ZHCSGB2 June   2017

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Supply Current
    6. 6.6  Power Supply Control
    7. 6.7  Low-Voltage General Purpose I/O, TS1
    8. 6.8  Power-On Reset (POR)
    9. 6.9  Internal 1.8-V LDO
    10. 6.10 Current Wake Comparator
    11. 6.11 Coulomb Counter
    12. 6.12 ADC Digital Filter
    13. 6.13 ADC Multiplexer
    14. 6.14 Internal Temperature Sensor
    15. 6.15 NTC Thermistor Measurement Support
    16. 6.16 High-Frequency Oscillator
    17. 6.17 Low-Frequency Oscillator
    18. 6.18 Voltage Reference 1
    19. 6.19 Voltage Reference 2
    20. 6.20 Instruction Flash
    21. 6.21 Data Flash
    22. 6.22 Current Protection Thresholds
    23. 6.23 Current Protection Timing
    24. 6.24 N-CH FET Drive (CHG, DSG)
    25. 6.25 I2C Interface I/O
    26. 6.26 I2C Interface Timing
    27. 6.27 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Battery Parameter Measurements
        1. 7.3.1.1 bq27750 Processor
      2. 7.3.2  Coulomb Counter (CC)
      3. 7.3.3  CC Digital Filter
      4. 7.3.4  ADC Multiplexer
      5. 7.3.5  Analog-to-Digital Converter (ADC)
      6. 7.3.6  ADC Digital Filter
      7. 7.3.7  Internal Temperature Sensor
      8. 7.3.8  External Temperature Sensor Support
      9. 7.3.9  Power Supply Control
      10. 7.3.10 Power-On Reset
      11. 7.3.11 Bus Communication Interface
      12. 7.3.12 N-Channel Protection FET Drive
      13. 7.3.13 Low Frequency Oscillator
      14. 7.3.14 High Frequency Oscillator
      15. 7.3.15 1.8-V Low Dropout Regulator
      16. 7.3.16 Internal Voltage References
      17. 7.3.17 Overcurrent in Discharge Protection
      18. 7.3.18 Short-Circuit Current in Charge Protection
      19. 7.3.19 Short-Circuit Current in Discharge 1 and 2 Protection
      20. 7.3.20 Primary Protection Features
      21. 7.3.21 Gas Gauging
      22. 7.3.22 Charge Control Features
      23. 7.3.23 Authentication
    4. 7.4 Device Functional Modes
      1. 7.4.1 Lifetime Logging Features
      2. 7.4.2 Configuration
        1. 7.4.2.1 Coulomb Counting
        2. 7.4.2.2 Cell Voltage Measurements
        3. 7.4.2.3 Current Measurements
        4. 7.4.2.4 Auto Calibration
        5. 7.4.2.5 Temperature Measurements
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements (Default)
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting Design Parameters
      3. 8.2.3 Calibration Process
      4. 8.2.4 Gauging Data Updates
        1. 8.2.4.1 Application Curve
  9. Power Supply Requirements
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
订购信息

器件和文档支持

文档支持

  • 《bq27750 技术参考手册》(SLUUBI6)
  • 《Impedance Track 电池电量监测算法的理论及实现应用报告》(SLUA364)

商标

Impedance Track is a trademark of Texas Instruments.

I2C is a trademark of NXP Semiconductors.

静电放电警告

esds-image

ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可能会损坏集成电路。

ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可能会导致器件与其发布的规格不相符。

Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.