ZHCSEX3A February   2016  – March  2016 TPS22918

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
      1. 6.7.1 DC Characteristics
      2. 6.7.2 AC Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 On and Off Control
      2. 8.3.2 Quick Output Discharge (QOD)
        1. 8.3.2.1 QOD when System Power is Removed
        2. 8.3.2.2 Internal QOD Considerations
      3. 8.3.3 Adjustable Rise Time (CT)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Capacitor (CIN)
        2. 9.2.2.2 Output Capacitor (CL) (Optional)
        3. 9.2.2.3 Shutdown Sequencing During Unexpected System Power Loss
        4. 9.2.2.4 VIN to VOUT Voltage Drop
        5. 9.2.2.5 Inrush Current
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12器件和文档支持
    1. 12.1 器件支持
      1. 12.1.1 开发支持
    2. 12.2 文档支持
      1. 12.2.1 相关文档　
    3. 12.3 社区资源
    4. 12.4 商标
    5. 12.5 静电放电警告
    6. 12.6 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VON ON voltage –0.3 6 V
IMAX Maximum continuous switch current, ambient temperature = 70°C 2 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 2.5 A
TJ Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 0 5.5 V
VON ON voltage 0 5.5 V
VOUT Output voltage VIN V
VIH, ON High-level input voltage, ON VIN = 1 V to 5.5 V 1 5.5 V
VIL, ON Low-level input voltage, ON VIN = 1 V to 5.5 V 0 0.5 V
TA Operating free-air temperature range (1) –40 105 °C
CIN Input Capacitor 1 (2) µF
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(MAX)], the maximum power dissipation of the device in the application [PD(MAX)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA(MAX) = TJ(MAX) – (θJA × PD(MAX)).
(2) Refer to Application and Implementation section

6.4 Thermal Information

THERMAL METRIC (1) TPS22918 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 183.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 151.6 °C/W
RθJB Junction-to-board thermal resistance 34.1 °C/W
ψJT Junction-to-top characterization parameter 37.2 °C/W
ψJB Junction-to-board characterization parameter 33.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Unless otherwise noted, the specification in the following table applies over the full ambient operating temperature
–40°C ≤ TA ≤ +105°C. Typical values are for TA = 25°C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
IQ, VIN Quiescent current VON = 5 V, IOUT = 0 A VIN = 5.5 V –40°C to +105°C 9.2 16 µA
VIN = 5 V 8.7 16
VIN = 3.3 V 8.3 15
VIN = 1.8 V 10.2 17
VIN = 1.2 V 9.3 16
VIN = 1 V 8.9 15
ISD, VIN Shutdown current VON = 0 V, VOUT = 0 V VIN = 5.5 V –40°C to +105°C 0.5 5 µA
VIN = 5 V 0.5 4.5
VIN = 3.3 V 0.5 3.5
VIN = 1.8 V 0.5 2.5
VIN = 1.2 V 0.4 2
VIN = 1 V 0.4 2
ION ON pin input leakage current VIN = 5.5 V, IOUT = 0 A –40°C to +105°C 0.1 µA
RON On-Resistance VIN = 5.5 V, IOUT = –200 mA 25°C 51 59 mΩ
–40°C to +85°C 71
–40°C to +105°C 78
VIN = 5.0 V, IOUT = –200 mA 25°C 52 59 mΩ
–40°C to +85°C 71
–40°C to +105°C 79
VIN = 4.2 V, IOUT = –200 mA 25°C 52 59 mΩ
–40°C to +85°C 71
–40°C to +105°C 79
VIN = 3.3 V, IOUT = –200 mA 25°C 53 59 mΩ
–40°C to +85°C 71
–40°C to +105°C 80
VIN = 2.5 V, IOUT = –200 mA 25°C 53 61 mΩ
–40°C to +85°C 75
–40°C to +105°C 80
VIN = 1.8 V, IOUT = –200 mA 25°C 55 65 mΩ
–40°C to +85°C 79
–40°C to +105°C 88
VIN = 1.2 V, IOUT = –200 mA 25°C 64 77 mΩ
–40°C to +85°C 88
–40°C to +105°C 104
VIN = 1.0 V, IOUT = –200 mA 25°C 71 85 mΩ
–40°C to +85°C 100
–40°C to +105°C 116
VHYS ON pin hysteresis VIN = 1 V to 5.5 V –40°C to +105°C 107 mV
RPD Output pull down resistance(1) VIN = 5.0 V, VON = 0 V 25°C 24 Ω
–40°C to +105°C 30
VIN = 3.3 V, VON = 0 V 25°C 25
–40°C to +105°C 35
VIN = 1.8 V, VON = 0 V 25°C 45
–40°C to +105°C 60
(1) Output pull down resistance varies with input voltage. Please see Figure 7 for more information.

