ZHCSCR2 July   2014

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 说明（续）
  7. 7 Pin Configuration and Functions
  8. 8 Specifications
    1. 8.1  Absolute Maximum Ratings
    2. 8.2  Handling Ratings
    3. 8.3  Recommended Operating Conditions
    4. 8.4  Thermal Information
    5. 8.5  Electrical Characteristics: Supply Current
    6. 8.6  Electrical Characteristics: I/O
    7. 8.7  Electrical Characteristics: ADC
    8. 8.8  Electrical Characteristics: Power-On Reset
    9. 8.9  Electrical Characteristics: Oscillator
    10. 8.10 Electrical Characteristics: Data Flash Memory
    11. 8.11 Electrical Characteristics: Register Backup
    12. 8.12 SMBus Timing Specifications
    13. 8.13 Typical Characteristics
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Primary (1st Level) Safety Features
      2. 9.3.2 Secondary (2nd Level) Safety Features
      3. 9.3.3 Charge Control Features
      4. 9.3.4 Fuel Gauging
      5. 9.3.5 Lifetime Data Logging
      6. 9.3.6 Authentication
      7. 9.3.7 Battery Parameter Measurements
        1. 9.3.7.1 Current and Coulomb Counting
        2. 9.3.7.2 Voltage
        3. 9.3.7.3 Temperature
    4. 9.4 Device Functional Modes
    5. 9.5 Programming
      1. 9.5.1 Physical Interface
      2. 9.5.2 SMBus Address
      3. 9.5.3 SMBus On and Off State
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Applications
      1. 10.2.1 Schematic
      2. 10.2.2 Design Requirements
      3. 10.2.3 Detailed Design Procedure
        1. 10.2.3.1 Measurement System
          1. 10.2.3.1.1 Cell Voltages
          2. 10.2.3.1.2 External Average Cell Voltage
          3. 10.2.3.1.3 Current
          4. 10.2.3.1.4 Temperature
        2. 10.2.3.2 Gas Gauging
        3. 10.2.3.3 Charging
          1. 10.2.3.3.1 Fast Charging Voltage
          2. 10.2.3.3.2 Fast Charging Current
          3. 10.2.3.3.3 Other Charging Modes
        4. 10.2.3.4 Protection
        5. 10.2.3.5 Peripheral Features
          1. 10.2.3.5.1 LED Display
          2. 10.2.3.5.2 SMBus Address
      4. 10.2.4 Application Performance Plots
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Power Supply Decoupling Capacitor
      2. 12.1.2 MRST Connection
      3. 12.1.3 Communication Line Protection Components
      4. 12.1.4 ESD Spark Gap
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 相关文档　
    2. 13.2 商标
    3. 13.3 静电放电警告
    4. 13.4 术语表
  14. 14机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Specifications

8.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC relative to VSS Supply voltage range –0.3 2.75 V
V(IOD) relative to VSS Open-drain I/O pins –0.3 6 V
VI relative to VSS Input voltage range to all other pins –0.3 VCC + 0.3 V
TA Operating free-air temperature range –40 85 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

8.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
VESD(1) Human Body Model (HBM) ESD stress voltage(2) –2 2 kV
Charged Device Model (CDM) ESD stress voltage(3) –500 500 V
(1) Electrostatic discharge (ESD) that measures device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device.
(2) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM enables safe manufacturing with a standard ESD control process. Pins listed as 1000 V may actually have a higher performance.
(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250-V CDM enables safe manufacturing with a standard ESD control process. Pins listed as 250 V may actually have a higher performance.

8.3 Recommended Operating Conditions

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC Supply voltage 2.4 2.5 2.6 V
VO Output voltage range SAFE VCC
SMBC, SMBD, VEN 5.5 V
ADREN, GPIO A, GPIO B, SDATA, SCLK, PWRM, LED1...5 (when used as GPO) VCC
VIN Input voltage range BAT, VAUX, SMBA 1 V
SMBD, SMBC, ALERT, DISP, PRES, KEYIN 5.5
SDATA, GPIO A, GPIO B, LED1...5 (when used as GPI) VCC
TOPR Operating Temperature –40 85 °C

8.4 Thermal Information

THERMAL METRIC(1) bq78350 UNIT
TSSOP (DBT) QFN (RSM)
30 PINS 32 PINS
RJA, High K Junction-to-ambient thermal resistance(2) 81.4 37.4 °C/W
RJC(top) Junction-to-case(top) thermal resistance(3) 16.2 30.6
RJB Junction-to-board thermal resistance(4) 34.1 7.7
ψJT Junction-to-top characterization parameter(5) 0.4 0.4
ψJB Junction-to-board characterization parameter(6) 33.6 7.5
RθJC(bottom) Junction-to-case(bottom) thermal resistance(7) n/a 2.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.

8.5 Electrical Characteristics: Supply Current

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Operating mode current No flash programming 650(1) μA
I(SLEEP) Low-power storage mode current SLEEP mode 300(2) μA
I(SHUTDOWN) Low-power SHUTDOWN mode current SHUTDOWN mode 0.1 1 μA
(1) The actual current consumption of this mode fluctuates during operation over a 1-s period. The value shown is an average using the default data flash configuration.
(2) The actual current consumption of this mode fluctuates during operation over a user-configurable period. The value shown is an average using the default data flash configuration.

