ZHCSEH3B December   2015  – September 2018 TAS5411-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      简化框图
      2.      效率
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements for I2C Interface Signals
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Analog Audio Input and Preamplifier
      2. 9.3.2 Pulse-Width Modulator (PWM)
      3. 9.3.3 Gate Drive
      4. 9.3.4 Power FETs
      5. 9.3.5 Load Diagnostics
        1. 9.3.5.1 Load Diagnostics Sequence
        2. 9.3.5.2 Faults During Load Diagnostics
      6. 9.3.6 Protection and Monitoring
      7. 9.3.7 I2C Serial Communication Bus
        1. 9.3.7.1 I2C Bus Protocol
        2. 9.3.7.2 Random Write
        3. 9.3.7.3 Random Read
        4. 9.3.7.4 Sequential Read
    4. 9.4 Device Functional Modes
      1. 9.4.1 Hardware Control Pins
      2. 9.4.2 EMI Considerations
      3. 9.4.3 Operating Modes and Faults
    5. 9.5 Register Maps
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Amplifier Output Filtering
        2. 10.2.1.2 Amplifier Output Snubbers
        3. 10.2.1.3 Bootstrap Capacitors
        4. 10.2.1.4 Analog Audio Input Filter
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Unused Pin Connections
          1. 10.2.2.1.1 MUTE Pin
          2. 10.2.2.1.2 STANDBY Pin
          3. 10.2.2.1.3 I2C Pins (SDA and SCL)
          4. 10.2.2.1.4 Terminating Unused Outputs
          5. 10.2.2.1.5 Using a Single-Ended Audio Input
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Examples
      1. 12.2.1 Top Layer
      2. 12.2.2 Second Layer – Signal Layer
      3. 12.2.3 Third Layer – Power Layer
      4. 12.2.4 Bottom Layer – Ground Layer
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 第三方产品免责声明
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.7.3 Random Read

As shown in Figure 15, a single-byte data-read transfer begins with the master device transmitting a start condition followed by the I2C device address and the read/write bit. For the data-read transfer, the master device performs both a write and a following read. Initially, the master device performs a write to transfer the address byte of the internal memory address to be read. As a result, the read/write bit is a 0. After receiving the address and the read/write bit, the device responds with an acknowledge bit. In addition, after sending the internal memory address byte, the master device transmits another start condition followed by the device address and the read/write bit again. This time, the read/write bit is a 1, indicating a read transfer. After receiving the address and the read/write bit, the device again responds with an acknowledge bit. Next, the device transmits the data byte from the memory address being read. After receiving the data byte, the master device transmits a not-acknowledge followed by a stop condition to complete the single-byte data-read transfer.

TAS5411-Q1 T0036-06_SLOS814.gifFigure 15. Random Read Transfer