SLLS413L February   2000  – June 2017 TUSB2046B , TUSB2046I

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      USB-Tiered Configuration Example
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Differential Driver Switching Characteristics (Full Speed Mode)
    7. 7.7 Differential Driver Switching Characteristics (Low Speed Mode)
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 USB Power Management
      2. 8.3.2 Clock Generation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Vendor ID and Product ID With External Serial EEPROM
    5. 8.5 Programming
      1. Table 1. EEPROM Memory Map
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
    1. 10.1 TUSB2046x Power Supply
    2. 10.2 Downstream Port Power
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Placement
      2. 11.1.2 Differential Pairs
      3. 11.1.3 Ground
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –0.5 3.6 V
VI Input voltage range –0.5 VCC + 0.5 V
VO Output voltage range –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 V or VI < VCC ±20 mA
IOK Output clamp current VO < 0 V or VO < VCC ±20 mA
TA Operating free-air temperature TUSB2046B 0 70 °C
TUSB2046BI, TUSB2046I –40 85
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage levels are with respect to GND.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

PARAMETER MIN NOM MAX UNIT
VCC Supply voltage TUSB2046B 3 3.3 3.6 V
TUSB2046BI, TUSB2046I 3.3 3.6
VI Input voltage, TTL/LVCMOS 0 VCC V
VO Output voltage, TTL/LVCMOS 0 VCC V
VIH(REC) High-level input voltage, signal-ended receiver 2 VCC V
VIL(REC) Low-level input voltage, signal-ended receiver 0.8 V
VIH(TTL) High-level input voltage, TTL/LVCMOS 2 VCC V
VIL(TTL) Low-level input voltage, TTL/LVCMOS 0 0.8 V
TA Operating free-air temperature TUSB2046B 0 70 °C
TUSB2046BI, TUSB2046I –40 85
R(DRV) External series, differential driver resistor 22 (–5%) 22 (5%) Ω
f(OPRH) Operating (dc differential driver) high speed mode 12 Mb/s
f(OPRL) Operating (dc differential driver) low speed mode 1.5 Mb/s
VICR Common mode, input range, differential receiver 0.8 2.5 V
tt Input transition times, TTL/LVCMOS 0 25 ns
TJ Junction temperature range –40 115 °C

7.4 Thermal Information

THERMAL METRIC(1) TUSB2046x UNIT
RHB (VQFN)
32 PINS
RθJA Junction-to-ambient thermal resistance 35.7 °C/W
RθJCtop Junction-to-case (top) thermal resistance 28.4 °C/W
RθJB Junction-to-board thermal resistance 9.9 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 9.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

over recommended ranges of operating free-air temperature and supply voltage (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
VOH High-level output voltage TTL/LVCMOS IOH = –4 mA VCC  – 0.5 V
USB data lines R(DRV) = 15 kΩ to GND 2.8
IOH = –12 mA (without R(DRV)) VCC  – 0.5
VOL Low-level output voltage TTL/LVCMOS IOL = 4 mA 0.5 V
USB data lines R(DRV) = 1.5 kΩ to 3.6 V 0.3
IOL = 12 mA (without R(DRV)) 0.5
VIT+ Positive input threshold TTL/LVCMOS 1.8 V
Single-ended 0.8 V ≤ VICR ≤ 2.5 V 1.8
VIT– Negative-input threshold TTL/LVCMOS 0.8 V
Single-ended 0.8 V ≤ VICR ≤ 2.5 V 1
Vhys Input hysteresis(1)
(VT+ – VT–)		 TTL/LVCMOS 0.3 0.7 mV
Single-ended 0.8 V ≤ VICR ≤ 2.5 V 300 500
IOZ High-impedance output current TTL/LVCMOS V = VCC or GND(2) ±10 μA
USB data lines 0 V ≤ VO ≤ VCC ±10
IIL Low-level input current TTL/LVCMOS VI = GND –1 μA
IIH High-level input current TTL/LVCMOS VI = VCC 1 μA
z0(DRV) Driver output impedance USB data lines Static VOH or VOL 7.1 19.9 Ω
VID Differential input voltage USB data lines 0.8 V ≤ VICR ≤ 2.5 V 0.2 V
ICC Input supply current Normal operation 40 mA
Suspend mode 1 μA
(1) Applies for input buffers with hysteresis.
(2) Applies for open-drain buffers.

7.6 Differential Driver Switching Characteristics (Full Speed Mode)

over recommended ranges of operating free-air temperature and supply voltage, CL = 50 pF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
tr Transition rise time for DP or DM See Figure 1 and Figure 2 4 20 ns
tf Transition fall time for DP or DM See Figure 1 and Figure 2 4 20 ns
t(RFM) Rise/fall time matching(1) (tr/tf) × 100 90% 110%
VO(CRS) Signal crossover output voltage(1) 1.3 2.0 V
(1) Characterized only. Limits are approved by design and are not production tested.

7.7 Differential Driver Switching Characteristics (Low Speed Mode)

over recommended ranges of operating free-air temperature and supply voltage, CL = 50 pF (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN MAX UNIT
tr Transition rise time for DP or DM(1) CL = 200 pF to 600 pF, See Figure 1 and Figure 2 75 300 ns
tf Transition fall time for DP or DM(1) CL = 200 pF to 600 pF, See Figure 1 and Figure 2 75 300 ns
t(RFM) Rise/fall time matching(1) (tr/tf) × 100 80% 120%
VO(CRS) Signal crossover output voltage(1) CL = 200 pF to 600 pF 1.3 2.0 V
(1) Characterized only. Limits are approved by design and are not production tested.
TUSB2046B TUSB2046I diffswitchld_lls413.gif Figure 1. Differential Driver Switching Load
TUSB2046B TUSB2046I difftimwv_lls413.gif Figure 2. Differential Driver Timing Waveforms
TUSB2046B TUSB2046I paramdef_lls413.gif Figure 3. Single-Ended Receiver Input Signal Parameter Definitions

7.8 Typical Characteristics

TUSB2046B TUSB2046I diffreceive_lls413.gif Figure 4. Differential Receiver Input Sensitivity vs Common Mode Input Range