8.6 Electrical Characteristics: I/O

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOL Output voltage low SMBC, SMBD, SDATA, SCLK, SAFE, ADREN, VEN, GPIO A, GPIO B, PWRM IOL = 0.5 mA 0.4 V
Output voltage low LED1, LED2, LED3, LED4, LED5 IOL = 3 mA 0.4
VOH Output voltage high SMBC, SMBD, SDATA, SCLK, SAFE, ADREN, VEN, GPIO A, GPIO B, PWRM IOH = –1 mA VCC – 0.5 V
VIL Input voltage low SMBC, SMBD, SDATA, SCLK, ALERT, DISP, SMBA, GPIO A, GPIO B, PRES, KEYIN –0.3 0.8 V
VIH Input voltage high SMBC, SMBD, SDATA, SCLK, ALERT, SMBA, GPIO A, GPIO B 2 6 V
Input voltage high DISP, PRES, KEYIN 2 VCC + 0.3 V
CIN Input capacitance 5 pF
ILKG Input leakage current 1 µA

8.7 Electrical Characteristics: ADC

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range BAT, VAUX –0.2 1 V
Conversion time 31.5 ms
Resolution (no missing codes) 16 bits
Effective resolution 14 15 bits
Integral nonlinearity ±0.03% FSR(1)
Offset error(2) 140 250 µV
Offset error drift(2) TA = 25°C to 85°C 2.5 18 V/°C
Full-scale error(3) ±0.1% ±0.7%
Full-scale error drift 50 PPM/°C
Effective input resistance(4) 8 MΩ
(1) Full-scale reference
(2) Post-calibration performance and no I/O changes during conversion with SRN as the ground reference
(3) Uncalibrated performance. This gain error can be eliminated with external calibration.
(4) The A/D input is a switched-capacitor input. Since the input is switched, the effective input resistance is a measure of the average resistance.

8.8 Electrical Characteristics: Power-On Reset

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIT– Negative-going voltage input 1.7 1.8 1.9 V
VHYS Power-on reset hysteresis 50 125 200 mV

8.9 Electrical Characteristics: Oscillator

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f(OSC) Operating frequency 4.194 MHz
f(EIO) Frequency error(1)(2) –3% 0.25% 3%
TA = 20°C to 70°C –2 0.25 2
t(SXO) Start-up time(3) 2.5 5 ms
LOW FREQUENCY OSCILLATOR
f(LOSC) Operating frequency 32.768 kHz
f(LEIO) Frequency error(2)(4) –2.5% 0.25% 2.5%
TA = 20°C to 70°C –1.5 0.25 1.5
t(LSXO) Start-up time(5) 500 ms
(1) The frequency error is measured from 4.194 MHz.
(2) The frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, TA = 25°C.
(3) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
(4) The frequency error is measured from 32.768 kHz.
(5) The start-up time is defined as the time it takes for the oscillator output frequency to be ±3%.

8.10 Electrical Characteristics: Data Flash Memory

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tDR Data retention See note(1) 10 Years
Flash programming write-cycles See note(1) 20,000 Cycles
t(WORDPROG) Word programming time See note(1) 2 ms
I(DDdPROG) Flash-write supply current See note(1) 5 10 mA
(1) Specified by design. Not production tested.

8.11 Electrical Characteristics: Register Backup

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
I(RB) RB data-retention input current V(RB) > V(RBMIN), VCC < VIT– 1500 nA
V(RB) > V(RBMIN), VCC < VIT–, TA = 0°C to 50°C 40 160
V(RB) RB data-retention voltage (1) 1.7 V

8.12 SMBus Timing Specifications

VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSMB SMBus operating frequency SLAVE mode, SMBC 50% duty cycle 10 100 kHz
fMAS SMBus master clock frequency MASTER mode, no clock low slave extend 51.2
tBUF Bus free time between start and stop 4.7 ms
tHD:STA Hold time after (repeated) start 4
tSU:STA Repeated start setup time 4.7
tSU:STO Stop setup time 4
tHD:DAT Data hold time RECEIVE mode 0 ns
TRANSMIT mode 300
tSU:DAT Data setup time 250
tTIMEOUT Error signal/detect See note(1) 25 35 ms
tLOW Clock low period 4.7 µs
tHIGH Clock high period See note(2) 4 50
tLOW:SEXT Cumulative clock low slave extend time See note(3) 25 ms
tLOW:MEXT Cumulative clock low master extend time See note(4) 10
tF Clock/data fall time (VILMAX – 0.15 V) to (VIHMIN + 0.15 V) 300 ns
tR Clock/data rise time 0.9 VCC to (VILMAX – 0.15 V) 1000
(1) The bq78350 times out when any clock low exceeds tTIMEOUT.
(2) tHIGH:MAX is minimum bus idle time. SMBC = 1 for t > 50 μs causes a reset of any transaction in progress involving the bq78350.
(3) tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to stop.
(4) tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to stop.
SBSTiming.gifFigure 1. SMBus Timing Diagram

8.13 Typical Characteristics

C001_SLUSB48.png
Figure 2. Internal Voltage Reference
C003_SLUSB48.png
Figure 4. LED Sink Current
C005_SLUSB48.png
Figure 6. HFO Frequency
C002_SLUSB48.png
Figure 3. ADC Offset Error
C004_SLUSB48.png
Figure 5. LFO Frequency