ZHCSGW5A January 2017  – August 2017 CC2640R2F-Q1

PRODUCTION DATA. 

  1. 1器件概述
    1. 1.1特性
    2. 1.2应用
    3. 1.3说明
    4. 1.4功能框图
  2. 2修订历史记录
  3. 3 Device Comparison
    1. 3.1Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1Pin Diagram - RGZ Package
    2. 4.2Signal Descriptions - RGZ Package
    3. 4.3Wettable Flanks
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Power Consumption Summary
    5. 5.5 General Characteristics
    6. 5.6 1-Mbps GFSK (Bluetooth low energy Technology) - RX
    7. 5.7 1-Mbps GFSK (Bluetooth low energy Technology) - TX
    8. 5.8 24-MHz Crystal Oscillator (XOSC_HF)
    9. 5.9 32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 5.1048-MHz RC Oscillator (RCOSC_HF)
    11. 5.1132-kHz RC Oscillator (RCOSC_LF)
    12. 5.12ADC Characteristics
    13. 5.13Temperature Sensor
    14. 5.14Battery Monitor
    15. 5.15Continuous Time Comparator
    16. 5.16 Low-Power Clocked Comparator
    17. 5.17Programmable Current Source
    18. 5.18Synchronous Serial Interface (SSI)
    19. 5.19DC Characteristics
    20. 5.20Thermal Resistance Characteristics for RGZ Package
    21. 5.21Timing Requirements
    22. 5.22Switching Characteristics
    23. 5.23Typical Characteristics
  6. 6Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Main CPU
    4. 6.4 RF Core
    5. 6.5 Sensor Controller
    6. 6.6 Memory
    7. 6.7 Debug
    8. 6.8 Power Management
    9. 6.9 Clock Systems
    10. 6.10General Peripherals and Modules
    11. 6.11System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1Application Information
    2. 7.27 × 7 Internal Differential (7ID) Application Circuit
      1. 7.2.1Layout
  8. 8器件和文档支持
    1. 8.1 器件命名规则
    2. 8.2 工具和软件
    3. 8.3 文档支持
    4. 8.4 德州仪器 (TI) 低功耗射频网站
    5. 8.5 社区资源
    6. 8.6 其他信息
    7. 8.7 商标
    8. 8.8 静电放电警告
    9. 8.9 出口管制提示
    10. 8.10术语表
  9. 9机械、封装和可订购信息
    1. 9.1封装信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
订购信息

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MINMAXUNIT
Supply voltage, VDDS(3)VDDR supplied by internal DC/DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB.–0.34.1V
Voltage on any digital pin(4)–0.3VDDS + 0.3, max 4.1V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P–0.3VDDR + 0.3, max 2.25V
Voltage on ADC input (Vin) Voltage scaling enabled–0.3 VDDSV
Voltage scaling disabled, internal reference–0.31.49
Voltage scaling disabled, VDDS as reference–0.3VDDS / 2.9
Input RF level5dBm
Tstg Storage temperature–40150 °C
All voltage values are with respect to ground, unless otherwise noted.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VDDS2 and VDDS3 need to be at the same potential as VDDS.
Including analog-capable DIO.

ESD Ratings

VALUEUNIT
VESDElectrostatic dischargeHuman Body Model (HBM), per AEC Q100-002(1)(2)All pins±2000V
Charged Device Model (CDM), per AEC Q100-011(3)XOCS pins 46, 47±250
All other pins±500
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
Ambient temperature–40105°C
Operating supply voltage, VDDSFor operation in battery-powered and 3.3-V systems
(internal DC/DC can be used to minimize power consumption)
1.83.8V

Power Consumption Summary

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V with internal DC/DC converter, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Icore Core current consumptionReset. RESET_N pin asserted or VDDS below power-on-reset (POR) threshold100nA
Shutdown. No clocks running, no retention150
Standby. With RTC, CPU, RAM and (partial) register retention. RCOSC_LF1.3µA
Standby. With RTC, CPU, RAM and (partial) register retention. XOSC_LF1.5
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF3.4
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF3.6
Idle. Supply Systems and RAM powered.650
Active. Core running CoreMark1.45 mA + 31 µA/MHz
Radio RX6.1mA
Radio TX, 0-dBm output power7.0
Radio TX, 5-dBm output power9.3
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(1)
IperiPeripheral power domain Delta current with domain enabled20µA
Serial power domainDelta current with domain enabled13µA
RF CoreDelta current with power domain enabled, clock enabled, RF core idle237µA
µDMADelta current with clock enabled, module idle130µA
TimersDelta current with clock enabled, module idle113µA
I2CDelta current with clock enabled, module idle12µA
I2SDelta current with clock enabled, module idle36µA
SSIDelta current with clock enabled, module idle93µA
UARTDelta current with clock enabled, module idle164µA
Iperi is not supported in Standby or Shutdown.

General Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
FLASH MEMORY
Supported flash erase cycles before failure100k Cycles
Maximum number of write operations per row before erase(1)83write operations
Flash retention105°C11.4Years at 105°C
Flash page/sector erase currentAverage delta current12.6mA
Flash page/sector size4KB
Flash write currentAverage delta current, 4 bytes at a time8.15mA
Flash page/sector erase time(2)8ms
Flash write time(2)4 bytes at a time8µs
Each row is 2048 bits (or 256 bytes) wide.
This number is dependent on Flash aging and will increase over time and erase cycles.

1-Mbps GFSK (Bluetooth low energy Technology) – RX

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Receiver sensitivityDifferential mode. Measured at the CC2640Q1EM-7ID SMA connector, BER = 10–3–97dBm
Receiver saturationDifferential mode. Measured at the CC2640Q1EM-7ID SMA connector, BER = 10–34dBm
Frequency error toleranceDifference between the incoming carrier frequency and the internally generated carrier frequency–350350kHz
Data rate error toleranceDifference between incoming data rate and the internally generated data rate–750750ppm
Co-channel rejection(2)Wanted signal at –67 dBm, modulated interferer in channel, BER = 10–3–6dB
Selectivity, ±1 MHz(2)Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10–37 / 2(1)dB
Selectivity, ±2 MHz(2)Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz, BER = 10–339 / 17(1)dB
Selectivity, ±3 MHz(2)Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10–338 / 30(1)dB
Selectivity, ±4 MHz(2)Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10–342 / 36(1)dB
Selectivity, ±5 MHz or more(2)Wanted signal at –67 dBm, modulated interferer at ≥ ±5 MHz, BER = 10–332dB
Selectivity, Image frequency(2)Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10–317dB
Selectivity, Image frequency
±1 MHz(2)
Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10–32 / 30(1)dB
Out-of-band blocking (3)30 MHz to 2000 MHz–20dBm
Out-of-band blocking2003 MHz to 2399 MHz–5dBm
Out-of-band blocking2484 MHz to 2997 MHz–8dBm
Out-of-band blocking3000 MHz to 12.75 GHz–8dBm
IntermodulationWanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level–34dBm
Spurious emissions,
30 MHz to 1000 MHz
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47, Part 15 and ARIB STD-T-66–65dBm
Spurious emissions,
1 GHz to 12.75 GHz
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47, Part 15 and ARIB STD-T-66–52dBm
RSSI dynamic range70dB
RSSI accuracy±4dB
X / Y, where X is +N MHz and Y is –N MHz.
Numbers given as I/C dB.
Excluding one exception at Fwanted / 2, per Bluetooth Specification.

1-Mbps GFSK (Bluetooth low energy Technology) – TX

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Output power, highest settingDifferential mode, delivered to a single-ended 50-Ω load through a balun5dBm
Output power, lowest settingDelivered to a single-ended 50-Ω load through a balun–21dBm
Spurious emission conducted measurement(1)f < 1 GHz, outside restricted bands–44dBm
f < 1 GHz, restricted bands ETSI–62dBm
f < 1 GHz, restricted bands FCC–62dBm
f > 1 GHz, including harmonics–55dBm
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

24-MHz Crystal Oscillator (XOSC_HF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
ESR Equivalent series resistance(2)6 pF < CL ≤ 9 pF2060Ω
ESR Equivalent series resistance(2)5 pF < CL ≤ 6 pF80Ω
LM Motional inductance(2)Relates to load capacitance
(CL in Farads)
< 1.6 × 10–24 / CL2H
CL Crystal load capacitance(2)59pF
Crystal frequency(2)(3)24MHz
Crystal frequency tolerance(2)(4)–4040ppm
Start-up time(3)(5)150µs
Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
The crystal manufacturer's specification must satisfy this requirement
Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance, as per Bluetooth specification.
Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.

