ZHCSDG9 数据表 | 德州仪器 TI.com.cn

ZHCSDG9 March 2015 CSD22204W

PRODUCTION DATA.

5 Specifications

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = –250 μA	–8			V
BV_GSS	Gate-to-Source Voltage	V_DS = 0 V, I_G = –5 μA	–6			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –6.4 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–4	μA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = –250 μA	–0.45	–0.7	–0.95	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –2.5 V, I_DS = –2 A		11.5	14.0	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –4.5 V, I_DS = –2 A		8.2	9.9	mΩ
g_ƒs	Transconductance	V_DS = –0.8 V, I_DS = –2 A		18		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –4 V, ƒ = 1 MHz		870	1130	pF
C_OSS	Output Capacitance			445	580	pF
C_RSS	Reverse Transfer Capacitance			204	265	pF
R_G	Series Gate Resistance			300		Ω
Q_g	Gate Charge Total (–4.5 V)	V_DS = –4 V, I_D = –2 A		18.9	24.6	nC
Q_gd	Gate Charge - Gate-to-Drain			4.2		nC
Q_gs	Gate Charge - Gate-to-Source			3.2		nC
Q_g(th)	Gate Charge at Vth			0.7		nC
Q_OSS	Output Charge	V_DS = –4 V, V_GS = 0 V		3.1		nC
t_d(on)	Turn On Delay Time	V_DS = –4 V, V_GS = –4.5 V, I_DS = –2 A, R_G = 0 Ω		58		ns
t_r	Rise Time			600		ns
t_d(off)	Turn Off Delay Time			3450		ns
t_ƒ	Fall Time			2290		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = –2 A, V_GS = 0 V		–0.7	–1.0	V

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		TYPCIAL VALUES			UNIT
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾		75		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾		230		°C/W

(1) Device mounted on FR4 material with 1 inch² (6.45 cm²), 2 oz. (0.071 mm thick) Cu.

(2) Device mounted on FR4 material with minimum Cu mounting area.

Typ R_θJA = 75°C/W when mounted on 1inch² of 2 oz. Cu.

Typ R_θJA = 230°C/W when mounted on minimum pad area of
2 oz. Cu.

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

I_D = –2 A		V_DS = –4 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

	I_D = –2 A

Figure 8. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJA = 75°C/W

Figure 10. Maximum Safe Operating Area

	V_DS = –4 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 9. Typical Diode Forward Voltage

Figure 11. Maximum Drain Current vs Temperature