ZHCSAT4D December 2012 – April 2017 TPD4E1U06
PRODUCTION DATA.
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±4000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1500 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact ESD | ±15000 | V |
IEC 61000-4-2 air-gap ESD | ±15000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | 0 | 5.5 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD4E1U06 | UNIT | ||
---|---|---|---|---|
DBV (SOT-23) | DCK (SC-70) | |||
6 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 224.3 | 274.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 166.1 | 113.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 68.4 | 76.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 57.3 | 3.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 67.9 | 75.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO = 10 µA | 5.5 | V | |||
VCLAMP | Clamp voltage with ESD strike | IPP = 1 A, tp = 8/20 μs, from I/O to GND(1) | 11 | V | |||
IPP = 3 A, tp = 8/20 μs, from I/O to GND(1) | 15 | V | |||||
RDYN | Dynamic resistance | Pin x to GND pin(2) | 1.0 | Ω | |||
GND to pin x | 0.6 | ||||||
CL | Line capacitance | f = 1 MHz, VBIAS = 2.5 V, 25°C | 0.8 | 1 | pF | ||
CCROSS | Channel to channel input capacitance | Pin 2 = 0 V, f = 1 MHz, VBIAS = 2.5 V, between channel pins | DCK package | 0.006 | 0.015 | pF | |
DBV package | 0.01 | 0.025 | |||||
∆CIO-TO-GND | Variation of channel input capacitance | Pin 2 = 0 V , f = 1 MHz, VBIAS = 2.5 V, channel_x pin to ground – channel_y pin to ground | 0.025 | 0.07 | pF | ||
VBR | Break-down voltage, IO to GND | IIO = 1 mA | 6.5 | 8.5 | V | ||
ILEAK | Leakage current | VIO = 2.5 V | 1 | 10 | nA |