ZHCSG72 April   2017 CSD87313DMS

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5 Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 DMS 封装尺寸
    2. 7.2 建议 PCB 布局
    3. 7.3 建议模板开口

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DMS|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
IS1S2 Source1-to-Source2 leakage current VG1S1 = 0 V, VG2S2 = 0 V, VS1S2 = 24 V 1 μA
IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 10 V 100 nA
VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS1S2 = 250 μA 0.6 0.9 1.2 V
RS1S2(on) Source1-to-Source2 on resistance VGS = 2.5 V, IS1S2 = 20 A 6.7 9.6 mΩ
VGS = 4.5 V, IS1S2 = 23 A 4.6 5.5
gfs Transconductance VS1S2 = 3 V, IS1S2 = 23 A 149 S
DYNAMIC CHARACTERISTICS(1)
CISS Input capacitance VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz 3300 4290 pF
COSS Output capacitance 281 365 pF
CRSS Reverse transfer capacitance 154 200 pF
Qg Gate charge total (4.5 V) VS1S2 = 15 V, IS1S2 = 23 A
VG1S1 = 4.5 V, VG2S2 = 0 V		 28 nC
Qgd Gate charge gate-to-drain 6.0 nC
Qgs Gate charge gate-to-source 6.3 nC
Qg(th) Gate charge at Vth 3.2 nC
td(on) Turnon delay time VS1S2 = 15 V, IS1S2 = 23 A
VGS = 4.5 V, RGEN = 0 Ω		 9 ns
tr Rise time 27 ns
td(off) Turnoff delay time 41 ns
tf Fall time 13 ns
DIODE CHARACTERISTICS
Ifss Maximum continuous Source1-to-Source2 diode forward current(2) VG1S1 = 0 V, VG2S2 = 4.5 V 2 A
Vfss Source1-to-Source2 diode forward voltage VG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 23 A 0.8 1.0 V
(1) Dynamic characteristic measurements are for a single FET.
(2) Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC UNIT
RθJA Junction-to-case thermal resistance(1) 125 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 45 °C/W
(1) Device mounted on minimum 2-oz (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

CSD87313DMS m0161-01_lps202.gif
RθJA = 45°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD87313DMS m0161-02_lps202.gif
RθJA = 125°C/W when mounted on a minimum pad area of
2-oz (0.071-mm) thick Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD87313DMS D002_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5% VG2S2 = 4.5 V
Figure 1. Saturation Characteristics
CSD87313DMS D014_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5% VG2S2 = 4.5 V
Figure 3. Saturation Characteristics
CSD87313DMS D008_SLPS634.gif
IS1S2 = 23 A VGS = 15 V
Figure 5. Normalized On-State Resistance vs Temperature
CSD87313DMS D003_SLPS634.gif
VS1S2 = 5 V
Figure 7. Transfer Characteristics
CSD87313DMS D004_SLPS634.gif
ID = 23 A VS1S2 = 15 V
Figure 9. Gate Charge
CSD87313DMS D010_SLPS634_r2.gif
Single pulse, RθJA = 125°C/W
Figure 11. Maximum Safe Operating Area
CSD87313DMS D006_SLPS634.gif
ID = 250 µA
Figure 13. Threshold Voltage vs Temperature
CSD87313DMS D012_SLPS642.gif
Figure 15. Maximum Source1-to-Source2 Current vs Temperature
CSD87313DMS D002b_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%
Figure 2. Saturation Characteristics
CSD87313DMS D015_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%
Figure 4. Saturation Characteristics
CSD87313DMS D007_SLPS634.gif
Figure 6. On-State Resistance vs Gate-to-Source Voltage
CSD87313DMS D009_SLPS634.gif
Figure 8. Typical Diode Forward Voltage
CSD87313DMS D005_SLPS634.gif
Figure 10. Capacitance
CSD87313DMS D013_SLPS634.gif
RθJA = 125 °C/W, TA = 25°C
Figure 12. Single Pulse Maximum Power Dissipation
CSD87313DMS D011_SLPS634.gif
Figure 14. Single Pulse Unclamped Inductive Switching
CSD87313DMS D001_SLPS634.gif
Figure 16. Transient Thermal Impedance