SNAS411P August   2008  – April 2017 ADC128S102QML-SP


  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: ADC128S102QML-SP Converter
    6. 6.6 Electrical Characteristics: Radiation
    7. 6.7 Electrical Characteristics: Burn in Delta Parameters - TA at 25°C
    8. 6.8 Timing Requirements
    9. 6.9 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ADC128S102 Transfer Function
      2. 7.3.2 Analog Inputs
      3. 7.3.3 Digital Inputs and Outputs
      4. 7.3.4 Radiation Environments
        1. Total Ionizing Dose
        2. Single Event Latch-Up and Functional Interrupt
        3. Single Event Upset
    4. 7.4 Device Functional Modes
      1. 7.4.1 ADC128S102 Operation
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
    1. 9.1 Power Supply Sequence
    2. 9.2 Power Management
    3. 9.3 Power Supply Noise Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
      2. 11.1.2 Device Nomenclature
        1. Specification Definitions
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Engineering Samples


请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • NAC|16
  • Y|0
  • NAD|16

Device and Documentation Support

Device Support

Development Support

For related documentation, see the following:

Device Nomenclature

Specification Definitions

    ACQUISITION TIME is the time required for the ADC to acquire the input voltage. During this time, the hold capacitor is charged by the input voltage.
    APERTURE DELAY is the time between the fourth falling edge of SCLK and the time when the input signal is internally acquired or held for conversion.
    CHANNEL-TO-CHANNEL ISOLATION is resistance to coupling of energy from one channel into another channel.
    CONVERSION TIME is the time required, after the input voltage is acquired, for the ADC to convert the input voltage to a digital word.
    CROSSTALK is the coupling of energy from one channel into another channel. This is similar to Channel-to-Channel Isolation, except for the sign of the data.
    DIFFERENTIAL NON-LINEARITY (DNL) is the measure of the maximum deviation from the ideal step size of 1 LSB.
    DUTY CYCLE is the ratio of the time that a repetitive digital waveform is high to the total time of one period. The specification here refers to the SCLK.
    EFFECTIVE NUMBER OF BITS (ENOB, or EFFECTIVE BITS) is another method of specifying Signal-to-Noise and Distortion or SINAD. ENOB is defined as (SINAD - 1.76) / 6.02 and says that the converter is equivalent to a perfect ADC of this (ENOB) number of bits.
    FULL POWER BANDWIDTH is a measure of the frequency at which the reconstructed output fundamental drops 3 dB below its low frequency value for a full scale input.
    GAIN ERRORis the deviation of the last code transition (111...110) to (111...111) from the ideal (VREF - 1.5 LSB), after adjusting for offset error.
    INTEGRAL NON-LINEARITY (INL) is a measure of the deviation of each individual code from a line drawn from negative full scale (½ LSB below the first code transition) through positive full scale (½ LSB above the last code transition). The deviation of any given code from this straight line is measured from the center of that code value.
    INTERMODULATION DISTORTION (IMD) is the creation of additional spectral components as a result of two sinusoidal frequencies being applied to an individual ADC input at the same time. It is defined as the ratio of the power in either the second or the third order intermodulation products to the sum of the power in both of the original frequencies. Second order products are fa ± fb, where fa and fb are the two sine wave input frequencies. Third order products are (2fa ± fb ) and (fa ± 2fb). IMD is usually expressed in dB.
    MISSING CODES are those output codes that will never appear at the ADC outputs. The ADC128S102 is verified not to have any missing codes.
    OFFSET ERRORis the deviation of the first code transition (000...000) to (000...001) from the ideal (that is, GND + 0.5 LSB).
    SIGNAL TO NOISE RATIO (SNR) is the ratio, expressed in dB, of the rms value of the input signal to the rms value of the sum of all other spectral components below one-half the sampling frequency, not including harmonics or d.c.
    SIGNAL TO NOISE PLUS DISTORTION (S/N+D or SINAD) Is the ratio, expressed in dB, of the rms value of the input signal to the rms value of all of the other spectral components below half the clock frequency, including harmonics but excluding d.c.
    SPURIOUS FREE DYNAMIC RANGE (SFDR) is the difference, expressed in dB, between the desired signal amplitude to the amplitude of the peak spurious spectral component, where a spurious spectral component is any signal present in the output spectrum that is not present at the input and may or may not be a harmonic.
    THROUGHPUT TIME is the minimum time required between the start of two successive conversions. It is the acquisition time plus the conversion time.
    TOTAL HARMONIC DISTORTION (THD) is the ratio, expressed in dBc, of the rms total of the first five harmonic components at the output to the rms level of the input signal frequency as seen at the output. THD is calculated as:
    Equation 2. ADC128S102QML-SP 30018198.gif


    • Af1 is the RMS power of the input frequency at the output
    • Af2 through Af10 are the RMS power in the first 9 harmonic frequencies

Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.


MICROWIRE, E2E are trademarks of Texas Instruments.

SPI, QSPI are trademarks of Motorola, Inc..

All other trademarks are the property of their respective owners.

Electrostatic Discharge Caution


These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.


SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.