(2) 250 ns
13.3 thigh High time: SCLK logic high duration(2) 90 ns
13.4 tlow Low time: SCLK logic low duration(2) 90 ns
13.5 tsucs Setup time NCS: time between falling edge of NCS and rising edge of SCLK(2) tSPI / 2 ns
13.6 td1 Delay time: time delay from falling edge of NCS to data valid at SDO(5) 60 ns
13.7 tsusi Setup time at SDI: setup time of SDI before the rising edge of SCLK(2) 30 ns
13.8 td2 Delay time: time delay from falling edge of SCLK to data valid at SDO(5) 0 60 ns
13.9 thcs Hold time: time between the falling edge of SCLK and rising edge of NCS(2) 45 ns
13.10 thlcs SPI transfer inactive time (time between two transfers)(2) 250 ns
13.11 ttri Tri-state delay time: time between rising edge of NCS and SDO in tri-state(2) 30 ns
(1) The maximum SPI clock tolerance is ±10%.
(2) Ensured by characterization.
DRV3220-Q1 tim_SPI_LVSCV1.gif Figure 1. SPI Timing Parameters

6.7 Typical Characteristics

DRV3220-Q1 D001_SLVSCV1.gif
Figure 2. VS Quiescent Current Shutdown
DRV3220-Q1 D002_SLVSCV1.gif
Figure 3. VS Quiescent Current Shutdown