SCDS285B March   2009  – August 2016 TS5A21366

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 1.8-V Compatible Control Input Threshold Independent of VCC
      2. 8.3.2 Isolation in Power-Down Mode, VCC = 0
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VCC Supply voltage(3) –0.5 6.5 V
VNO
VCOM		 Analog voltage(3)(4)(5) –0.5 VCC + 0.5 V
IK Analog port diode current VNO, VCOM < 0 –50 mA
INO
ICOM		 ON-state switch current VNO, VCOM = 0 to VCC –200 200 mA
ON-state peak switch current(6) –400 400
VI Digital input voltage(3)(4) –0.5 6.5 V
IIK Digital input clamp current VI < 0 –50 mA
ICC Continuous current through VCC 100 mA
IGND Continuous current through GND –100 100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration <10% duty cycle

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power supply voltage(1) 1.65 5.5 V
VNO
VCOM		 Analog signal voltage 0 VCC V
VIN Control input voltage 0 5.5 V
TA Ambient temperature –40 85 °C
(1) VCC needs to be supplied prior to the control input, see 1.8-V Compatible Control Input Threshold Independent of VCC.

6.4 Thermal Information

THERMAL METRIC(1) TS5A21366 UNIT
DCU (VSSOP) RSE (UQFN)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 211.3 168 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 83.8 71.9 °C/W
RθJB Junction-to-board thermal resistance 90.1 80.3 °C/W
ψJT Junction-to-top characterization parameter 9.2 9 °C/W
ψJB Junction-to-board characterization parameter 89.6 80.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics for 5-V Supply

VCC = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
rON ON-state resistance VNO = 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 4.5 V 0.75 1 Ω
Full 1.4
Δron ON-state resistance
match between
channels		 VNO = 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 4.5 V 0.04 0.1 Ω
Full 0.1
ron(flat) ON-state resistance
flatness		 VNO = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 4.5 V 0.15 0.25 Ω
Full 0.25
INO(OFF) NO OFF leakage current VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,		 Switch OFF,
See Figure 16		 25°C 5.5 V –10 1.4 10 nA
–235 235
INO(PWROFF) VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,		 Full 0 V –5 0.06 5 µA
–10 10
ICOM(OFF) COM OFF leakage current VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,		 Switch OFF,
See Figure 16		 25°C 5.5 V –10 1.4 10 nA
Full –235 235
ICOM(PWROFF) VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,		 25°C 0 V –5 0.06 5 µA
Full –10 10
INO(ON) NO ON leakage current VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,		 Switch ON,
See Figure 17		 25°C 5.5 V –5 1.33 5 nA
Full –50 50
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,		 Switch ON,
See Figure 17		 25°C 5.5 V –5 1.33 5 nA
Full –50 50
DIGITAL CONTROL INPUTS (IN1, IN2)(2)
VIH Input logic high Full 5.5 V 1.05 5.5 V
VIL Input logic low Full 5.5 V 0 0.6 V
IIH, IIL Input leakage current VI = 1.95 V or GND Full 5.5 V –0.6 0.6 µA
rIN Input resistance VI = 1.95 V Full 5.5 V 6 MΩ
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 50 Ω,		 CL= 35 pF,
See Figure 19		 25°C 5 V 39 49 72 ns
Full 4.5 V to
5.5 V		 28 97
tOFF Turnoff time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF,
See Figure 19		 25°C 5 V 168 243 318 ns
Full 4.5 V
5.5 V		 178 323
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 23		 25°C 5 V 1.3 pC
CNO(OFF) NO
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 5 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 5 V 17 pF
CNO(ON) NO
ON capacitance		 VNO = VCC or GND,
Switch ON,		 See Figure 18 25°C 5 V 33 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 18 25°C 5 V 33 pF
CI Digital input
capacitance		 VI = VCC or GND, See Figure 18 25°C 5 V 2.5 pF
PSRR Power supply rejection ratio f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω, 		CL = 15 pF,
See Figure 25		 25°C 5 V –84 dB
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 20 25°C 5 V 260 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 21		 25°C 5 V –62 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 Switch ON,
See Figure 22		 25°C 5 V –98 dB
THD+N Total harmonic
distortion		 RL = 600 Ω,
CL = 15 pF,		 f = 20 Hz to
20 kHz,
See Figure 24		 25°C 5 V 0.002%
SUPPLY
ICC Positive supply
current		 VI = 1.95 V or GND Switch ON or OFF 25°C 5.5 V 7.6 9 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs, (SCBA004).

