SLPS521 December 2014 CSD85301Q2
PRODUCTION DATA.
The CSD85301Q2 is a 20 V, 23 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half bridge configuration for synchronous buck and other power supply applications. Additionally, this part can be used for adaptor, USB input protection and battery charging applications. The dual FETs feature low drain to source on-resistance that minimizes losses and offers low component count for space constrained applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 20 | V | |
Qg | Gate Charge Total (4.5 V) | 4.2 | nC | |
Qgd | Gate Charge Gate to Drain | 1.0 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 1.8 V | 65 | mΩ |
VGS = 2.5 V | 33 | mΩ | ||
VGS = 3.8 V | 25 | mΩ | ||
VGS = 4.5 V | 23 | mΩ | ||
VGS(th) | Threshold Voltage | 0.9 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD85301Q2 | 7-Inch Reel | 3000 | SON 2 x 2 mm Plastic Package |
Tape and Reel |
CSD85301Q2T | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 20 | V |
VGS | Gate-to-Source Voltage | ±10 | V |
ID | Continuous Drain Current (Package limited) | 5.0 | A |
IDM | Pulsed Drain Current(1) | 26 | A |
PD | Power Dissipation(2) | 2.3 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 8.7 A, L = 0.1 mH, RG = 25 Ω |
3.8 | mJ |
RDS(on) vs VGS |
Gate Charge |