32.768-kHz Crystal Oscillator (XOSC_LF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Crystal frequency(1) 32.768 kHz
Crystal frequency tolerance, Bluetooth low-energy applications(1)(2) –500 500 ppm
ESR Equivalent series resistance(1)30100
CL Crystal load capacitance(1)612pF
The crystal manufacturer's specification must satisfy this requirement.
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance, as per Bluetooth specification.

48-MHz RC Oscillator (RCOSC_HF)

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Frequency48MHz
Uncalibrated frequency accuracy±1%
Calibrated frequency accuracy(1)±0.25%
Start-up time5µs
Accuracy relative to the calibration source (XOSC_HF).

32-kHz RC Oscillator (RCOSC_LF)

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Calibrated frequency(1)32.8kHz
Temperature coefficient50ppm/°C
The frequency accuracy of the real time clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC oscillator. The RTC can be calibrated by measuring the frequency error of RCOSC_LF relative to XOSC_HF and compensating the RTC tick speed.

ADC Characteristics

Tc = 25°C, VDDS = 3.0 V without internal DC/DC converter and with voltage scaling enabled, unless otherwise noted.(1)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Input voltage range0VDDS V
Resolution12Bits
Sample rate200ksps
OffsetInternal 4.3-V equivalent reference(2)2LSB
Gain errorInternal 4.3-V equivalent reference(2)2.4LSB
DNL(3)Differential nonlinearity>–1LSB
INL(4)Integral nonlinearity±3LSB
ENOBEffective number of bitsInternal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
9.8Bits
VDDS as reference, 200 ksps, 9.6-kHz input tone10
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
11.1
THD Total harmonic distortionInternal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
–65dB
VDDS as reference, 200 ksps, 9.6-kHz input tone–69
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
–71
SINAD,
SNDR
Signal-to-noise
and
Distortion ratio
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
60dB
VDDS as reference, 200 ksps, 9.6-kHz input tone63
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
69
SFDRSpurious-free dynamic rangeInternal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
67dB
VDDS as reference, 200 ksps, 9.6-kHz input tone72
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
73
Conversion timeSerial conversion, time-to-output, 24-MHz clock50clock-cycles
Current consumption Internal 4.3-V equivalent reference(2)0.66mA
Current consumptionVDDS as reference0.75mA
Reference voltageEquivalent fixed internal reference (input voltage scaling enabled). For best accuracy, the ADC conversion should be initiated through the TI-RTOS API to include the gain/offset compensation factors stored in FCFG1. 4.3(2)(5)V
Reference voltageFixed internal reference (input-voltage scaling disabled). For the best accuracy, the ADC conversion should be initiated through the TI-RTOS API to include the gain/offset compensation factors stored in FCFG1. This value is derived from the scaled value (4.3 V) as follows.
Vref = 4.3 V × 1408 / 4095
1.48V
Reference voltageVDDS as reference (also known as RELATIVE) (input voltage scaling enabled)VDDSV
Reference voltageVDDS as reference (also known as RELATIVE) (input voltage scaling disabled)VDDS / 2.82(5)V
Input Impedance200 ksps, voltage scaling enabled. Capacitive input, input impedance depends on sampling frequency and sampling time>1
Using IEEE Std 1241™-2010 for terminology and test methods.
Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see Figure 5-21).
For a typical example, see Figure 5-22.
Applied voltage must be within absolute maximum ratings at all times (see Section 5.1).

Temperature Sensor

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Resolution4°C
Range–40105°C
Accuracy±5°C
Supply voltage coefficient(1)3.2°C/V
Automatically compensated when using supplied driver libraries.

Battery Monitor

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Resolution50mV
Range1.83.8V
Accuracy13mV

Continuous Time Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Input voltage range0VDDS V
External reference voltage0VDDSV
Internal reference voltageDCOUPL as reference1.27V
Offset3mV
Hysteresis<2mV
Decision timeStep from –10 mV to 10 mV0.72µs
Current consumption when enabled(1)8.6µA
Additionally, the bias module must be enabled when running in standby mode.

