ZHCSGS1A September   2017  – September 2017 TS5USBC400

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化电路原理图
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dynamic Characteristics
    7. 6.7 Timing Requirements
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Powered-off Protection
      2. 8.3.2 Overvoltage Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Pin Functions
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • YFP|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

TA = –40°C to +85°C (Industrial), TA = 0℃ to 70℃ (Standard), VCC = 2.3 V to 5.5 V, GND = 0V, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
SUPPLY
VCC Power supply voltage 2.3 5.5 V
ICC Active supply current OE = 0 V
SEL1, SEL2 = 0 V, 1.8 V or VCC
0 V < VI/O < 3.6 V		 72 100 µA
Supply current during OVP condition OE = 0 V
SEL1, SEL2 = 0 V, 1.8 V or VCC
VI/O > VPOS_THLD 		80 120 µA
ICC_PD Standby powered down supply current OE = 1.8 V or VCC
SEL1 = 0 V, 1.8 V, or VCC
SEL2 = 0 V, 1.8 V, or VCC		 2.2 10 µA
DC Characteristics
RON ON-state resistance VI/O = 0.4 V
ISINK = 8 mA
Refer to ON-State Resistance Figure		 5.6 9 Ω
ΔRON ON-state resistance match between channels VI/O = 0.4 V
ISINK = 8 mA
Refer to ON-State Resistance Figure		 0.07 0.3 Ω
RON (FLAT)  ON-state resistance flatness VI/O = 0 V to 0.4 V
ISINK = 8 mA
Refer to ON-State Resistance Figure		 0.07 0.4 Ω
IOFF I/O pin OFF leakage current VD± = 0 V or 3.6 V
VCC = 2.3 V to 5.5 V
VD1±or VD2+/- = 3.6 V or 0 V
Refer to Off Leakage Figure		 -1 1.2 6 µA
VD± = 0 V or 16  V
VCC = 2.3 V to 5.5 V
VD1± or VD2+/- = 0 V
Refer to Off Leakage Figure		 -1 165 200 µA
ION ON leakage current VD± = 0 V or 3.6 V
VD1± and VD2+/- = high-Z
Refer to On Leakage Figure		 -1 1.2 6 µA
Digital Characteristics
VIH Input logic high SEL1, SEL2, OE 1.4 V
VIL Input logic low SEL1, SEL2, OE 0.5 V
VOL Output logic low FLT
IOL = 3 mA		 0.4 V
IIH Input high leakage current SEL1, SEL2, OE = 1.8 V, VCC -1 1 5 μA
IIL Input low leakage current SEL1, SEL2, OE = 0 V -1 ±0.2 5 μA
RPD Internal pull-down resistor on digital input pins 6 MΩ
CI Digital input capacitance SEL1, SEL2 = 0 V, 1.8 V or VCC
f = 1 MHz		 3.4 pF
Protection
VOVP_TH OVP positive threshold 4.5 4.8 5.2 V
VOVP_HYST OVP threshold hysteresis 75 230 425 mV
VCLAMP_V Maximum voltage to appear on D1± and D2± pins during OVP scenario VD± = 0 to 18 V
tRISE and tFALL(10% to 90 %) = 100 ns
RL = Open
Switch on or off
OE = 0 V		 0 9.6 V
VD± = 0 to 18 V
tRISE and tFALL(10% to 90 %) = 100 ns
RL = 50Ω
Switch on or off
OE = 0 V		 0 9.0 V
tEN_OVP OVP enable time RPU = 10 kΩ to VCC (FLT)
CL = 35 pF
Refer to OVP Timing Diagram Figure		 0.6 3 μs
tREC_OVP OVP recovery time RPU = 10 kΩ to VCC (FLT)
CL = 35 pF
Refer to OVP Timing Diagram Figure		 1.5 5 μs