6.6 Electrical Characteristics for 3.3-V Supply

VCC = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 3 V 1.1 1.5 Ω
Full 1.8
Δron ON-state resistance
match between
channels		 VNO = 2 V, 0.8 V
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 3 V 0.045 0.1 Ω
Full 0.1
ron(flat) ON-state resistance
flatness		 VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 Switch ON,
See Figure 15		 25°C 3 V 0.15 0.25 Ω
Full 0.25
INO(OFF) NO OFF
leakage current		 VNO = 1 V,
VCOM = 3 V, 1 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
See Figure 16		 25°C 3.6 V –5 0.9 5 nA
–160 160
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 Full 0 V –5 0.03 5 µA
–10 10
ICOM(OFF) COM OFF
leakage current		 VNO = 3 V,
VCOM = 1 V,
or
VNO = 1 V,
VCOM = 3 V,		 Switch OFF,
See Figure 16		 25°C 3.6 V –5 0.9 5 nA
Full –160 160
ICOM(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –5 0.03 5 µA
Full –10 10
INO(ON) NO ON leakage current VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
See Figure 17		 25°C 3.6 V –2 1 2 nA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 See Figure 17 25°C 3.6 V –2 1 2 nA
Full –20 20
DIGITAL CONTROL INPUTS (IN1, IN2)(2)
VIH Input logic high Full 3.6 V 1.05 5.5 V
VIL Input logic low Full 3.6 V 0 0.6 V
IIH, IIL Input leakage current VI = 1.95 V or GND Full 3.6 V –0.6 0.6 µA
rIN Input resistance VI = 1.95 V Full 3.6 V 6 MΩ
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 50 Ω,		 CL= 35 pF,
See Figure 19		 25°C 3.3 V 66 83 133 ns
Full 3 V to 3.6 V 43 178
tOFF Turnoff time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF,
See Figure 19		 25°C 3.3 V 138 247 306 ns
Full 3 V to 3.6 V 204 329
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 23		 25°C 3.3 V 1.3 pC
CNO(OFF) NO
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 3.3 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VCOM = VCC or GND,
Switch OFF,		 See Figure 18 25°C 3.3 V 17 pF
CNO(ON) NO
ON capacitance		 VNO = VCC or GND,
Switch ON,		 See Figure 18 25°C 3.3 V 30 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 18 25°C 3.3 V 30 pF
CI Digital input
capacitance		 VI = VCC or GND, See Figure 18 25°C 3.3 V 2.5 pF
PSRR Power supply rejection ratio f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω, 		CL = 15 pF,
See Figure 25		 25°C 3.3 V –84 dB
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 20 25°C 3.3 V 260 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 21		 25°C 3.3 V –62 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 Switch ON,
See Figure 22		 25°C 3.3 V –99 dB
THD+N Total harmonic
distortion		 RL = 600 Ω,
CL = 15 pF,		 f = 20 Hz to 20 kHz,
See Figure 24		 25°C 3.3 V 0.004%
SUPPLY
ICC Positive supply
current		 VI = 1.95 V or GND Switch ON or OFF 25°C 3.6 V 6.8 9 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs, (SCBA004).

