ZHCSES4 March   2016 CSD19506KTT

PRODUCTION DATA.  

  1. 1特性
  2. 2应用
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 社区资源
    2. 6.2 商标
    3. 6.3 静电放电警告
    4. 6.4 Glossary
  7. 7机械、封装和可订购信息
    1. 7.1 KTT 封装尺寸
    2. 7.2 推荐的 PCB 布局
    3. 7.3 建议模板开口(模板厚度为 0.125mm)

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 器件和文档支持

6.1 社区资源

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

6.2 商标

NexFET, E2E are trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

6.3 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损伤。

6.4 Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.