ZHCSCO7B June 2014  – April 2017 CSD17573Q5B

PRODUCTION DATA. 

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1Electrical Characteristics
    2. 5.2Thermal Information
    3. 5.3Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1接收文档更新通知
    2. 6.2社区资源
    3. 6.3商标
    4. 6.4静电放电警告
    5. 6.5Glossary
  7. 7机械、封装和可订购信息
    1. 7.1Q5B 封装尺寸
    2. 7.2建议 PCB 布局
    3. 7.3建议模板布局
    4. 7.4Q5B 卷带信息

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0 V, ID = 250 μA30V
IDSS Drain-to-source leakage currentVGS = 0 V, VDS = 24 V1μA
IGSS Gate-to-source leakage currentVDS = 0 V, VGS = 20 V100nA
VGS(th) Gate-to-source threshold voltageVDS = VGS, ID = 250 μA1.11.41.8V
RDS(on) Drain-to-source on resistanceVGS = 4.5 V, ID = 35 A1.191.45
VGS = 10 V, ID = 35 A0.841.00
gƒs TransconductanceVDS = 15 V, ID = 35 A181S
DYNAMIC CHARACTERISTICS
Ciss Input capacitanceVGS = 0 V, VDS = 15 V, ƒ = 1 MHz6920 9000pF
Coss Output capacitance7691000pF
Crss Reverse transfer capacitance300390pF
RG Series gate resistance0.91.8Ω
Qg Gate charge total (4.5 V)VDS = 15 V, ID = 35 A4964nC
Qgd Gate charge gate-to-drain11.9nC
Qgs Gate charge gate-to-source17.1nC
Qg(th)Gate charge at Vth8.6nC
Qoss Output chargeVDS = 30 V, VGS = 0 V21nC
td(on) Turnon delay timeVDS = 15 V, VGS = 10 V,
IDS = 35 A, RG = 0 Ω
6ns
tr Rise time20ns
td(off) Turnoff delay time40ns
tƒ Fall Time7ns
DIODE CHARACTERISTICS
VSD Diode forward voltageISD = 35 A, VGS = 0 V0.81V
Qrr Reverse recovery chargeVDS= 15 V, IF = 35 A,
di/dt = 300 A/μs
29nC
trr Reverse recovery time21ns

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICMINTYPMAXUNIT
RθJC Junction-to-case thermal resistance(1) 0.8°C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 50°C/W
RθJC is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.

CSD17573Q5B M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of
2-oz (0.071-mm) thick Cu.
CSD17573Q5B M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on a minimum pad area of
2-oz (0.071-mm) thick Cu.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD17573Q5B graph01_SLPS492.png
Figure 1. Transient Thermal Impedance
CSD17573Q5B graph02_SLPS492.png
Figure 2. Saturation Characteristics
CSD17573Q5B graph04_SLPS492.png
ID = 35 AVDS = 15 V
Figure 4. Gate Charge
CSD17573Q5B graph06_SLPS492.png
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD17573Q5B graph08_SLPS492.png
ID = 35 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD17573Q5B D010_SLPS492.gif
Single pulse, max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
CSD17573Q5B graph12_SLPS492.png
Figure 12. Maximum Drain Current vs Temperature
CSD17573Q5B graph03_SLPS492.png
VDS = 5 V
Figure 3. Transfer Characteristics
CSD17573Q5B graph05_SLPS492.png
Figure 5. Capacitance
CSD17573Q5B graph07_SLPS492.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD17573Q5B graph09_SLPS492.png
Figure 9. Typical Diode Forward Voltage
CSD17573Q5B graph11_SLPS492.png
Figure 11. Single Pulse Unclamped Inductive Switching