SLVS568D January   2005  – April 2016 TLV341 , TLV341A , TLV342 , TLV342S

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information: TLV341
    5. 6.5  Thermal Information: TLV342
    6. 6.6  Thermal Information: TLV342S
    7. 6.7  Electrical Characteristics: V+ = 1.8 V
    8. 6.8  Electrical Characteristics: V+ = 5 V
    9. 6.9  Shutdown Characteristics: V+ = 1.8 V
    10. 6.10 Shutdown Characteristics: V+ = 5 V
    11. 6.11 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PMOS Input Stage
      2. 7.3.2 CMOS Output Stage
      3. 7.3.3 Shutdown
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Community Resource
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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1 Features

  • 1.8-V and 5-V Performance
  • Low Offset (A Grade)
    • 1.25 mV Maximum (25°C)
    • 1.7 mV Maximum (–40°C to 125°C)
  • Rail-to-Rail Output Swing
  • Wide Common-Mode Input Voltage Range: –0.2 V to (V+ – 0.5 V)
  • Input Bias Current: 1 pA (Typical)
  • Input Offset Voltage: 0.3 mV (Typical)
  • Low Supply Current: 70 μA/Channel
  • Low Shutdown Current:
    10 pA (Typical) Per Channel
  • Gain Bandwidth: 2.3 MHz (Typical)
  • Slew Rate: 0.9 V/μs (Typical)
  • Turnon Time From Shutdown: 5 μs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)

2 Applications

  • Cellular Phones
  • Consumer Electronics (Laptops)
  • Audio Preamplifier for Voice
  • Portable and Battery-Powered Electronic Equipment
  • Supply Current Monitoring
  • Battery Monitoring
  • Buffers
  • Filters

3 Description

The TLV34xx devices are single and dual CMOS operational amplifiers, respectively, with low-voltage, low-power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of
0.3 mV (typical). For applications requiring excellent dc precision, the A grade (TLV34xA) has a low offset voltage of 1.25 mV (maximum) at 25°C.

These single-supply amplifiers are designed specifically for ultra-low-voltage (1.5 V to 5 V) operation, with a common-mode input voltage range that typically extends from –0.2 V to 0.5 V from the positive supply rail.

The TLV341 (single) and TLV342 (dual) in the RUG package also offer a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 45 pA (typical). Offered in both the SOT-23 and smaller SC70 packages, the TLV341 is suitable for the most space-constrained applications. The dual TLV342 is offered in the standard SOIC, VSSOP, and X2QFN packages.

An extended industrial temperature range from –40°C to 125°C makes the TLV34xx suitable in a wide variety of commercial and industrial applications.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TLV341 SOT-23 (6) 2.90 mm × 1.60 mm
SC70 (6) 2.00 mm × 1.25 mm
SOT (6) 1.60 mm × 1.20 mm
TLV342 SOIC (8) 4.90 mm × 3.91 mm
VSSOP (8) 3.00 mm × 3.00 mm
X2QFN (10) 1.50 mm × 2.00 mm
TLV342S X2QFN (10) 1.50 mm × 2.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Sample and Hold Circuit Using Two TLV341

TLV341 TLV341A TLV342 TLV342S logic_symbol_lvs568.gif