ZHCSCQ0 August   2014 TPS25921A , TPS25921L

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 应用电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Characteristics
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parametric Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Enable and Adjusting Undervoltage Lockout (UVLO)
      2. 9.3.2 Overvoltage Protection (OVP)
      3. 9.3.3 Hot Plug-in and In-Rush Current Control
      4. 9.3.4 Overload and Short Circuit Protection :
        1. 9.3.4.1 Overload Protection
        2. 9.3.4.2 Short Circuit Protection
        3. 9.3.4.3 Start-Up with Short on Output
        4. 9.3.4.4 Constant Current Limit Behavior during Overcurrent Faults
      5. 9.3.5 FAULT Response
      6. 9.3.6 IN, OUT and GND Pins
      7. 9.3.7 Thermal Shutdown:
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Control
      2. 9.4.2 Operational Overview of Device Functions
  10. 10Applications and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Precision Current Limiting and Protection for White Goods
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
          1. 10.2.1.2.1 Step by Step Design Procedure
          2. 10.2.1.2.2 Programming the Current-Limit Threshold: R(ILIM) Selection
          3. 10.2.1.2.3 Undervoltage Lockout and Overvoltage Set Point
          4. 10.2.1.2.4 Setting Output Voltage Ramp time (tSS)
            1. 10.2.1.2.4.1 Case1: Start-up Without Load: Only Output Capacitance C(OUT) Draws Current During Start-up
            2. 10.2.1.2.4.2 Case 2: Start-up With Load: Output Capacitance C(OUT) and Load Draws Current During Start-up
          5. 10.2.1.2.5 Support Component Selections - R4 and CIN
        3. 10.2.1.3 Application Curves
  11. 11System Examples
    1. 11.1 Protection and Current Limiting for Primary-Side Regulated Power Supplies
    2. 11.2 Precision Current Limiting in Intrinsic Safety Applications
    3. 11.3 Smart Load Switch
  12. 12Power Supply Recommendations
    1. 12.1 Transient Protection
    2. 12.2 Output Short-Circuit Measurements
  13. 13Layout
    1. 13.1 Layout Guidelines
    2. 13.2 Layout Example
  14. 14器件和文档支持
    1. 14.1 相关链接
    2. 14.2 Trademarks
    3. 14.3 Electrostatic Discharge Caution
    4. 14.4 术语表
  15. 15机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
VALUE(2) UNIT
MIN MAX
Input voltage range IN, OUT, ENUV, OVP, FLT –0.3 20 V
IN (10 ms Transient) 22
ILIM, SS –0.3 7
Sink current SS 5 mA
FLT 100 mA
Source current ILIM, SS, FLT Internally Limited
Maximum junction temperature, TJ Internally Limited °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential voltages, are with respect to network ground terminal.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range -65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –2 2 kV
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –0.5 0.5
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Input voltage range IN 4.5 18 V
OUT, OVP, ENUV, FLT 0 18
SS 0 6
ILIM 0 3.3
Resistance ILIM 35.7 95.3 158 kΩ
External capacitance OUT 0.1 1 µF
SS 1 1000 nF
Operating junction temperature range, TJ –40 25 125 °C