Low-Power Clocked Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Input voltage range0VDDS V
Clock frequency32kHz
Internal reference voltage, VDDS / 21.49–1.51V
Internal reference voltage, VDDS / 31.01–1.03V
Internal reference voltage, VDDS / 40.78–0.79V
Internal reference voltage, DCOUPL / 11.25–1.28V
Internal reference voltage, DCOUPL / 20.63–0.65V
Internal reference voltage, DCOUPL / 30.42–0.44V
Internal reference voltage, DCOUPL / 40.33–0.34V
Offset<2mV
Hysteresis<5mV
Decision timeStep from –50 mV to 50 mV<1clock-cycle
Current consumption when enabled362nA

Programmable Current Source

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Current source programmable output range0.25–20µA
Resolution0.25µA
Current consumption(1)Including current source at maximum programmable output23µA
Additionally, the bias module must be enabled when running in standby mode.

Synchronous Serial Interface (SSI)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
S1(1) tclk_per (SSIClk period) Device operating as SLAVE12 65024 system clocks
S2(1) tclk_high (SSIClk high time) Device operating as SLAVE0.5 tclk_per
S3(1) tclk_low (SSIClk low time) Device operating as SLAVE0.5 tclk_per
S1 (TX only)(1) tclk_per (SSIClk period)One-way communication to SLAVE:
Device operating as MASTER
465024system clocks
S1 (TX and RX)(1) tclk_per (SSIClk period)Normal duplex operation:
Device operating as MASTER
865024system clocks
S2(1) tclk_high (SSIClk high time)Device operating as MASTER0.5 tclk_per
S3(1) tclk_low(SSIClk low time)Device operating as MASTER0.5 tclk_per
Refer to SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3.
CC2640R2F-Q1 td_1_swrs158.gif Figure 5-1 SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
CC2640R2F-Q1 td_2_swrs158.gif Figure 5-2 SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer
CC2640R2F-Q1 td_3_swrs158.gif Figure 5-3 SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

DC Characteristics

PARAMETERTEST CONDITIONSMINTYPMAXUNIT
TA = 25°C, VDDS = 1.8 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only1.321.54V
GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only0.260.32V
GPIO VOH at 4-mA loadIOCURR = 11.321.58V
GPIO VOL at 4-mA loadIOCURR = 10.210.32V
GPIO pullup currentInput mode, pullup enabled, V(pad) = 0 V71.7µA
GPIO pulldown currentInput mode, pulldown enabled, V(pad) = VDDS21.1µA
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1 0.88V
GPIO low-to-high input transition,
with hysteresis
IH = 1, transition voltage for input read as 0 → 11.07V
GPIO high-to-low input transition,
with hysteresis
IH = 1, transition voltage for input read as 1 → 00.74V
GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points0.33V
TA = 25°C, VDDS = 3.0 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only2.68V
GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only0.33V
GPIO VOH at 4-mA loadIOCURR = 12.72V
GPIO VOL at 4-mA loadIOCURR = 10.28V
TA = 25°C, VDDS = 3.8 V
GPIO pullup currentInput mode, pullup enabled, V(pad) = 0 V277µA
GPIO pulldown currentInput mode, pulldown enabled, V(pad) = VDDS113µA
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1 1.67V
GPIO low-to-high input transition,
with hysteresis
IH = 1, transition voltage for input read as 0 → 11.94V
GPIO high-to-low input transition,
with hysteresis
IH = 1, transition voltage for input read as 1 → 01.54V
GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points0.4V
TA = 25°C
V(IH) Lowest GPIO input voltage reliably interpreted as a «High»0.8VDDS(1)
V(IL) Highest GPIO input voltage reliably interpreted as a «Low»0.2VDDS(1)
Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.3 for more details.

Thermal Resistance Characteristics for RGZ Package

over operating free-air temperature range (unless otherwise noted)
NAMEDESCRIPTION(°C/W)(1)(2)
JA Junction-to-ambient thermal resistance29.6
JC(top) Junction-to-case (top) thermal resistance15.7
JB Junction-to-board thermal resistance6.2
PsiJT Junction-to-top characterization parameter0.3
PsiJB Junction-to-board characterization parameter6.2
JC(bot) Junction-to-case (bottom) thermal resistance1.9
°C/W = degrees Celsius per watt.
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see the following EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.

