ZHCSEH3B December   2015  – September 2018 TAS5411-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化框图
      2.      效率
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements for I2C Interface Signals
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Analog Audio Input and Preamplifier
      2. 9.3.2 Pulse-Width Modulator (PWM)
      3. 9.3.3 Gate Drive
      4. 9.3.4 Power FETs
      5. 9.3.5 Load Diagnostics
        1. 9.3.5.1 Load Diagnostics Sequence
        2. 9.3.5.2 Faults During Load Diagnostics
      6. 9.3.6 Protection and Monitoring
      7. 9.3.7 I2C Serial Communication Bus
        1. 9.3.7.1 I2C Bus Protocol
        2. 9.3.7.2 Random Write
        3. 9.3.7.3 Random Read
        4. 9.3.7.4 Sequential Read
    4. 9.4 Device Functional Modes
      1. 9.4.1 Hardware Control Pins
      2. 9.4.2 EMI Considerations
      3. 9.4.3 Operating Modes and Faults
    5. 9.5 Register Maps
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Amplifier Output Filtering
        2. 10.2.1.2 Amplifier Output Snubbers
        3. 10.2.1.3 Bootstrap Capacitors
        4. 10.2.1.4 Analog Audio Input Filter
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Unused Pin Connections
          1. 10.2.2.1.1 MUTE Pin
          2. 10.2.2.1.2 STANDBY Pin
          3. 10.2.2.1.3 I2C Pins (SDA and SCL)
          4. 10.2.2.1.4 Terminating Unused Outputs
          5. 10.2.2.1.5 Using a Single-Ended Audio Input
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
      1. 12.2.1 Top Layer
      2. 12.2.2 Second Layer – Signal Layer
      3. 12.2.3 Third Layer – Power Layer
      4. 12.2.4 Bottom Layer – Ground Layer
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方产品免责声明
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 Power Supply Recommendations

A car battery that can have a large voltage range most commonly provides power for the device. PVDD, a filtered battery voltage, is the supply for the output FETs and the low-side FET gate driver. Good power-supply decoupling is necessary, especially at low voltage and temperature levels. To meet the PVDD specifications in the Electrical Characteristics section, TI uses 10-µF and 0.1-µF ceramic capacitors near the PVDD pin along with a larger bulk 330-µF electrolytic decoupling capacitor.

An internal linear regulator, which powers the analog circuitry, provides the voltage on the BYP pin. This supply requires an external bypass ceramic capacitor at the BYP pin.