ZHCSGA1 May   2017 CSD22206W

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 接收文档更新通知
    2. 6.2 社区资源
    3. 6.3 商标
    4. 6.4 静电放电警告
    5. 6.5 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 CSD22206W 封装尺寸
    2. 7.2 建议的焊盘图案

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –8 V
BVGSS Gate-to-source voltage VDS = 0 V, IG = –250 μA –6 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = –6.4 V –1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA –0.4 –0.7 –1.05 V
RDS(on) Drain-to-source on resistance VGS = –2.5 V, IDS = –2 A 6.8 9.1 mΩ
VGS = –4.5 V, IDS = –2 A 4.7 5.7
gfs Transconductance VDS = –0.8 V, IDS = –2 A 20 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = –4 V,
ƒ = 1 MHz		 1750 2275 pF
COSS Output capacitance 960 1250 pF
CRSS Reverse transfer capacitance 340 440 pF
RG Series gate resistance 30 Ω
Qg Gate charge total (–4.5 V) VDS = –4 V,
ID = –2 A		 11.2 14.6 nC
Qgd Gate charge gate-to-drain 1.8 nC
Qgs Gate charge gate-to-source 2.1 nC
Qg(th) Gate charge at Vth 1.3 nC
QOSS Output charge VDS = –4 V, VGS = 0 V 7.2 nC
td(on) Turnon delay time VDS = –4 V, VGS = –4.5 V,
IDS = –2 A, RG = 0 Ω		 37 ns
tr Rise time 17 ns
td(off) Turnoff delay time 118 ns
tf Fall time 45 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = –2 A, VGS = 0 V –0.69 –1.0
Qrr Reverse recovery charge VDS= –4 V, IF = –1 A,
di/dt = 200 A/μs 		24 nC
trr Reverse recovery time 59 ns

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC TYPICAL VALUES UNIT
RθJA Junction-to-ambient thermal resistance(1) 75 °C/W
Junction-to-ambient thermal resistance(2) 230
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.

CSD22206W M0149-01_LPS266.gif
Typ RθJA = 75°C/W when mounted on 1 in2 of 2-oz Cu.
CSD22206W M0150-01_LPS266.gif
Typ RθJA = 230°C/W when mounted on minimum pad area of
2-oz Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD22206W D001_SLPS636.png
Figure 1. Transient Thermal Impedance
CSD22206W D002_SLPS636.gif
Figure 2. Saturation Characteristics
CSD22206W D004_SLPS636.gif
ID = –2 A VDS = –4 V
Figure 4. Gate Charge
CSD22206W D006_SLPS636.gif
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD22206W D008_SLPS636.gif
ID = –2 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD22206W D010_SLPS636.gif
Single pulse, max RθJA = 75°C/W
Figure 10. Maximum Safe Operating Area
CSD22206W D003_SLPS636.gif
VDS = –4 V
Figure 3. Transfer Characteristics
CSD22206W D005_SLPS636.gif
Figure 5. Capacitance
CSD22206W D007_SLPS636.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD22206W D009_SLPS636.gif
Figure 9. Typical Diode Forward Voltage
CSD22206W D011_SLPS636.gif
Figure 11. Maximum Drain Current vs Temperature