ZHCSHF4J May   2004  – January 2018 TPS51116

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1. 3.1 典型应用
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Dissipation Ratings
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VDDQ SMPS, Light Load Condition
      2. 7.3.2  Low-Side Driver
      3. 7.3.3  High-Side Driver
      4. 7.3.4  Current Sensing Scheme
      5. 7.3.5  PWM Frequency and Adaptive On-Time Control
      6. 7.3.6  VDDQ Output Voltage Selection
      7. 7.3.7  VTT Linear Regulator and VTTREF
      8. 7.3.8  Controling Outputs Using the S3 and S5 Pins
      9. 7.3.9  Soft-Start Function and Powergood Status
      10. 7.3.10 VDDQ and VTT Discharge Control
      11. 7.3.11 Current Protection for VDDQ
      12. 7.3.12 Current Protection for VTT
      13. 7.3.13 Overvoltage and Undervoltage Protection for VDDQ
      14. 7.3.14 Undervoltage Lockout (UVLO) Protection, V5IN (PWP), V5FILT (RGE)
      15. 7.3.15 Input Capacitor, V5IN (PWP), V5FILT (RGE)
      16. 7.3.16 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 VDDQ SMPS, Dual PWM Operation Modes
      2. 7.4.2 Current Mode Operation
      3. 7.4.3 D-CAP™ Mode Operation
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 DDR3 Application With Current Mode
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Pin Connections
        2. 8.2.2.2 Choose the inductor
        3. 8.2.2.3 Choose rectifying (low-side) MOSFET
        4. 8.2.2.4 Choose output capacitance
        5. 8.2.2.5 Determine f0 and calculate RC
        6. 8.2.2.6 Calculate CC2
        7. 8.2.2.7 Calculate CC.
        8. 8.2.2.8 Determine the value of R1 and R2.
      3. 8.2.3 Application Curves
    3. 8.3 DDR3 Application With D−CAP™ Mode
      1. 8.3.1 Design Requirements
      2. 8.3.2 Detailed Design Procedure
        1. 8.3.2.1 Pin Connections
        2. 8.3.2.2 Choose the Components
      3. 8.3.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 接收文档更新通知
    2. 11.2 社区资源
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 Glossary
  12. 12机械、封装和可订购信息

特性

  • 同步降压控制器 (VDDQ)
    • 宽输入电压范围: 3.0V 至 28V
    • 负载阶跃响应为 100ns 的 D−CAP™ 模式
    • 电流模式选项支持陶瓷输出电容器
    • 支持 S4/S5 状态内的软关闭
    • 利用RDS(on) 或电阻器进行电流检测
    • 2.5V (DDR)、1.8V (DDR2),可调节至
      1.5V (DDR3)、1.35V (DDR3L)、1.2V(LPDDR3 和 DDR4)或
      输出范围 0.75V 至 3.0V
    • 配备有电源正常、过压保护和欠压保护
  • 3A LDO (VTT),经缓冲基准 (VREF)
    • 拉电流和灌电流的能力达到 3A
    • 提供 LDO 输入以优化功率损耗
    • 只需 20μF 陶瓷输出电容器
    • 经缓冲的低噪声 10mA VREF 输出
    • 针对 VREF 和 VTT 的 ±20mV 精度
    • 在 S3 中支持高阻抗 (high-Z),在 S4/S5 中支持软关闭
    • 热关断