6.6 Switching Characteristics

Refer to the timing test circuit in Figure 21 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where VIN is already in steady state condition before the ON pin is asserted high. VON = 5 V, TA = 25 °C, QOD = Open.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN = 5 V
tON Turn-on time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 1950 µs
tOFF Turn-off time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tR VOUT rise time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2540
tF VOUT fall time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tD Delay time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 690
VIN = 3.3 V
tON Turn-on time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 1430 µs
tOFF Turn-off time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tR VOUT rise time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 1680
tF VOUT fall time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tD Delay time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 590
VIN = 1.8 V
tON Turn-on time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 965 µs
tOFF Turn-off time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tR VOUT rise time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 960
tF VOUT fall time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tD Delay time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 480
VIN = 1 V
tON Turn-on time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 725 µs
tOFF Turn-off time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 3
tR VOUT rise time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 560
tF VOUT fall time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 2
tD Delay time RL = 10 Ω, CIN = 1 µF, CL = 0.1 µF, CT = 1000 pF 430

6.7 Typical Characteristics

6.7.1 DC Characteristics

TPS22918 D002_SLVSD76.gif
VON = 5 V IOUT = 0 A
Figure 1. IQ vs VIN
TPS22918 D004_SLVSD76.gif
VON = 5 V IOUT = –200 mA
Figure 3. RON vs TJ
TPS22918 D005_SLVSD76.gif
VON = 5 V TA = 25°C
Figure 5. RON vs IOUT
TPS22918 D009_SLVSD76.gif
VIN = VOUT VON = 0 V
Figure 7. RPD vs VIN
TPS22918 D003_SLVSD76.gif
VON = 0 V IOUT = 0 A
Figure 2. ISD vs VIN
TPS22918 D001_SLVSD76.gif
VON = 5 V IOUT = –200 mA
Figure 4. RON vs VIN
TPS22918 D008_SLVSD76.gif
IOUT = 0 A
Figure 6. VHYS vs VIN

6.7.2 AC Characteristics

TPS22918 D010_SLVSD76.gif
CIN = 1 µF RL = 10 Ω CL = 0.1 µF
CT = 1000pF
Figure 8. tR vs VIN
TPS22918 D012_SLVSD76.gif
CIN = 1 µF RL = 10 Ω CL = 0.1 µF QOD = Open
Figure 10. tF vs VIN
TPS22918 D014_SLVSD76.gif
CIN = 1 µF RL = 10 Ω CL = 0.1 µF
CT = 1000 pF
Figure 12. tON vs VIN
TPS22918 D011_SLVSD76.gif
CIN = 1 µF RL = 10 Ω CL = 0.1 µF
Figure 9. tD vs VIN
TPS22918 D013_SLVSD76.gif
CIN = 1 µF RL = 10 Ω CL = 0.1 µF
Figure 11. tOFF vs VIN
TPS22918 918_On Time_VIN=5V_CT=1000pF.png
VIN = 5 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω CT = 1000 pF
Figure 13. tR at VIN = 5 V
TPS22918 918_On Time_VIN=3.3V_CT=1000pF.png
VIN = 3.3 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω CT = 1000 pF
Figure 15. tR at VIN = 3.3 V
TPS22918 918_On Time_VIN=1.8V_CT=1000pF.png
VIN = 1.8 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω CT = 1000 pF
Figure 17. tR at VIN = 1.8 V
TPS22918 918_On Time_VIN=1V_CT=1000pF.png
VIN = 1.0 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω CT = 1000 pF
Figure 19. tR at VIN = 1.0 V
TPS22918 918_Off Time_VIN=5V_CT=1000pF.png
VIN = 5 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω QOD = Open
Figure 14. tF at VIN = 5 V
TPS22918 918_Off Time_VIN=3.3V_CT=1000pF.png
VIN = 3.3 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω QOD = Open
Figure 16. tF at VIN = 3.3 V
TPS22918 918_Off Time_VIN=1.8V_CT=1000pF.png
VIN = 1.8 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω QOD = Open
Figure 18. tF at VIN = 1.8 V
TPS22918 918_Off Time_VIN=1V_CT=1000pF.png
VIN = 1.0 V CIN = 1 µF CL = 0.1 µF
RL = 10 Ω QOD = Open
Figure 20. tF at VIN = 1.0 V