Timing Requirements

MINNOMMAXUNIT
Rising supply-voltage slew rate0100mV/µs
Falling supply-voltage slew rate020mV/µs
Falling supply-voltage slew rate, with low-power flash settings(1)3mV/µs
Positive temperature gradient in standby(3)No limitation for negative temperature gradient, or outside standby mode5°C/s
CONTROL INPUT AC CHARACTERISTICS(2)
RESET_N low duration1µs
For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see Figure 7-1) must be used to ensure compliance with this slew rate.
TA = –40°C to +105°C, VDDS = 1.8 V to 3.8 V, unless otherwise noted.
Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see Section 5.11).

Switching Characteristics

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
WAKEUP and TIMING
Idle → Active 14 µs
Standby → Active151µs
Shutdown → Active1015µs

Typical Characteristics

CC2640R2F-Q1 D001_BLE-Sensitivity-vs-Temperature-SWRS201A.gif
Figure 5-4 Bluetooth low energy Sensitivity vs Temperature
CC2640R2F-Q1 D003_BLE-Sensitivity-vs-Channel-Frequency-SWRS201A.gif
Figure 5-6 Bluetooth low energy Sensitivity vs
Channel Frequency
CC2640R2F-Q1 D005_TX-Output-Power-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-8 TX Output Power vs Supply Voltage (VDDS)
CC2640R2F-Q1 D007_TX-Current-Consumption-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-10 TX Current Consumption
vs Supply Voltage (VDDS)
CC2640R2F-Q1 D009_RX-Mode-Current-Consumption-vs-Temperature-SWRS201A.gif
Figure 5-12 RX Mode Current Consumption vs Temperature
CC2640R2F-Q1 D011_Active-Mode-(MCU-Running-No-Peripherals)-Current-Consumption-vs-Temp-SWRS201A.gif
Figure 5-14 Active Mode (MCU Running, No Peripherals)
Current Consumption vs Temperature
CC2640R2F-Q1 D013_Standby-Mode-Current-Consumption-with-RCOSC-RTC-vs-Temp-SWRS201A.gif
Figure 5-16 Standby Mode Current Consumption
vs Temperature
CC2640R2F-Q1 D015_ADC-Output-vs-Supply-Voltage-(Fixed-Input-Internal-Ref-No-Scaling)-SWRS201A.gif
Figure 5-18 SoC ADC Output vs Supply Voltage
(Fixed Input, Internal Reference, No Scaling)
CC2640R2F-Q1 D019_ADC-ENOB-vs-sampling-frequency_SWRS201A.gif
Figure 5-20 SoC ADC ENOB vs Sampling Frequency
(Input Frequency = FS / 10)
CC2640R2F-Q1 D002_BLE-Sensitivity-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-5 Bluetooth low energy Sensitivity vs
Supply Voltage (VDDS)
CC2640R2F-Q1 D004_TX-Output-Power-vs-Temperature-SWRS201A.gif
Figure 5-7 TX Output Power vs Temperature
CC2640R2F-Q1 D006_TX-Output-Power-vs-Channel-Frequency-SWRS201A.gif
Figure 5-9 TX Output Power
vs Channel Frequency
CC2640R2F-Q1 D008_RX-Mode-Current-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-11 RX Mode Current vs Supply Voltage (VDDS)
CC2640R2F-Q1 D010_TX-Mode-Current-Consumption-vs-Temperature-SWRS201A.gif
Figure 5-13 TX Mode Current Consumption vs Temperature
CC2640R2F-Q1 D012_Active-Mode-(MCU-Running-No-Peripherals)-Current-Consumption-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-15 Active Mode (MCU Running, No Peripherals)
Current Consumption vs Supply Voltage (VDDS)
CC2640R2F-Q1 D014_ADC-ENOB-vs-Input-Frequency-(Internal-REference-No-Scaling)-SWRS201A.gif
Figure 5-17 SoC ADC Effective Number of Bits vs
Input Frequency (Internal Reference, No Scaling)
CC2640R2F-Q1 D016_ADC-Output-vs-Temperature-(Fixed-Input-Internal-Reference-No-Scaling)-SWRS201A.gif
Figure 5-19 SoC ADC Output vs Temperature
(Fixed Input, Internal Reference, No Scaling)
CC2640R2F-Q1 D017_ADC-DNL-vs-ADC-Code-SWRS201A.gif
Figure 5-21 SoC ADC DNL vs ADC Code (Internal Reference, No Scaling)
CC2640R2F-Q1 D018_ADC-INL-vs-ADC-Code-SWRS201A.gif
Figure 5-22 SoC ADC INL vs ADC Code (Internal Reference, No Scaling)