6.7 Electrical Characteristics for 2.5-V Supply

VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO = 1.8 V,
ICOM = –8 mA,		 Switch ON,
See Figure 15		 25°C 2.3 V 1.2 2.1 Ω
Full 2.7
Δron ON-state resistance
match between
channels		 VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,		 Switch ON,
See Figure 15		 25°C 2.3 V 0.045 0.15 Ω
Full 0.15
ron(flat) ON-state resistance
flatness		 VNO = 1.8 V, 0.8 V,
ICOM = –8 mA,		 Switch ON,
See Figure 15		 25°C 2.3 V 0.4 0.6 Ω
Full 0.6
INO(OFF) NO OFF leakage current VNO = 0.5 V,
VCOM = 2.3 V,
or
VNO = 2.3 V,
VCOM = 0.5 V,		 Switch OFF,
See Figure 16		 25°C 2.7 V –8 0.7 8 nA
–136 136
INO(PWROFF) VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,		 Full 0 V –5 0.02 5 µA
–10 10
ICOM(OFF) COM OFF leakage current VNO = 2.3 V,
VCOM = 0.5 V,
or
VNO = 0.5 V,
VCOM = 2.3 V,		 Switch OFF,
See Figure 16		 25°C 2.7 V –8 0.7 8 nA
Full –136 136
ICOM(PWROFF) VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,		 25°C 0 V –5 0.02 5 µA
Full –10 10
INO(ON) NO ON leakage current VNO = 0.5 V,
VCOM = Open,
or
VNO = 2.3 V,
VCOM = Open,		 Switch ON,
See Figure 17		 25°C 2.7 V –2 0.3 2 nA
Full –15 15
ICOM(ON) COM
ON leakage current		 VCOM = 0.5 V,
VNO = Open,
or
VCOM = 2.3 V,
VNO = Open,		 Switch ON,
See Figure 17		 25°C 2.7 V –2 0.3 2 nA
Full –15 15
DIGITAL CONTROL INPUTS (IN1, IN2)(2)
VIH Input logic high Full 2.7 V 1.05 5.5 V
VIL Input logic low Full 2.7 V 0 0.6 V
IIH, IIL Input leakage current VI = 1.95 V or GND Full 2.7 V –0.6 0.6 µA
rIN Input resistance VI = 1.95 V Full 2.7 V 6 MΩ
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 50 Ω,		 CL= 35 pF,
See Figure 19		 25°C 2.5 V 101 137 222 ns
Full 2.3 V to 2.7 V 68 288
tOFF Turnoff time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF,
See Figure 19		 25°C 2.5 V 148 264 333 ns
Full 2.3 V to 2.7 V 197 367
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 23		 25°C 2.5 V 1.3 pC
CNO(OFF) NO
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 2.5 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 2.5 V 17 pF
CNO(ON) NO
ON capacitance		 VNO = VCC or GND,
Switch ON,		 See Figure 18 25°C 2.5 V 27.5 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 18 25°C 2.5 V 27.5 pF
CI Digital input
capacitance		 VI = VCC or GND, See Figure 18 25°C 2.5 V 2.5 pF
PSRR Power supply rejection ratio f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω, 		CL = 15 pF,
See Figure 25		 25°C 2.5 V –84 dB
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 20 25°C 2.5 V 260 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 21		 25°C 2.5 V –61 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 Switch ON,
See Figure 22		 25°C 2.5 V –99 dB
THD+N Total harmonic
distortion		 RL = 600 Ω,
CL = 15 pF,		 f = 20 Hz to 20 kHz,
See Figure 24		 25°C 2.5 V 0.011%
SUPPLY
ICC Positive supply
current		 VI = 1.95 V or GND Switch ON or OFF 25°C 2.7 V 6.6 9 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs, (SCBA004).

