ZHCSEB0D September   2015  – July 2018 CC1310

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能框图
  2. 2修订历史记录
  3. 3Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram – RSM Package
    2. 4.2 Signal Descriptions – RSM Package
    3. 4.3 Pin Diagram – RHB Package
    4. 4.4 Signal Descriptions – RHB Package
    5. 4.5 Pin Diagram – RGZ Package
    6. 4.6 Signal Descriptions – RGZ Package
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
    5. 5.5  RF Characteristics
    6. 5.6  Receive (RX) Parameters, 861 MHz to 1054 MHz
    7. 5.7  Receive (RX) Parameters, 431 MHz to 527 MHz
    8. 5.8  Transmit (TX) Parameters, 861 MHz to 1054 MHz
    9. 5.9  Transmit (TX) Parameters, 431 MHz to 527 MHz
    10. 5.10 PLL Parameters
    11. 5.11 ADC Characteristics
    12. 5.12 Temperature Sensor
    13. 5.13 Battery Monitor
    14. 5.14 Continuous Time Comparator
    15. 5.15 Low-Power Clocked Comparator
    16. 5.16 Programmable Current Source
    17. 5.17 DC Characteristics
    18. 5.18 Thermal Characteristics
    19. 5.19 Timing and Switching Characteristics
      1. 5.19.1 Reset Timing
        1. Table 5-1 Reset Timing
      2. 5.19.2 Wakeup Timing
        1. Table 5-2 Wakeup Timing
      3. 5.19.3 Clock Specifications
        1. Table 5-3 24-MHz Crystal Oscillator (XOSC_HF)
        2. Table 5-4 32.768-kHz Crystal Oscillator (XOSC_LF)
        3. Table 5-5 48-MHz RC Oscillator (RCOSC_HF)
        4. Table 5-6 32-kHz RC Oscillator (RCOSC_LF)
      4. 5.19.4 Flash Memory Characteristics
        1. Table 5-7 Flash Memory Characteristics
      5. 5.19.5 Synchronous Serial Interface (SSI) Characteristics
        1. Table 5-8 Synchronous Serial Interface (SSI) Characteristics
    20. 5.20 Typical Characteristics
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Main CPU
    3. 6.3  RF Core
    4. 6.4  Sensor Controller
    5. 6.5  Memory
    6. 6.6  Debug
    7. 6.7  Power Management
    8. 6.8  Clock Systems
    9. 6.9  General Peripherals and Modules
    10. 6.10 Voltage Supply Domains
    11. 6.11 System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 TI Design or Reference Design
  8. 8器件和文档支持
    1. 8.1  器件命名规则
    2. 8.2  工具和软件
    3. 8.3  文档支持
    4. 8.4  德州仪器 (TI) 低功耗射频网站
    5. 8.5  其他信息
    6. 8.6  社区资源
    7. 8.7  商标
    8. 8.8  静电放电警告
    9. 8.9  出口管制提示
    10. 8.10 术语表
  9. 9机械、封装和可订购信息
    1. 9.1 封装信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

2 修订历史记录

Changes from October 27, 2016 to July 13, 2018 (from C Revision () to D Revision)

Changes from October 28, 2015 to October 27, 2016 (from B Revision () to C Revision)

  • Added 32KB 和 64KB 至系统内可编程闪存的特性要点Go
  • Changed 至正确引脚数（位于特性要点 与 RoHS 兼容的封装Go
  • Changed CC1310 框图Go
  • Changed Figure 4-2, corrected typo in pin nameGo
  • Changed the table note in Section 5.1 from: VDDS to: groundGo
  • Changed ESD ratings for all pins in Section 5.2Go
  • Added OOK modulation power consumption to Section 5.4Go
  • Added OOK modulation sensitivity to Section 5.6Go
  • Added receive parameters for 431-MHz to 527-MHz band in Section 5.7Go
  • Added transmit parameters for 431-MHz to 527-MHz band in Section 5.9Go
  • Changed ADC reference voltage to correct value in Section 5.11Go
  • Added thermal characteristics for RHB and RSM packages in Section 5.18Go
  • Changed Standby MCU Current Consumption, 32-kHz Clock, RAM and MCU Retention by extending the temperatureGo
  • Changed BOD restriction footnote in Table 6-2—restriction does not apply to die revision B and laterGo
  • Added Section 6.10Go
  • Changed Figure 8-1Go

Changes from September 30, 2015 to October 28, 2015 (from A Revision () to B Revision)

  • Added the RSM and RHB packagesGo

Changes from August 31, 2015 to September 30, 2015 (from * Revision () to A Revision)

  • Changed 器件状态，从“产品预览”更改为“量产数据”Go
  • Removed the RSM and RHB packagesGo