7.4 Thermal Characteristics(1)

THERMAL METRIC TPS2592xx UNIT
SOIC (8) PINS
RθJA Junction-to-ambient thermal resistance 120.8 °C/W
RθJCtop Junction-to-case (top) thermal resistance 65.5
RθJB Junction-to-board thermal resistance 51.8
ψJT Junction-to-top characterization parameter 17.4
ψJB Junction-to-board characterization parameter 61.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Conditions (unless otherwise noted) are –40°C ≤ TJ ≤ 125°C, 4.5 V ≤ V(IN) ≤ 18 V, V(ENUV) = 2 V, V(OVP) = 0 V, R(ILIM) = 95.3 kΩ, CSS = OPEN, FLT = OPEN. Positive current into terminals. All voltages are referenced to GND (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE AND INTERNAL UNDERVOLTAGE LOCKOUT
V(IN) Operating Input Voltage 4.5 18 V
V(UVR) UVLO Threshold, Rising 4.10 4.26 4.40 V
V(UVHys) UVLO Hysteresis 168 224 279 mV
IQ(ON) Supply Current, Enabled V(ENUV) = 2 V, V(IN) = 12 V 0.22 0.41 0.58 mA
IQ(OFF) Supply Current, Disabled V(ENUV) = 0 V, V(IN) = 12 V 0.08 0.132 0.20 mA
OVERVOLTAGE PROTECTION (OVP) INPUT
V(OVPR) Overvoltage Threshold Voltage, Rising 1.35 1.39 1.43 V
V(OVPF) Overvoltage Threshold Voltage, Falling 1.30 1.34 1.37 V
I(OVP) OVP Input Leakage Current 0V ≤ V(OVP) ≤ 18 V –100 0 100 nA
ENABLE AND UNDERVOLTAGE LOCKOUT (ENUV) INPUT
V(ENR) ENUV Threshold voltage, rising 1.36 1.39 1.42 V
V(ENF) ENUV Threshold voltage, falling 1.30 1.34 1.37 V
V(ENF_RST) ENUV Threshold voltage to reset thermal fault, falling 0.5 0.61 0.8 V
IEN EN Input leakage current 0 ≤ V(ENUV) ≤ 18 V –100 0 100 nA
SOFT START: OUTPUT RAMP CONTROL (SS)
I(SS) SS charging current V(SS) = 0 V 0.9 1.04 1.2 µA
R(SS) SS discharging resistance V(ENUV) = 0 V, I(SS) = 10 mA sinking 60 70 85 Ω
V(SSmax) SS maximum capacitor voltage 5.5 V
GAIN(SS) SS to OUT gain ΔV(OUT)/ΔV(SS) 4.81 4.86 4.92 V/V
CURRENT LIMIT PROGRAMMING (ILIM)
I(ILIM) ILIM Bias current 6 10 16 µA
ILIMIT Current Limit(2) R(ILIM) = 35.7 kΩ, (V(IN) - V(OUT)) = 1 V 0.284 0.368 0.452 A
R(ILIM) = 45.3 kΩ, (V(IN) - V(OUT)) = 1 V 0.394 0.471 0.547
R(ILIM) = 95.3 kΩ, (V(IN) - V(OUT)) = 1 V, TA = TJ= 25°C 0.98 1.0 1.02
R(ILIM) = 95.3 kΩ, (V(IN) - V(OUT)) = 1 V 0.93 1.0 1.062
R(ILIM) = 150 kΩ, (V(IN) - V(OUT)) = 1 V 1.43 1.57 1.7
R(ILIM) = SHORT, Shorted resistor current limit
R(ILIM) = OPEN, Open resistor current limit
(Single Point Failure Test: UL60950)		 0.12 0.257 0.406
IOS Short-circuit current limit(2) R(ILIM) = 35.7 kΩ, (V(IN) - V(OUT)) = 12 V 0.275 0.356 0.438 A
R(ILIM) = 45.3 kΩ, (V(IN) - V(OUT)) = 12 V 0.376 0.45 0.522
R(ILIM) = 95.3 kΩ, (V(IN) - V(OUT)) = 12 V 0.837 0.9 0.964
R(ILIM) = 150 kΩ, (V(IN) - V(OUT)) = 12 V 1.219 1.34 1.46
I(FASTRIP) Fast-Trip comparator threshold R(ILIM) in kΩ 0.0142 x R(ILIM) + 0.36 A
V(ILIMopen) ILIM Open resistor detect threshold V(ILIM) Rising, R(ILIM) = OPEN 2.81 3.0 3.25 V
MOSFET – POWER SWITCH
RDS(on)

FET ON resistance(1)

–40°C ≤ TJ ≤ 85°C 55 87 120 mΩ
–40°C ≤ TJ ≤ 125°C 55 87 135
PASS FET OUTPUT (OUT)
Ilkg(OUT) OUT Bias current in off state V(ENUV) = 0 V, V(OUT) = 0 V (Sourcing) –2 0 1 µA
Isink(OUT) V(ENUV) = 0V, V(OUT) = 300 mV (Sinking) 5 7 10
FAULT FLAG (FLT): ACTIVE LOW
R(FLT) FLT Pull down Resistance Device in fault condition, V(ENUV) = 0V, I(FLT) = 100mA 22 26 32 Ω
I(FLT) FLT Input Leakage Current Device not in fault condition, V(FLT) = 0V, 18V –0.5 0 0.5 µA
THERMAL SHUT DOWN (TSD)
T(TSD) TSD Threshold, rising(1) 155 °C
T(TSDhys) TSD Hysteresis(1) 20 °C
Thermal fault: Latched or Auto Retry TPS25921L LATCHED
TPS25921A AUTO-RETRY
(1) The limits for these parameters are specified based on design and characterization data, and are not tested during production.
(2) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.