6.8 Electrical Characteristics for 1.8-V Supply

VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT
ANALOG SWITCH
ron ON-state resistance VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,		 Switch ON,
See Figure 15		 25°C 1.65 V 1.6 4 Ω
Full 5
Δron ON-state resistance
match between
channels		 VNO = 1.5 V,
ICOM = –2 mA,		 Switch ON,
See Figure 15		 25°C 1.65 V 0.045 0.2 Ω
Full 0.2
ron(flat) ON-state resistance
flatness		 VNO = 0.6 V, 1.5 V,
ICOM = –2 mA,		 Switch ON,
See Figure 15		 25°C 1.65 V 1.7 2.8 Ω
Full 3
INO(OFF) NO OFF leakage current VNO = 0.3 V,
VCOM = 1.65 V,
or
VNO = 1.65 V,
VCOM = 0.3 V,		 Switch OFF,
See Figure 16		 25°C 1.95 V –10 0.5 10 nA
–30 30
INO(PWROFF) VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,		 Full 0 V –5 0.02 5 µA
–10 10
ICOM(OFF) COM OFF leakage current VNO = 1.65 V,
VCOM = 0.3 V,
or
VNO = 0.3 V,
VCOM = 1.65 V,		 Switch OFF,
See Figure 16		 25°C 1.95 V –10 0.5 10 nA
Full –30 30
ICOM(PWROFF) VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,		 25°C 0 V –5 0.02 5 µA
Full –10 10
INO(ON) NO ON leakage current VNO = 0.3 V,
VCOM = Open,
or
VNO = 1.65 V,
VCOM = Open,		 Switch ON,
See Figure 17		 25°C 1.95 V –2 0.2 2 nA
Full –15 15
ICOM(ON) COM
ON leakage current		 VCOM = 0.3 V,
VNO = Open,
or
VCOM = 1.65 V,
VNO = Open,		 Switch ON,
See Figure 17		 25°C 1.95 V –2 0.2 2 nA
Full –15 15
DIGITAL CONTROL INPUTS (IN1, IN2)(2)
VIH Input logic high Full 1.95 V 1.05 5.5 V
VIL Input logic low Full 1.95 V 0 0.6 V
IIH, IIL Input leakage current VI = 1.95 V or GND Full 1.95 V –0.6 0.6 µA
rIN Input resistance VI = 1.95 V Full 1.95 V 6 MΩ
DYNAMIC
tON Turnon time VCOM = VCC,
RL = 50 Ω,		 CL= 35 pF,
See Figure 19		 25°C 1.8 V 198 297 448 ns
Full 1.65 V to 1.95 V 136 620
tOFF Turnoff time VCOM = VCC,
RL = 50 Ω,		 CL = 35 pF,
See Figure 19		 25°C 1.8 V 225 308 430 ns
Full 1.65 V to 1.95 V 204 514
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
See Figure 23		 25°C 1.8 V 1.4 pC
CNO(OFF) NO
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 1.8 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VNO = VCC or GND,
Switch OFF,		 See Figure 18 25°C 1.8 V 17 pF
CNC(ON), CNO(ON) NO
ON capacitance		 VNO = VCC or GND,
Switch ON,		 See Figure 18 25°C 1.8 V 27.5 pF
CCOM(ON) COM
ON capacitance		 VCOM = VCC or GND,
Switch ON,		 See Figure 18 25°C 1.8 V 27.5 pF
CI Digital input
capacitance		 VI = VCC or GND, See Figure 18 25°C 1.8 V 2.5 pF
PSRR Power supply rejection ratio f = 10 kHz,
VCOM = 1 Vrms,
RL = 50 Ω, 		CL = 15 pF,
See Figure 25		 25°C 1.8 V –78 dB
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 20 25°C 1.8 V 260 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
See Figure 21		 25°C 1.8 V –59 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 Switch ON,
See Figure 22		 25°C 1.8 V –101 dB
THD+N Total harmonic
distortion		 RL = 600 Ω,
CL = 15 pF,		 f = 20 Hz to 20 kHz,
See Figure 24		 25°C 1.8 V 0.001%
SUPPLY
ICC Positive supply
current		 VI = 1.95 V or GND Switch ON or OFF 25°C 1.95 V 3.6 9 µA
Full 10
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the TI application report, Implications of Slow or Floating CMOS Inputs, (SCBA004).

6.9 Typical Characteristics

TS5A21366 typ_ron_vcom_cds285.gif
Figure 1. rON vs VCOM
TS5A21366 typ_ron_vcom_33v_cds285.gif
VCC = 3.3 V
Figure 3. rON vs VCOM
TS5A21366 typ_leak_ta_cds285.gif
VCC = 5.5 V
Figure 5. Leakage Current vs Temperature
TS5A21366 typ_tonoff_ta_cds285.gif
VCC = 3.3 V
Figure 7. tON/tOFF vs Temperature
TS5A21366 typ_insloss_cds285.gif
Figure 9. Insertion Loss
TS5A21366 typ_xtalk_cds285.gif
Figure 11. Crosstalk
TS5A21366 typ_thd_cds285.gif
Figure 13. THD+N (%) vs Frequency
TS5A21366 typ_ron_vcom_5v_cds285.gif
VCC = 5 V
Figure 2. rON vs VCOM
TS5A21366 typ_suppcurr_ta_cds285.gif
VCC = 5 V
Figure 4. Power Supply Current vs Temperature
TS5A21366 typ_tonoff_v_cds285.gif
Figure 6. tON/tOFF vs Supply Voltage
TS5A21366 typ_involthres_cds285.gif
Figure 8. Input Voltage Thresholds
TS5A21366 typ_offiso_cds285.gif
Figure 10. OFF Isolation
TS5A21366 typ_qc_bias_cds285.gif
Figure 12. Charge Injection (QC) vs Bias Voltage
TS5A21366 typ_psrr_cds285.gif
Figure 14. Power Supply Rejection Ratio (PSRR)