ZHCSG72 April 2017 CSD87313DMS

PRODUCTION DATA. 

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5 Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1接收文档更新通知
    2. 6.2社区资源
    3. 6.3商标
    4. 6.4静电放电警告
    5. 6.5Glossary
  7. 7机械、封装和可订购信息
    1. 7.1DMS 封装尺寸
    2. 7.2建议 PCB 布局
    3. 7.3建议模板开口

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DMS|8
订购信息

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
IS1S2Source1-to-Source2 leakage current VG1S1 = 0 V, VG2S2 = 0 V, VS1S2 = 24 V1μA
IGSSGate-to-source leakage currentVS1S2 = 0 V, VGS = 10 V100nA
VGS(th)Gate-to-source threshold voltageVS1S2 = VGS, IS1S2 = 250 μA0.60.91.2 V
RS1S2(on)Source1-to-Source2 on resistanceVGS = 2.5 V, IS1S2 = 20 A6.79.6
VGS = 4.5 V, IS1S2 = 23 A4.65.5
gfsTransconductanceVS1S2 = 3 V, IS1S2 = 23 A149S
DYNAMIC CHARACTERISTICS(1)
CISSInput capacitanceVGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz3300 4290pF
COSSOutput capacitance281365pF
CRSSReverse transfer capacitance154200pF
QgGate charge total (4.5 V)VS1S2 = 15 V, IS1S2 = 23 A
VG1S1 = 4.5 V, VG2S2 = 0 V
28nC
QgdGate charge gate-to-drain6.0nC
QgsGate charge gate-to-source6.3nC
Qg(th)Gate charge at Vth3.2nC
td(on)Turnon delay timeVS1S2 = 15 V, IS1S2 = 23 A
VGS = 4.5 V, RGEN = 0 Ω
9ns
trRise time27ns
td(off)Turnoff delay time41ns
tfFall time13ns
DIODE CHARACTERISTICS
IfssMaximum continuous Source1-to-Source2 diode forward current(2)VG1S1 = 0 V, VG2S2 = 4.5 V2A
VfssSource1-to-Source2 diode forward voltageVG1S1 = 0 V, VG2S2 = 4.5 V, Ifss = 23 A0.81.0V
Dynamic characteristic measurements are for a single FET.
Typical RθJA = 125°C/W on a minimum 2-oz Cu pad.

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICUNIT
RθJAJunction-to-case thermal resistance(1)125°C/W
RθJAJunction-to-ambient thermal resistance(1)(2)45°C/W
Device mounted on minimum 2-oz (0.071-mm) thick Cu.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

CSD87313DMS m0161-01_lps202.gif
RθJA = 45°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD87313DMS m0161-02_lps202.gif
RθJA = 125°C/W when mounted on a minimum pad area of
2-oz (0.071-mm) thick Cu.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD87313DMS D002_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%VG2S2 = 4.5 V
Figure 1. Saturation Characteristics
CSD87313DMS D014_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%VG2S2 = 4.5 V
Figure 3. Saturation Characteristics
CSD87313DMS D008_SLPS634.gif
IS1S2 = 23 AVGS = 15 V
Figure 5. Normalized On-State Resistance vs Temperature
CSD87313DMS D003_SLPS634.gif
VS1S2 = 5 V
Figure 7. Transfer Characteristics
CSD87313DMS D004_SLPS634.gif
ID = 23 AVS1S2 = 15 V
Figure 9. Gate Charge
CSD87313DMS D010_SLPS634_r2.gif
Single pulse, RθJA = 125°C/W
Figure 11. Maximum Safe Operating Area
CSD87313DMS D006_SLPS634.gif
ID = 250 µA
Figure 13. Threshold Voltage vs Temperature
CSD87313DMS D012_SLPS642.gif
Figure 15. Maximum Source1-to-Source2 Current vs Temperature
CSD87313DMS D002b_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%
Figure 2. Saturation Characteristics
CSD87313DMS D015_SLPS634.gif
Pulse width = 250 µs, duty cycle = 0.5%
Figure 4. Saturation Characteristics
CSD87313DMS D007_SLPS634.gif
Figure 6. On-State Resistance vs Gate-to-Source Voltage
CSD87313DMS D009_SLPS634.gif
Figure 8. Typical Diode Forward Voltage
CSD87313DMS D005_SLPS634.gif
Figure 10. Capacitance
CSD87313DMS D013_SLPS634.gif
RθJA = 125 °C/W, TA = 25°C
Figure 12. Single Pulse Maximum Power Dissipation
CSD87313DMS D011_SLPS634.gif
Figure 14. Single Pulse Unclamped Inductive Switching
CSD87313DMS D001_SLPS634.gif
Figure 16. Transient Thermal Impedance