ZHCSI87D December   2005  – May 2018 TS321

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
    1.     Pin Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: TS321
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Gain Bandwidth Product
      3. 7.3.3 Slew Rate
      4. 7.3.4 Input Common-Mode Range
      5. 7.3.5 Stability With High Capacitive Loads
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
      1. 11.1.1 相关文档
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 术语表

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Detailed Design Procedure

Determine the gain required by the inverting amplifier:

Equation 1. TS321 app_eq1.gif
Equation 2. TS321 app_eq2.gif

Once the desired gain is determined, select a value for RI or RF. Selecting a value in the kilohm range is desirable because the amplifier circuit uses currents in the milliamp range. This ensures the part does not draw too much current. This example selects 10 kΩ for RI which means 36 kΩ is be used for RF. This is determined by Equation 3.

Equation 3. TS321 app_eq3.gif