7.6 Timing Requirements

Conditions (unless otherwise noted) are –40°C ≤ TJ ≤ 125°C, V(IN)= 12 V, V(ENUV) = 2 V, V(OVP) = 0 V, R(ILIM) = 95.3 kΩ, CSS = OPEN, FLT = OPEN. Positive current into terminals. All voltages are referenced to GND (unless otherwise noted). Refer to Figure 26 for the timing diagrams
MIN TYP MAX UNIT
ENABLE AND UNDERVOLTAGE LOCKOUT (ENUV) INPUT
tOFF(dly) Turn Off delay ENUV ↓ to V(OUT)↓ 8 µs
tON(dly) Turn-On delay ENUV ↑ to V(OUT) = 1V,
C(SS) = OPEN 		96 µs
ENUV ↑ to V(OUT) = 1V,
C(SS) > 0.39nF, [C(dVdT) in nF]		 14.5 + 0.5 x ( 70p + C(SS))
OVERVOLTAGE PROTECTION (OVP) INPUT
tOVP(dly) OVP Disable delay OVP↑ to V(OUT)↓ 8 µs
SOFT START: OUTPUT RAMP CONTROL (SS)
tSS Output ramp time ENUV ↑ to V(OUT) = 11.7 V, with C(SS) = open , C(OUT) = 2.2 µF 0.2 0.26 0.33 ms
ENUV ↑ to V(OUT) = 11.7 V, with C(SS) = 1 nF, C(OUT) = 2.2 µF 2.1 3 3.6
CURRENT LIMIT PROGRAMMING (ILIM)
tFASTRIP(dly) Fast-Trip comparator delay I(OUT) > I(FASTRIP) 3 µs
THERMAL SHUT DOWN (TSD)
tTSD(dly) Retry Delay after TSD recovery, TJ < [T(TSD) - 20oC] TPS25921A Only, V(IN) = 12 V 150 ms
TPS25921A Only, V(IN) = 4.5 V 100 ms

7.7 Typical Characteristics

Conditions (unless otherwise noted) are –40°C ≤ TJ ≤ 125°C, V(IN)= 12 V, V(ENUV) = 2 V, V(OVP) = 0 V, R(ILIM) = 95.3 kΩ, C(OUT) = 2.2 μF, CSS = OPEN, FLT = OPEN. Positive current into terminals. All voltages referenced to GND (unless otherwise noted). For all oscilloscope waveforms TA = 25°C.
D001_SLVSCE1.gifFigure 1. UVLO Threshold Voltage vs Temperature
D003_SLVSCE1.gifFigure 3. Input Supply Current vs Supply Voltage at Shutdown
D006_SLVSCE1.gif
Figure 5. EN Threshold Voltage to Reset Fault Latch vs Temperature
D008_SLVSCE1.gif
Figure 7. GAIN(SS) vs Temperature
D010_SLVSCE1.gif
C(SS) = Open
Figure 9. Output Ramp Time vs Temperature
D012_SLVSCE1.gif
Figure 11. Current Limit Accuracy vs Current Limit
D014_SLVSCE1.gif
PD = [V(IN)-V(OUT)]*ILIMIT
Figure 13. Current Limit Normalized (%) vs Power Dissipation in the Device PD
D016_SLVSCE1.gif
Figure 15. RDS(ON) vs Temperature
C01_StartUp_EN_Css_Open_Noload.png
C(SS) = Open C(OUT) = 4.7 nF
Figure 17. Turn ON with Enable
C03_EN_Turn_ON_Delay.png
R(FLT) = 100 kΩ
Figure 19. EN Turn ON Delay : EN ↑ to Output Ramp ↑
C05_OVP_Turn_OFF_Delay_12OhmLoad.png
RL = 12 Ω R(FLT) = 100 kΩ
Figure 21. OVP Turn OFF delay: OVP ↑ to Fault ↓
C07_Hot_Short_Fast Trip_Current Regulation.png
Figure 23. Hot-Short: Fast Trip Response and Current Regulation
D002_SLVSCE1.gifFigure 2. Input Supply Current vs Supply Voltage During Normal Operation
D004_SLVSCE1.gifFigure 4. ENUV and OVP Threshold Voltage vs Temperature
D007_SLVSCE1.gif
Figure 6. SS Pin Charging Current vs Temperature
D009_SLVSCE1.gif
Figure 8. Output Ramp Time vs C(SS)
D011_SLVSCE1.gif
Figure 10. Current Limit vs Current Limit Resistor
D013_SLVSCE1.gif
Figure 12. Current Limit vs Temperature Across R(ILIM)
D015_SLVSCE1.gif
Figure 14. Current Limit for R(ILIM) = Open and Short vs Temperature
C029_SLVSCE1.png
Taken on 1-Layer board, 2oz.(0.08-mm thick) with GND plane area: 14 cm2 (bottom)
Figure 16. Thermal Shutdown Time vs Power Dissipation
C02_StartUp_EN_Css_1nF_Noload.png
C(SS) = 1nF C(OUT) = 4.7 nF
Figure 18. Turn ON with Enable
C04_EN_Turn_OFF_Delay.png
R(FLT) = 100 kΩ
Figure 20. EN Turn OFF Delay : EN ↓ to Fault ↓
C06_OVP_Turn_ON_Delay_12OhmLoad.png
RL = 12 Ω R(FLT) = 100 kΩ
Figure 22. OVP Turn ON delay: OVP ↓ to Output Ramp ↑
C08_Hotshort-Fast Trip Response.png
Figure 24. Hot-Short: Fast Trip Response (Zoomed)